Abstract:
A tin oxide-based electrode formed from a composition including a majority component comprising tin-oxide (SnO2), and additives comprising CuO, ZnO, and a resistivity modifying species. The total amount of CuO and ZnO is not greater than about 0.3 wt%, and the ZnO is present in an amount within a range between about 0.1 wt% and about 0.19 wt%.
Abstract:
A tin oxide-based electrode formed from a composition comprising a major component SnO 2 is disclosed. The composition includes additives including aCuO, bZnO, and cSb 2 O 3 , wherein a, b, and c represent weight percentages of respective components, and 0.2 = (a + b)/c
Abstract translation:公开了由包含主要组分SnO 2的组合物形成的基于氧化锡的电极。 该组合物包含添加剂,包括aCuO,bZnO和cSb,其中a,b和c代表各组分的重量百分比,并且0.2 =(a + b )/ c <1.0。
Abstract:
A refractory object can include at least approximately 10 wt % Al2O3 and at least approximately 1 wt % SiO2. In an embodiment, the refractory object can include an additive. In a particular embodiment, the additive can include TiO2, Y2O3, SrO, BaO, CaO, Ta2O5, Fe2O3, ZnO, or MgO. The refractory object can include at least approximately 3 wt % of the additive. In an additional embodiment, the refractory object can include no greater than approximately 8 wt % of the additive. In a further embodiment, the creep rate of the refractory object can be at least approximately 1×10−6 h−1. In another embodiment, the creep rate of the refractory object can be no greater than approximately 5×10−5 h−1. In an illustrative embodiment, the refractory object can include a glass overflow trough or a forming block.
Abstract:
A refractory object can include at least 10 wt % Al2O3. Further, the refractory object may contain less than approximately 6 wt % SiO2 or may include a dopant that includes an oxide of Ti, Mg, Ta, Nb, or any combination thereof. In an embodiment, at least approximately 1% of the Al2O3 in the refractory object can be provided as reactive Al2O3. In another embodiment, the refractory object may have a density of at least approximately 3.55 g/cc, a corrosion rate of no greater than approximately 2.69 mm/year, or any combination of the foregoing. In a particular embodiment, the refractory object can be used to form an Al—Si—Mg glass sheet. In an embodiment, the refractory object may be formed by a process using a compound of Ti, Mg, Ta, Nb, or any combination thereof.
Abstract:
A component includes a body including zircon (ZrSiO4) grains, the body having a free silica intergranular phase present between the zircon grains and distributed substantially uniformly through the body. The body comprises a content of free silica not greater than about 2 wt. % for the total weight of the body.
Abstract:
A refractory article includes a body including a ceramic having an aluminosilicate present in an amount of at least 70 wt % and not greater than 99 wt % for a total weight of the body, and the body further includes a dopant including a Mg-containing oxide compound and a Fe-containing oxide compound, and the dopant is present in an amount within a range including at least 1 wt % and not greater than 12 wt %.
Abstract:
A refractory object can include at least 10 wt % Al2O3. In an embodiment, the refractory object can further include a dopant including an oxide of a rare earth element, Ta, Nb, Hf, or any combination thereof. In another embodiment, the refractory object may have a property such that the averaged grain size does not increase more than 500% during sintering, an aspect ratio less than approximately 4.0, a creep rate less than approximately 1.0×10−5 μm/(μm×hr), or any combination thereof. In a particular embodiment, the refractory object can be in the form of a refractory block or a glass overflow forming block. The glass overflow forming block can be useful in forming an Al—Si—Mg glass sheet. In a particular embodiment, a layer including Mg—Al oxide can initially form along exposed surfaces of the glass overflow forming block when forming the Al—Si—Mg glass sheet.
Abstract:
A refractory object can include a beta alumina. In an embodiment, the refractory object is capable of being used in a glass fusion process. In another embodiment, the refractory object can have a total Al2O3 content of at least 10% by weight. Additionally, a Mg—Al oxide may not form along a surface of the refractory object when the surface is exposed to a molten glass including an Al—Si—Mg oxide. In a particular embodiment, a refractory object can be in the form of a glass overflow forming block used to form a glass object that includes an Al—Si—Mg oxide. When forming the glass object, the glass material contacts the beta alumina, and during the flowing of the glass material, a Mg—Al oxide does not form along the beta alumina at the surface.