Abstract:
An apparatus and a method is described, by which a component carrier configuration, re-configuration, activation or deactivation is performed. In particular, a signaling format used for acknowledgment/negative acknowledgement messages on an uplink control channel is detected, and a codebook size of the acknowledgment/negative acknowledgement messages is decided based on the detected signaling format.
Abstract:
Thermoelectric elements having a non-uniform effective thermal conductivity include opposing contact surfaces for making electrical and thermal contact with respective hot side and cold side electrical interconnects. The contact surfaces having corresponding contact areas that are each greater than an intermediate cross-sectional area of the thermoelectric elements.
Abstract:
The present invention provides a phase shifter with reversely configured electric regulation units. The phase shifter has a chamber with a holding space, a first feeder unit and a second feeder unit at the sides of the holding space, and at least one reversely configured electric regulation unit. The regulation unit contains a first coupling set with a movable and a fixed coupling, and a second coupling set with a movable and a fixed coupling. A sync linkage mechanism is used to link the respective movable couplings. A push-pull unit is linked to a driven connection of the sync linkage mechanism. A cover plate seals the holding space. The phase shifter configuration makes it possible to reduce markedly the volume and space of the phase shifter, cut down the manufacturing cost and improve the mating accuracy with higher applicability.
Abstract:
The invention relates to a method of modifying electrical properties of carbon nanotubes by subjecting a composition of carbon nanotubes to one or more radical initiator(s). The invention also relates to an electronic component such as field-effect transistor comprising a carbon nanotube obtained using the method of the invention. The invention also relates to the use of the modified carbon nanotubes in conductive and high-strength nanotube/polymer composites, transparent electrodes, sensors and nanoelectromechanical devices, additives for batteries, radiation sources, semiconductor devices (e.g. transistors) or interconnects.
Abstract:
Methods for preparing improved Panax Notoginseng saponin fraction from a Sanchi extract and its use in pharmaceutical compositions for treating or preventing a blood circulation disorder.
Abstract:
A solar cell includes a semi-conductive substrate, a doping layer, an anti-reflection layer, an electrode, a passivation stacked layer and a contact layer. The semi-conductive substrate has a front and a back surface. The doping layer is disposed on the front surface. The anti-reflection layer is disposed on the doping layer. The electrode is disposed on the anti-reflection layer and electrically connected to the doping layer. The passivation stacked layer is disposed on the back surface and has a first dielectric layer, a second dielectric layer and a middle dielectric layer sandwiched between the first and the second dielectric layer. The dielectric constant of the middle dielectric layer is substantially lower than the dielectric constant of the first dielectric layer and the dielectric constant of the second dielectric layer. The contact layer covers the passivation stacked layer and electrically contacts with the back surface of the semi-conductive substrate.
Abstract:
An audio test apparatus, and an exemplary audio test method that includes: processing an audio file through two independent channels; outputting no signals from a left channel and from a right channel in a first time period; receiving noise signals from the left and right channels; outputting single-frequency signals from the left channel only in a second time period; receiving the single-frequency signals from the left channel and crosstalk signals from the right channel; outputting multi-frequency signals from the left and right channels in a third time period; receiving the multi-frequency signals from the left and right channels; outputting single-frequency signals from the right channel only in a fourth time period; receiving the crosstalk signals from the left channel and the single-frequency signals from the right channel; and testing parameters according to the signals received during the four time periods.
Abstract:
In accordance with an example embodiment of the present invention, a method comprises allocating a control channel resource in a wireless relay transmission frame on a wireless relay link; generating a control signaling based on at least one of a resource allocation scheme, a status of the wireless relay link and a traffic condition of the wireless relay link; mapping the control signaling to the allocated control channel resource via at least one of a time-first mapping, a frequency-first mapping, and a multiplexing mapping; and transmitting the control signaling in the allocated control channel resource on the wireless relay link to at least one associated relay node.
Abstract:
The embodiment of the present disclosure discloses a method and apparatus for detecting frequency deviation of a clock. The method includes: counting the clock to be detected to acquire current counting information; filtering the current counting information to acquire filtered data; and acquiring the frequency deviation of the clock to be detected from the filtered data. According to the embodiments of the present disclosure, the detection accuracy of frequency deviation is improved by filtering the counting information acquired by counting the clock to be detected, and appropriately increasing an amount of information after the filtering, so as to perceive the occurrence of any abnormal dithering, and avoid neglecting of any abnormal condition in periodic or aperiodic queries.
Abstract:
A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconductor, and a second electrode formed on at least a portion of the n-type semiconductor layer. Each quantum well structure includes an InxGa1-xN quantum well layer, an InyGa1-yN barrier layer (x>0.3 or x=0.3), and InzGa1-zN quantum dots, where x
Abstract translation:白色发光二极管包括n型半导体层,在n型半导体层上形成的一个或多个量子阱结构,形成在量子阱结构上的p型半导体层,形成在p型半导体层上的第一电极, 和形成在n型半导体层的至少一部分上的第二电极。 每个量子阱结构包括In x Ga 1-x N量子阱层,In y Ga 1-y N势垒层(x> 0.3或x = 0.3)和In x Ga 1-z N量子点,其中x