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公开(公告)号：EP3364467A1
公开(公告)日：2018-08-22
申请号：EP18166240.4
申请日：2012-09-14
Applicant: Seoul Viosys Co., Ltd.
Inventor： CHAE, Jong Hyeon , JANG, Jong Min , ROH, Won Young , SUH, Dae Woong , CHO, Dae Sung , LEE, Joon Sup , LEE, Kyu Ho , IN, Chi Hyung
Abstract: The present invention relates to a light emitting diode and a method of manufacturing same. The light emitting diode includes: a first conductive semiconductor layer; a plurality of mesas that are disposed spaced apart from one another on the first conductive semiconductor layer, each mesa including an active layer and a second conductive semiconductor layer; reflective electrodes that are respectively disposed on the plurality of mesas and come into ohmic contact with the second conductive semiconductor layer; openings that cover the plurality of mesas and the first conductive semiconductor layer, are electrically insulated from the mesas, and expose the reflective electrodes to the upper region of each mesa; and a current spreading layer that comes into ohmic contact with the first conductive semiconductor layer. Thus, a light emitting diode that improves current spreading performance may be provided.
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公开(公告)号：EP3361517A1
公开(公告)日：2018-08-15
申请号：EP18158047.3
申请日：2012-09-14
Applicant: Seoul Viosys Co., Ltd.
Inventor： CHAE, Jong Hyeon , JANG, Jong Min , ROH, Won Young , SUH, Dae Woong , CHO, Dae Sung , LEE, Joon Sup , LEE, Kyu Ho , IN, Chi Hyun
CPC classification number: H01L33/405 , H01L33/0075 , H01L33/08 , H01L33/12 , H01L33/14 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/62 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
Abstract: The invention relates to a light emitting diode. The light emitting diode includes a light emitting structure comprising a first conductivity type semiconductor layer (110), an active layer (120), and a second conductivity type semiconductor layer (130) formed on a substrate (100). Mesa-etched areas (150) are formed in a hole type from the surface of the second conductivity type semiconductor layer (130) to the surface of the first semiconductor layer (110). A reflective electrode (140) is formed on the second conductive type semiconductor layer (130). A lower insulation layer (200) covers the overall surface of the light emitting structure, the mesa-etched areas (150) and the reflective electrode (140), wherein the lower insulation layer (200) allows an upper surface of the reflective electrode (140) to be partially exposed therethrough and the surface of the first semiconductor layer (110) to be exposed therethrough in the mesa-etched areas (150). A current spreading layer (210) is formed on the lower insulation layer (200) covering the first conductivity type semiconductor layer (110). The current spreading layer (210) is electrically connected to the first conductivity type semiconductor layer (110), wherein the reflective electrodes (140) are electrically isolated from the current spreading layer (210) by the lower insulation layer (200). An upper insulation layer (220) is formed on the current spreading layer (210), with both the current spreading layer (210) and the reflective electrode (140) being partially exposed through the upper insulation layer (220). A first pad (230) is electrically connected to the current spreading layer (210) exposed through the upper insulation layer (220), and a second pad (240) is electrically connected to the reflective electrode (140) exposed through the upper insulation layer (220).
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公开(公告)号：EP2757598B1
公开(公告)日：2017-04-26
申请号：EP12832213.8
申请日：2012-09-14
Applicant: Seoul Viosys Co., Ltd.
Inventor： CHAE, Jong Hyeon , JANG, Jong Min , ROH, Won Young , SUH, Dae Woong , CHO, Dae Sung , LEE, Joon Sup , LEE, Kyu Ho , IN, Chi Hyun
CPC classification number: H01L33/405 , H01L33/0075 , H01L33/08 , H01L33/12 , H01L33/14 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/62 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
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