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    A SOFC stack having a high temperature bonded ceramic interconnect and method for making same
    12.
    发明专利
    A SOFC stack having a high temperature bonded ceramic interconnect and method for making same 未知

    公开(公告)号：AU2007234833A1

    公开(公告)日：2007-10-18

    申请号：AU2007234833

    申请日：2007-04-04

    Applicant: SAINT GOBAIN CERAMICS

    Inventor： MAHONEY F MICHAEL ,  KWON OH-HUN ,  DONAHUE WILLIAM J ,  PIETRAS JOHN D

    IPC: H01M8/24 ,  H01M8/02 ,  H01M8/12

    Abstract: The present disclosure is directed to an integrated SOFC stack including, a first cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode layer overlying the electrolyte layer. The SOFC stack also includes a second cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode overlying the electrolyte layer. The SOFC stack further includes a ceramic interconnect layer between the first cell and the second cell, the ceramic interconnect layer having a first high temperature bonding region along the interfacial region between the first cell and the ceramic interconnect layer. The ceramic interconnect layer also includes a second high temperature bonding region along the interfacial region between the second cell and the ceramic interconnect layer.

    REDUCTION-OXIDATION-TOLERANT ELECTRODES FOR SOLID OXIDE FUEL CELLS
    14.
    发明公开
    REDUCTION-OXIDATION-TOLERANT ELECTRODES FOR SOLID OXIDE FUEL CELLS 有权
    消除硫酸盐固化剂ELEKTRODENFÜRFESTOXIDBRENNSTOFFZELLEN

    公开(公告)号：EP2377192A4

    公开(公告)日：2012-08-08

    申请号：EP09837922

    申请日：2009-12-17

    Applicant: SAINT GOBAIN CERAMICS

    Inventor： MAHONEY F MICHAEL

    IPC: H01M8/02 ,  H01M4/86 ,  H01M4/88 ,  H01M4/90 ,  H01M8/12

    CPC classification number: C04B35/482 ,  C04B38/00 ,  C04B2111/00853 ,  C04B2235/3246 ,  C04B2235/3251 ,  H01M4/8621 ,  H01M4/8652 ,  H01M4/8875 ,  H01M4/8882 ,  H01M4/8885 ,  H01M4/9033 ,  H01M4/9066 ,  H01M8/12 ,  H01M2008/1293 ,  C04B38/0054 ,  C04B38/0074

    Abstract: An anode component of a solid oxide fuel cell is formed by combining a relatively coarse yttria-stabilized-zirconium (YSZ) powder, that is substantially composed of elongated particles, with a relatively fine NiO/YSZ or NiO powder of reduced particle size, whereby, upon sintering the combined powders, the coarse YSZ powder forms a microstructural cage of open porosity wherein the fine powder is distributed through the open porosity of the cage. A method of forming a cathode component includes combining a coarse YSZ powder, that is substantially composed of elongated particles, with a fine lanthanum strontium manganite powder of reduced particle size, whereby, upon sintering the combined powders, the coarse YSZ powder forms a microstructural cage of open porosity, wherein the fine powder is distributed through the open porosity of the cage.

    Abstract translation: 固体氧化物燃料电池的阳极部件通过将基本上由细长的颗粒组成的较粗的氧化钇稳定的锆（YSZ）粉末与粒径较小的NiO / YSZ或NiO粉末组合而形成，由此 在烧结组合的粉末时，粗YSZ粉末形成开放孔隙率的微结构保持架，其中细粉末通过保持架的开放孔隙分布。 形成阴极部件的方法包括将粗大的YSZ粉末与细粒度的镧镧锰矿粉末组合，从而在烧结组合的粉末时，粗YSZ粉末形成微结构笼 的开放孔隙度，其中细粉末通过笼的开放孔隙分布。

    A SOFC STACK HAVING A HIGH TEMPERATURE BONDED CERAMIC INTERCONNECT AND METHOD FOR MAKING SAME
    16.
    发明专利
    A SOFC STACK HAVING A HIGH TEMPERATURE BONDED CERAMIC INTERCONNECT AND METHOD FOR MAKING SAME 未知

    公开(公告)号：CA2785959C

    公开(公告)日：2013-10-29

    申请号：CA2785959

    申请日：2007-04-04

    Applicant: SAINT GOBAIN CERAMICS

    Inventor： DONAHUE WILLIAM J ,  KWON OH-HUN ,  MAHONEY F MICHAEL ,  PIETRAS JOHN D

    IPC: H01M8/10

    Abstract: The present disclosure is directed to an integrated SOFC stack including, a first cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode layer overlying the electrolyte layer. The SOFC stack also includes a second cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode overlying the electrolyte layer. The SOFC stack further includes a ceramic interconnect layer between the first cell and the second cell, the ceramic interconnect layer having a first high temperature bonding region along the interfacial region between the first cell and the ceramic interconnect layer. The ceramic interconnect layer also includes a second high temperature bonding region along the interfacial region between the second cell and the ceramic interconnect layer.

    A SOFC STACK HAVING A HIGH TEMPERATURE BONDED CERAMIC INTERCONNECT AND METHOD FOR MAKING SAME
    17.
    发明专利
    A SOFC STACK HAVING A HIGH TEMPERATURE BONDED CERAMIC INTERCONNECT AND METHOD FOR MAKING SAME 未知

    公开(公告)号：CA2647414C

    公开(公告)日：2012-10-30

    申请号：CA2647414

    申请日：2007-04-04

    Applicant: SAINT GOBAIN CERAMICS

    Inventor： DONAHUE WILLIAM J ,  KWON OH-HUN ,  MAHONEY F MICHAEL ,  PIETRAS JOHN D

    IPC: H01M8/24 ,  H01M8/02 ,  H01M8/12

    Abstract: The present disclosure is directed to an integrated SOFC stack including, a first cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode layer overlying the electrolyte layer. The SOFC stack also includes a second cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode overlying the electrolyte layer. The SOFC stack further includes a ceramic interconnect layer between the first cell and the second cell, the ceramic interconnect layer having a first high temperature bonding region along the interfacial region between the first cell and the ceramic interconnect layer. The ceramic interconnect layer also includes a second high temperature bonding region along the interfacial region between the second cell and the ceramic interconnect layer.

    A SOFC stack having a high temperature bonded ceramic interconnect and method for making same
    18.
    发明专利
    A SOFC stack having a high temperature bonded ceramic interconnect and method for making same 未知

    公开(公告)号：AU2007234833B2

    公开(公告)日：2010-03-25

    申请号：AU2007234833

    申请日：2007-04-04

    Applicant: SAINT GOBAIN CERAMICS & PLASTICS INC

    Inventor： MAHONEY F MICHAEL ,  KWON OH-HUN ,  DONAHUE WILLIAM J ,  PIETRAS JOHN D

    IPC: H01M8/24 ,  H01M8/02 ,  H01M8/12

    Abstract: The present disclosure is directed to an integrated SOFC stack including, a first cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode layer overlying the electrolyte layer. The SOFC stack also includes a second cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode overlying the electrolyte layer. The SOFC stack further includes a ceramic interconnect layer between the first cell and the second cell, the ceramic interconnect layer having a first high temperature bonding region along the interfacial region between the first cell and the ceramic interconnect layer. The ceramic interconnect layer also includes a second high temperature bonding region along the interfacial region between the second cell and the ceramic interconnect layer.

    A SOFC STACK HAVING A HIGH TEMPERATURE BONDED CERAMIC INTERCONNECT AND METHOD FOR MAKING SAME
    20.
    发明专利
    A SOFC STACK HAVING A HIGH TEMPERATURE BONDED CERAMIC INTERCONNECT AND METHOD FOR MAKING SAME 未知

    公开(公告)号：CA2785959A1

    公开(公告)日：2007-10-18

    申请号：CA2785959

    申请日：2007-04-04

    Applicant: SAINT GOBAIN CERAMICS

    Inventor： DONAHUE WILLIAM J ,  KWON OH-HUN ,  MAHONEY F MICHAEL ,  PIETRAS JOHN D

    IPC: H01M8/10

    Abstract: The present disclosure is directed to an integrated SOFC stack including, a first cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode layer overlying the electrolyte layer. The SOFC stack also includes a second cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode overlying the electrolyte layer. The SOFC stack further includes a ceramic interconnect layer between the first cell and the second cell, the ceramic interconnect layer having a first high temperature bonding region along the interfacial region between the first cell and the ceramic interconnect layer. The ceramic interconnect layer also includes a second high temperature bonding region along the interfacial region between the second cell and the ceramic interconnect layer.

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