公开(公告)号：US09349770B2

公开(公告)日：2016-05-24

申请号：US14178066

申请日：2014-02-11

Applicant: Semiconductor Components Industries, LLC

Inventor： Victor Lenchenkov

IPC: H01L31/0216 ,  H01L27/146 ,  H01L31/028 ,  H01L31/0232

CPC classification number: H01L27/14649 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14645 ,  H01L31/02162 ,  H01L31/02327 ,  H01L31/028

Abstract: An imaging device may include an image sensor having an array of image pixels. The array of image pixels may include one or more infrared pixels that are configured to detect infrared light. The infrared pixels may include reflective structures for increasing quantum efficiency in the infrared spectral range. The reflective structures may include first and second parallel structures formed on opposing sides of a photodiode in an infrared pixel. The reflective structures may be partially transparent to infrared light and non-transparent to visible light. The reflective structures may form an optical cavity so that infrared light that enters an infrared pixel is reflected back and forth between the reflective structures until it is absorbed by the photodiode in the infrared pixel. Reflective structures may also be formed between infrared filters and color filters to suppress optical crosstalk between infrared pixels and color pixels.

Abstract translation: 成像装置可以包括具有图像像素阵列的图像传感器。 图像像素阵列可以包括被配置为检测红外光的一个或多个红外像素。 红外像素可以包括用于在红外光谱范围内增加量子效率的反射结构。 反射结构可以包括形成在红外像素中的光电二极管的相对侧上的第一和第二平行结构。 反射结构可以对于红外光部分透明，对可见光不透明。 反射结构可以形成光腔，使得进入红外像素的红外光在反射结构之间来回反射，直到其被红外像素中的光电二极管吸收。 也可以在红外滤光器和滤色器之间形成反射结构，以抑制红外像素和彩色像素之间的光学串扰。

公开(公告)号：US09231013B2

公开(公告)日：2016-01-05

申请号：US13669180

申请日：2012-11-05

Applicant: Semiconductor Components Industries, LLC

Inventor： Victor Lenchenkov

IPC: H01L27/00 ,  H01J40/14 ,  H01L27/146 ,  G01J3/51

CPC classification number: H01L27/14643 ,  G01J3/51 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645

Abstract: Resonance enhanced color filter arrays are provided for image sensors. Resonance cavities formed with color filter materials that enhance the color filtering capabilities of the color filter materials. Resonance enhanced color filter arrays may be provided for back side illumination image sensors and front side illumination image sensors. A layer of high refractive index material or metamaterial may be provided between a microlens and a color filter material to serve as a first partially reflecting interface for the resonance cavity. An optional layer of high refractive index material or metamaterial may be provided between color filter material and a substrate. In front side illumination image sensors, color filter material may be provided in a light guide structure that extends through interlayer dielectric. The color filter material in the light guide structure may form at least part of a resonance cavity for a resonance enhanced color filter array.

Abstract translation: 为图像传感器提供共振增强滤色器阵列。 谐振腔由彩色滤光片材料形成，增强了滤色器材料的滤色能力。 可以为后侧照明图像传感器和前侧照明图像传感器提供共振增强滤色器阵列。 可以在微透镜和滤色器材料之间提供一层高折射率材料或超材料，以用作谐振腔的第一部分反射界面。 可以在滤色器材料和基底之间提供任选的高折射率材料层或超材料层。 在前侧照明图像传感器中，滤色器材料可以设置在延伸穿过层间电介质的导光结构中。 导光结构中的滤色器材料可以形成谐振增强滤色器阵列的谐振腔的至少一部分。

公开(公告)号：US10325947B2

公开(公告)日：2019-06-18

申请号：US14157492

申请日：2014-01-16

Applicant: Semiconductor Components Industries, LLC

Inventor： Sergey Velichko ,  Gennadiy Agranov ,  Victor Lenchenkov

IPC: H01L27/00 ,  H01L27/146 ,  H04N5/3745 ,  H04N5/232

Abstract: An image sensor operable in global shutter mode may include an array of image pixels. Each image pixel may include a photodiode for detecting incoming light and a separate storage diode for temporarily storing charge. To maximize the efficiency of the image pixel array, image pixels may include light guide structures and light shield structures. The light guide structures may be used to funnel light away from the storage node and into the photodiode, while the light shield structures may be formed over storage nodes to block light from entering the storage nodes. The light guide structures may fill cone-shaped cavities in a dielectric layer, or the light guide structures may form sidewalls having a ring-shaped horizontal cross section. Metal interconnect structures in the dielectric layer may be arranged in concentric annular structures to form a near-field diffractive element that funnels light towards the appropriate photodiode.

公开(公告)号：US20190081098A1

公开(公告)日：2019-03-14

申请号：US15701116

申请日：2017-09-11

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Victor Lenchenkov ,  Ulrich Boettiger

IPC: H01L27/146 ,  G02B3/00 ,  G02B13/00 ,  H04N5/353 ,  H04N9/04 ,  H04N9/07 ,  H04N5/378

Abstract: An image sensor may include an array of pixels. Pixels in the array may include a photodiode that converts incident light into electrical charge and a charge storage region for storing the electrical charge before it is read out from the pixel. Pixels in the array may include a microlens formed over the photodiode that directs light onto the photodiode. Pixels in the array may include an additional array of microlenses between the microlens and the photodiode. The additional array of microlenses may direct light away from the charge storage region to prevent charge stored at the charge storage region from being affected by light that is not incident upon the photodiode. The image sensor may be a backside illuminated image sensor that operates in a global shutter mode.

公开(公告)号：US09786702B2

公开(公告)日：2017-10-10

申请号：US14011560

申请日：2013-08-27

Applicant: Semiconductor Components Industries, LLC

Inventor： Victor Lenchenkov

IPC: H01L27/146 ,  H01L27/144

CPC classification number: H01L27/1446 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464

Abstract: An image sensor with an array of image sensor pixels is provided. Each image pixel may include a photodiode and associated pixel circuits formed in the front surface of a semiconductor substrate. Buried light shielding structures may be formed on the back surface of the substrate to prevent pixel circuitry that is formed in the substrate between two adjacent photodiodes from being exposed to incoming light. The buried light shielding structures may be lined with absorptive antireflective coating material to prevent light from being reflected off the surface of the buried light shielding structures. Forming buried light shielding structures with absorptive antireflective coating material can help reduce optical pixel crosstalk and enhance signal to noise ratio.

公开(公告)号：US09478574B2

公开(公告)日：2016-10-25

申请号：US14011660

申请日：2013-08-27

Applicant: Semiconductor Components Industries, LLC

Inventor： Victor Lenchenkov ,  Dongqing Cao

IPC: H04N3/14 ,  H04N5/335 ,  H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14601 ,  H01L27/14607 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685 ,  H04N5/2254 ,  H04N5/335

Abstract: A front-side illuminated image sensor with an array of image sensor pixels is provided. Each image pixel may include a photodiode, transistor gate structures, shallow trench isolation structures, and other associated pixel circuits formed in a semiconductor substrate. Buried light shielding structures that are opaque to light may be formed over regions of the substrate to prevent the transistor gate structures, shallow trench isolation structures, and the other associated pixel circuits from being exposed to stray light. Buried light shielding structures formed in this way can help reduce optical pixel crosstalk.

Abstract translation: 提供具有图像传感器像素阵列的前侧照明图像传感器。 每个图像像素可以包括形成在半导体衬底中的光电二极管，晶体管栅极结构，浅沟槽隔离结构和其它相关联的像素电路。 可以在衬底的不同区域上形成对光不透明的掩埋光屏蔽结构，以防止晶体管栅极结构，浅沟槽隔离结构和其它相关联的像素电路暴露于杂散光。 以这种方式形成的掩埋光屏蔽结构有助于减少光学像素串扰。

公开(公告)号：US09431443B1

公开(公告)日：2016-08-30

申请号：US14723675

申请日：2015-05-28

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Victor Lenchenkov ,  Hamid Soleimani

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor including a semiconductor layer. A light absorber layer couples with the semiconductor layer at a pixel of the image sensor and absorbs incident light to substantially prevent the incident light from entering the semiconductor layer. The light absorber layer heats a depletion region of the semiconductor layer in response to absorbing the incident light, creating electron/hole pairs. The light absorber layer may include one or more narrow bandgap materials.

Abstract translation: 包括半导体层的图像传感器。 光吸收层在图像传感器的像素处与半导体层耦合，并吸收入射光以基本上防止入射光进入半导体层。 光吸收层响应于吸收入射光而加热半导体层的耗尽区，产生电子/空穴对。 光吸收层可以包括一个或多个窄带隙材料。

公开(公告)号：US20150062392A1

公开(公告)日：2015-03-05

申请号：US14469498

申请日：2014-08-26

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Victor Lenchenkov ,  Xianmin Yi

IPC: H01L31/02 ,  H01L31/0232 ,  H04N5/359

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L31/02162 ,  H01L31/02164 ,  H01L31/02168 ,  H04N5/369

Abstract: An image sensor with an array of image sensor pixels is provided. Each pixel may include a photodiode and associated pixel circuits formed in a semiconductor substrate. Buried light shields may be formed on the substrate to present pixel circuitry that is formed in the substrate between two adjacent photodiodes from being exposed to incoming light. Metal interconnect muting structures may be formed over the buried light shields. In one embodiment, light blocking structures may be formed to completely seal the interconnect routing structures. The light blocking structures may be formed on top of the buried light shields or on the surface of the substrate. In another embodiment, planar light blocking structures that are parallel to the surface of the substrate may be formed between metal routing layers to help absorb stray light. Light blocking structures formed in these ways can help reduce optical crosstalk and enhance global shutter efficiency.

Abstract translation: 提供具有图像传感器像素阵列的图像传感器。 每个像素可以包括形成在半导体衬底中的光电二极管和相关联的像素电路。 可以在衬底上形成掩埋的光屏蔽，以呈现形成在两个相邻光电二极管之间的衬底中的像素电路，以暴露于入射光。 金属互连静电结构可以形成在掩埋的光屏蔽上。 在一个实施例中，可以形成遮光结构以完全密封互连路由结构。 遮光结构可以形成在掩埋的光屏蔽的顶部或基板的表面上。 在另一个实施例中，平行于衬底表面的平面光阻结构可以形成在金属布线层之间，以帮助吸收杂散光。 以这些方式形成的遮光结构可以帮助减少光学串扰并增强全局快门效率。