Abstract:
An illumination device according to an embodiment comprises a light-emitting diode, wherein the light-emitting diode comprises: an n-type nitride semiconductor layer; an active layer located on the n-type nitride semiconductor layer; and a p-type nitride semiconductor layer located on the active layer, and the light-emitting diode emits light that varies from yellow light to white light according to input currents.
Abstract:
A display device is provided. The display device comprises: a display substrate; a first micro LED module disposed on the display substrate; and a second micro LED module disposed on the display substrate while being adjacent to the first micro LED module. The first micro LED module and the second micro LED module have side surfaces facing each other, and the facing side surfaces of the first micro LED module and the second micro LED module are inclined in the same direction with respect to the upper surface of the display substrate.
Abstract:
Disclosed are a light-emitting device for a display, and a display apparatus comprising same. A display apparatus, according to one embodiment, comprises a circuit board, and a plurality of pixels arranged on the circuit board, wherein at least one of the pixels comprises a first light-emitting device and a second light-emitting device that is spaced apart from the first light-emitting device in the transverse direction. The first light-emitting device has a first LED laminate which generates light of a first peak wavelength, and the second light-emitting device includes a second LED laminate which generates light of a second peak wavelength, and a third LED laminate which is disposed on the second LED laminate and generates light of a third peak wavelength.
Abstract:
Disclosed herein are a light emitting diode chip and a light emitting diode package having a distributed Bragg reflector. The light emitting diode chip includes a substrate, a light emitting structure positioned on an upper portion of the substrate and including an active layer interposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector that reflects light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of 90% or more for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.