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    PRODUCTION OF ELECTRONIC DEVICES
    11.
    发明申请
    PRODUCTION OF ELECTRONIC DEVICES 审中-公开
    电子设备的生产

    公开(公告)号：WO2005022664A2

    公开(公告)日：2005-03-10

    申请号：PCT/GB2004/003754

    申请日：2004-09-02

    Applicant: PLASTIC LOGIC LIMITED ,  CAIN, Paul ,  MENON, Anoop ,  SIRRINGHAUS, Henning ,  WATTS, James, D. ,  WERNE, Tim, Von ,  BROWN, Thomas, M.

    Inventor： CAIN, Paul ,  MENON, Anoop ,  SIRRINGHAUS, Henning ,  WATTS, James, D. ,  WERNE, Tim, Von ,  BROWN, Thomas, M.

    IPC: H01L51/40

    CPC classification number: B82Y10/00 ,  B82Y30/00 ,  H01L51/0004 ,  H01L51/0012 ,  H01L51/0021 ,  H01L51/0516 ,  H01L51/0541 ,  H01L51/0545

    Abstract: A method of producing a metal element of an electronic device on a substrate, including the steps of: forming a mixture of a material comprising metal atoms with a liquid, depositing the material from the liquid mixture onto a substrate, and then irradiating at least part of the deposited material with light to increase the electrical conductivity of the deposited material. A method of producing one or more elements of an electronic device, including the steps of : providing a substrate including one or more underlying elements of the electronic device and a thermally patternable layer overlying said one or more underlying elements; and using said one or more underlying elements to locally generate heat and thereby selectively induce a change in corresponding portions of said thermally pattemable layer; and wherein either the change selectively induced in said corresponding portions directly results in the definition of one or more elements of the electronic device in a position determined by that of said one or more underlying elements, or alternatively including the additional step of using the change selectively induced in said one or more corresponding portions to facilitate the formation of one or more elements of the electronic device in a position determined by that of said one or more underlying elements. A method of producing an element of an electronic device, including the steps of: (a) providing a substrate; (b) depositing on said substrate a layer of a switchable material, which changes its physical or chemical properties upon irradiation with light or heating causing a change of its surface energy properties; (c) irradiatively inducing at selected regions of a layer of switchable material a change in physical or chemical properties that alters the surface energy of said selected regions and thereby forming a surface energy pattern on its surface; and (d) without removing said layer of switchable material in either irradiated selected regions or non-irradiated regions from the substrate depositing over the surface energy pattern produced in step (c) a material for forming an element of the electronic device such that the surface energy pattern controls the deposition of said material.

    Abstract translation: 一种在基板上制造电子器件的金属元件的方法，包括以下步骤：将包含金属原子的材料与液体的混合物形成，将材料从液体混合物沉积到基底上，然后将至少部分 的沉积材料，以增加沉积材料的导电性。 一种制造电子设备的一个或多个元件的方法，包括以下步骤：提供包括电子设备的一个或多个下层元件的基板和覆盖所述一个或多个下层元件的可热图案化层; 并且使用所述一个或多个下层元件局部产生热量，从而选择性地诱导所述热可变层的相应部分的变化; 并且其中在所述相应部分中选择性地诱发的所述变化直接导致所述电子设备的一个或多个元件的定义在由所述一个或多个下层元件的位置确定的位置中，或者可选地包括选择性地使用所述变化的附加步骤 在所述一个或多个对应部分中感应以促​​进在由所述一个或多个下层元件的位置确定的位置中形成电子设备的一个或多个元件。 一种制造电子器件元件的方法，包括以下步骤：（a）提供衬底; （b）在所述基板上沉积一层可切换材料，其在用光或加热照射时改变其物理或化学性质，导致其表面能特性的变化; （c）在可切换材料层的选定区域辐射诱导改变所述选定区域的表面能，从而在其表面上形成表面能量图案的物理或化学性质的变化; 和（d）在从步骤（c）中产生的表面能量图案上沉积超过在步骤（c）中产生的表面能量图案的任何照射的选定区域或非照射区域中的所述可切换材料层不移除用于形成电子器件的元件的材料， 能量图案控制所述材料的沉积。

    ACTIVE LAYER ISLAND
    12.
    发明申请
    ACTIVE LAYER ISLAND 审中-公开
    活动层岛

    公开(公告)号：WO2004066477A2

    公开(公告)日：2004-08-05

    申请号：PCT/GB2004/000161

    申请日：2004-01-19

    Applicant: PLASTIC LOGIC LIMITED ,  SIRRINGHAUS, Henning ,  RAMSDALE, Catherine

    Inventor： SIRRINGHAUS, Henning ,  RAMSDALE, Catherine

    IPC: H02M

    CPC classification number: H01L21/00 ,  H01L51/0005 ,  H01L51/0022 ,  H01L51/0512 ,  H01L51/0541

    Abstract: A method for forming an electronic device including at least one electrically conductive and one semiconductive material deposited from solution, the method comprising: forming on the substrate a confinement structure consisting of a least a first zone and a second zone, depositing the electrically conductive material on the substrate, wherein the electrically conductive material is absent from both the first and second zone, and subsequently depositing the electrically semicondutive material from solution, wherein the semiconductive material is absent from the first zone, but not from the second zone.

    Abstract translation: 一种用于形成包括从溶液沉积的至少一种导电和一种半导体材料的电子器件的方法，所述方法包括：在所述衬底上形成由至少第一区和第二区组成的约束结构，将所述导电材料沉积在 所述衬底，其中所述导电材料不在所述第一和第二区域中，并且随后从所述溶液沉积所述电半液体材料，其中所述半导体材料不存在于所述第一区域中，而不是来自所述第二区域。

    ELECTRONIC DEVICES
    13.
    发明申请
    ELECTRONIC DEVICES 审中-公开
    电子设备

    公开(公告)号：WO2006061589A1

    公开(公告)日：2006-06-15

    申请号：PCT/GB2005/004665

    申请日：2005-12-06

    Applicant: PLASTIC LOGIC LIMITED ,  HAYTON, Carl ,  SIRRINGHAUS, Henning ,  VON WERNE, Timothy ,  NORVAL, Shane

    Inventor： HAYTON, Carl ,  SIRRINGHAUS, Henning ,  VON WERNE, Timothy ,  NORVAL, Shane

    IPC: H01L51/40 ,  H01L21/288

    CPC classification number: H01L51/0021 ,  H01L21/288 ,  H01L21/76802 ,  H01L21/76804 ,  H01L51/0017 ,  H01L51/0541

    Abstract: A method of producing an electronic device including the steps of: (i) providing a body including a first, conductive element separated from a first surface of said body by a portion of said body; (ii) removing a selected portion of said body to define a recess in said body extending from said first surface and via which a portion of said first element is exposed; and (iii) putting into said recess a liquid medium carrying a first material; wherein said first material is preferentially deposited on the exposed inner surface of said body defining said recess, and wherein the deposited first material is used to provide a connection between said first element and a second conductive element located within said body or later deposited over said first surface of said body.

    Abstract translation: 一种电子设备的制造方法，包括以下步骤：（i）提供主体，其包括通过所述主体的一部分与所述主体的第一表面分离的第一导电元件; （ii）去除所述主体的选定部分以限定在所述主体中从所述第一表面延伸的凹部，并且所述第一元件的一部分暴露在所述凹部中; 和（iii）将具有第一材料的液体介质放入所述凹部中; 其中所述第一材料优选沉积在限定所述凹部的所述主体的暴露的内表面上，并且其中所沉积的第一材料用于在所述第一元件和位于所述主体内的第二导电元件之间提供连接，或稍后沉积在所述第一元件上 身体的表面。

    TRANSISTOR-CONTROLLED DISPLAY DEVICES
    15.
    发明申请
    TRANSISTOR-CONTROLLED DISPLAY DEVICES 审中-公开
    晶体管控制显示器件

    公开(公告)号：WO2004070466A2

    公开(公告)日：2004-08-19

    申请号：PCT/GB2004/000433

    申请日：2004-02-04

    Applicant: PLASTIC LOGIC LIMITED ,  BURNS, Seamus ,  SIRRINGHAUS, Henning

    Inventor： BURNS, Seamus ,  SIRRINGHAUS, Henning

    IPC: G02F1/1343

    CPC classification number: H01L51/0516 ,  G02B5/201 ,  G02F1/136213 ,  G02F1/136227 ,  G09G3/3659 ,  G09G2300/043 ,  G09G2300/0876 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3248 ,  H01L27/326 ,  H01L27/3276 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0541

    Abstract: A device architecture for an active matrix display pixel comprising source addressing lines and TFT drain electrode formed on a first metal level of the device, the pixel electrode formed on a second, separate metal level, and the TFT gate electrodes and gate addressing lines on a third metal level separated from both the first level and the second level by at least one dielectric layer, wherein the pixel electrode on the second level is electrically connected to the drain electrode on the first level through a via-hole connection and a pixel capacitor is founed by overlap of part of the pixel electrode on the second level with a portion of the gate addressing line of a neighbouring line of pixels on the third level. The device is formed preferably using print based methods.

    Abstract translation: 一种用于有源矩阵显示像素的器件结构，包括形成在器件的第一金属层上的源极寻址线和TFT漏电极，形成在第二独立金属电平上的像素电极以及形成在第二金属层上的TFT栅电极和栅极寻址线 通过至少一个电介质层与第一电平和第二电平分开的第三金属电平，其中第二电平上的像素电极通过通孔连接电连接到第一电平上的漏电极，像素电容器 通过第二电平上的像素电极的一部分与第三电平上的相邻像素线的栅极寻址线的一部分的重叠来进行抖动。 该装置优选地使用基于打印的方法形成。

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