公开(公告)号：WO2007085982A3

公开(公告)日：2007-10-18

申请号：PCT/IB2007050153

申请日：2007-01-17

Applicant: PHILIPS INTELLECTUAL PROPERTY ,  KONINKL PHILIPS ELECTRONICS NV ,  WEICHMANN ULRICH ,  HEUSLER GERO

Inventor： WEICHMANN ULRICH ,  HEUSLER GERO

IPC: H01S3/109 ,  H01S3/16

CPC classification number: H01S3/094003 ,  H01S3/094092 ,  H01S3/1603 ,  H01S3/1608 ,  H01S3/1615 ,  H01S3/17 ,  H01S3/173

Abstract: The invention relates to a co-doped upconversion laser system comprising a host-material, whereas the host material is made of at least one crystal material and/ or of a glass material, which features a low phonon energy, whereas said host material comprises a dopant made of Erbium (Er 3+) , which is pumped by laser light with a single wavelength in the infrared wavelength range, whereas said host material furthermore comprises at least one co-dopant made of Terbium (Tb 3+ ) or Samarium (Sm 3+ ), in order to emit laser radiation in the range of at least one visible wavelength. This system provides a co-doped upconversion laser system featuring an elimination of coulour centres, a reduced re-absorption of the laser radiation and the emission of laser light in the range of visible wavelengths.

Abstract translation: 本发明涉及一种包含主体材料的共掺上转换激光系统，而主体材料由至少一种具有低声子能量的晶体材料和/或玻璃材料制成，而所述主体材料包括 铒（Er 3+）制成的掺杂剂，其被红外波长范围内的单一波长的激光泵浦，而所述主体材料还包括至少一种由铽（Tb 3 + +）或钐（Sm 3+），以便在至少一个可见波长的范围内发射激光辐射。 该系统提供了一种共掺上转换激光系统，其具有消除库仑中心，减少激光辐射的再吸收和在可见波长范围内发射激光。

公开(公告)号：WO2005022708A8

公开(公告)日：2007-02-15

申请号：PCT/IB2004051516

申请日：2004-08-20

Applicant: PHILIPS INTELLECTUAL PROPERTY ,  KONINKL PHILIPS ELECTRONICS NV ,  MOENCH HOLGER ,  HEUSLER GERO

Inventor： MOENCH HOLGER ,  HEUSLER GERO

IPC: H01S3/063 ,  H01S3/094 ,  H01S3/0941 ,  H01S3/16 ,  H01S3/23 ,  H01S5/02 ,  H01S5/40 ,  H04N9/31

CPC classification number: H04N9/3129 ,  H01S3/0632 ,  H01S3/0637 ,  H01S3/094092 ,  H01S3/09415 ,  H01S3/1608 ,  H01S3/2391 ,  H01S5/02248 ,  H01S5/02272 ,  H01S5/4031 ,  H04N9/315

Abstract: The invention relates to a semiconductor diode laser used to pump a waveguide and their use as light source. A waveguide laser (15) according to the present invention producing visible wavelength radiation from IR wavelength radiation com­prising: a) at least one semiconductor diode laser or diode laser bar (8) producing IR wave­length radiation; b) at least one upconversion layer (13a, 13b, 13c) having a thickness of at least 1 µm thicker than the thickness of the emitting layer in the semiconductor diode laser that converts the IR wavelength radiation into visible wavelengths by an upconversion process of photon absorption energy transfer followed by emission; c) at least one opti­cal resonator which recirculates the visible wavelength radiation and/or at least one optical resonator which recirculates the IR wavelength radiation; whereby - the laser diode or laser diode bar and the upconversion layer(s) are arranged on the same sub­strate or each on a separate substrate (12, 14); - the laser diode or laser diode bar and the up­conversion layer(s) are adjacent arranged, whereby a gap between the adjacent arranged diode laser bar and the upconversion layer(s) is formed; or - the laser diode or laser diode bar and the upconversion layer(s) are contacting arranged in this order; and whereby the waveguide laser has a beam quality M2 of = 2 and = 1000.

Abstract translation: 本发明涉及一种用于泵浦波导的半导体二极管激光器及其作为光源的用途。 根据本发明的波导激光器（15）产生来自IR波长辐射的可见波长辐射，包括：a）至少一个产生IR波长辐射的半导体二极管激光器或二极管激光棒（8）; b）至少一个上转换层（13a，13b，13c），其厚度比半导体二极管激光器中的发光层的厚度厚至少1μm，其通过光子上转换过程将IR波长辐射转换成可见光波长 吸收能量转移后排放; c）至少一个使可见波长辐射再循环的光学谐振器和/或使IR波长辐射再循环的至少一个光学谐振器; 由此 - 激光二极管或激光二极管棒和上转换层被布置在相同的衬底上或者每个在单独的衬底（12,14）上; - 激光二极管或激光二极管棒和上变频层相邻布置，由此形成相邻布置的二极管激光棒与上转换层之间的间隙; 或 - 激光二极管或激光二极管条和上转换层以这种顺序接触; 并且由此波导激光器具有= 2和= 1000的光束质量M2。

公开(公告)号：WO2005104183A3

公开(公告)日：2009-03-19

申请号：PCT/IB2005051124

申请日：2005-04-06

Applicant: PHILIPS INTELLECTUAL PROPERTY ,  KONINKL PHILIPS ELECTRONICS NV ,  PEKARSKI PAVEL ,  HEUSLER GERO ,  MOENCH HOLGER ,  POLLMANN-RETSCH JENS

Inventor： PEKARSKI PAVEL ,  HEUSLER GERO ,  MOENCH HOLGER ,  POLLMANN-RETSCH JENS

IPC: H01J61/52 ,  H01J61/00 ,  H01J61/86

CPC classification number: H01J61/523 ,  H01J61/54 ,  H01J61/86

Abstract: The invention relates to a lighting unit comprising at least a high-pressure gas discharge lamp, which comprises at least a lamp bulb (1) with a discharge space (21) in which two electrodes (41, 42) are arranged and in which a gas mixture with ingredients capable of condensation is present, wherein a risk of condensation deposit between and/or on the two electrodes (41, 42) exists, and which comprises an ignition device and a unit for local heating (5) of the lamp bulb (1), characterized in that the lighting unit comprises at least one unit for local cooling (6) of the lamp bulb (1).

Abstract translation: 本发明涉及一种照明装置，其至少包括高压气体放电灯，其至少包括具有放电空间（21）的灯泡（1），其中布置有两个电极（41,42），其中 存在具有能够冷凝的成分的气体混合物，其中存在两个电极（41,42）之间和/或之间的冷凝沉积的风险，其包括点火装置和用于局部加热（5）的灯泡的单元 （1），其特征在于，所述照明单元包括用于所述灯泡（1）的局部冷却（6）的至少一个单元。

公开(公告)号：WO2007125452A3

公开(公告)日：2008-11-06

申请号：PCT/IB2007051367

申请日：2007-04-17

Applicant: PHILIPS INTELLECTUAL PROPERTY ,  KONINKL PHILIPS ELECTRONICS NV ,  WEICHMANN ULRICH ,  HEUSLER GERO ,  MOENCH HOLGER

Inventor： WEICHMANN ULRICH ,  HEUSLER GERO ,  MOENCH HOLGER

IPC: H01S5/06 ,  H01S5/14 ,  H01S5/183 ,  H04N9/31

CPC classification number: H01S5/14 ,  H01S3/109 ,  H01S5/026 ,  H01S5/1039 ,  H01S5/183 ,  H01S5/18388

Abstract: The present invention relates to an upconversion laser system comprising at least a semiconductor laser having a gain structure (4) arranged between a first mirror (5) and a second mirror (6), said first (5) and said second mirror (6) forming a laser cavity (7) of the semiconductor laser, and an upconversion laser for upconverting a fundamental radiation of said semiconductor laser. The upconversion laser system of the present invention is characterized in that the upconversion laser is arranged in the laser cavity (7) of the semiconductor laser. The proposed upconversion laser system has a compact design.

Abstract translation: 本发明涉及一种上转换激光系统，包括至少一个具有布置在第一反射镜（5）和第二反射镜（6）之间的增益结构（4）的半导体激光器，所述第一反射镜（5）和所述第二反射镜（6） 形成半导体激光器的激光腔（7）和用于上变频所述半导体激光器的基本辐射的上变频激光器。 本发明的上变频激光系统的特征在于，上转换激光器配置在半导体激光器的激光腔（7）中。 所提出的上变频激光系统具有紧凑的设计。

公开(公告)号：WO2006072849A3

公开(公告)日：2006-09-08

申请号：PCT/IB2005054302

申请日：2005-12-19

Applicant: PHILIPS INTELLECTUAL PROPERTY ,  KONINKL PHILIPS ELECTRONICS NV ,  MOENCH HOLGER ,  HEUSLER GERO

Inventor： MOENCH HOLGER ,  HEUSLER GERO

IPC: G02F1/35 ,  H01L33/50

CPC classification number: C09K11/7772 ,  C03C14/006 ,  C03C17/3411 ,  C03C2214/16 ,  C09K11/7773 ,  F21K9/64 ,  H01L33/502 ,  H01S5/06

Abstract: The present invention is directed to a wavelength conversion layer (1) with a matrix layer (2) comprising embedded rare-earth-ion-doped micro-crystallites (3) and/or rare-earth-ion-doped amorphous particles, wherein said rare-earth-ion-doped micro crystallites and/or rare-earth-ion-doped amorphous particles are doped with at least one of the lanthanides, and wherein said rare-earth-ion-doped micro-crystallites and/or said doped amorphous particles have a mean diameter d 50 of 10 nm to 500 müm, and wherein the matrix layer ,is transparent, whereby the refractive indices of said rare-earth-ion-doped micro-crystallites and/or said rare-earth-ion-doped amorphous particles match the refractive indices of the matrix layer with an index fifference delta n such as: 0

Abstract translation: 本发明涉及一种具有基质层（2）的波长转换层（1），该基质层包括掺杂的稀土离子掺杂微晶（3）和/或稀土离子掺杂的无定形颗粒，其中所述 稀土离子掺杂的微晶和/或稀土离子掺杂的无定形颗粒掺杂有至少一种镧系元素，并且其中所述稀土离子掺杂的微晶和/或所述掺杂的非晶体 颗粒具有10nm至500μm的平均直径d 50 N，并且其中所述基质层是透明的，由此所述稀土离子掺杂微晶的折射率和/或所述 对于400nm至1200nm范围内的至少一个波长，稀土离子掺杂的无定形颗粒与矩阵层的折射率与索引倍数Δn匹配，例如：0 <Δn<0.1。