公开(公告)号：US10678073B2

公开(公告)日：2020-06-09

申请号：US15656137

申请日：2017-07-21

Applicant: Skorpios Technologies, Inc.

Inventor： Stephen B. Krasulick ,  Damien Lambert ,  Andrew Bonthron ,  Guoliang Li

IPC: G02B6/26 ,  G02F1/01 ,  G02F1/017 ,  H03H7/38 ,  G02F1/015

Abstract: A modulator and a capacitor are integrated on a semiconductor substrate for modulating a laser beam. Integrating the capacitor on the substrate reduces parasitic inductance for high-speed optical communication.

公开(公告)号：US10001600B2

公开(公告)日：2018-06-19

申请号：US15487918

申请日：2017-04-14

Applicant: Skorpios Technologies, Inc.

Inventor： Guoliang Li ,  Damien Lambert ,  Nikhil Kumar

IPC: G02B6/14 ,  G02B6/132 ,  G02B6/136 ,  G02B6/122 ,  G02B6/30 ,  G02B6/12

CPC classification number: G02B6/14 ,  G02B6/1228 ,  G02B6/132 ,  G02B6/136 ,  G02B6/305 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12147 ,  G02B2006/12152

Abstract: A waveguide mode expander couples a smaller optical mode in a semiconductor waveguide to a larger optical mode in an optical fiber. The waveguide mode expander comprises a shoulder and a ridge. In some embodiments, the ridge of the waveguide mode expander has a plurality of stages, the plurality of stages having different widths at a given cross section.

公开(公告)号：US09885832B2

公开(公告)日：2018-02-06

申请号：US14722970

申请日：2015-05-27

Applicant: Skorpios Technologies, Inc.

Inventor： Damien Lambert ,  Nikhil Kumar ,  Elton Marchena ,  Daming Liu ,  Guoliang Li ,  John Zyskind

IPC: G02B6/14 ,  G02B6/122 ,  G02B6/132 ,  G02B6/136 ,  G02B6/30 ,  G02B6/12

CPC classification number: G02B6/14 ,  G02B6/1228 ,  G02B6/132 ,  G02B6/136 ,  G02B6/305 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12147 ,  G02B2006/12152

Abstract: A waveguide mode expander couples a smaller optical mode in a semiconductor waveguide to a larger optical mode in an optical fiber. The waveguide mode expander comprises a shoulder made of crystalline silicon and a ridge made of non-crystalline silicon (e.g., amorphous silicon). In some embodiments, the ridge of the waveguide mode expander has a plurality of stages, the plurality of stages have different widths and/or thicknesses at a given cross section.

公开(公告)号：US09658401B2

公开(公告)日：2017-05-23

申请号：US14722983

申请日：2015-05-27

Applicant: Skorpios Technologies, Inc.

Inventor： Guoliang Li ,  Damien Lambert ,  Nikhil Kumar

IPC: G02B6/12 ,  G02B6/14 ,  G02B6/30 ,  G02B6/122 ,  G02B6/132 ,  G02B6/136

CPC classification number: G02B6/14 ,  G02B6/1228 ,  G02B6/132 ,  G02B6/136 ,  G02B6/305 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12147 ,  G02B2006/12152

Abstract: A waveguide mode expander couples a smaller optical mode in a semiconductor waveguide to a larger optical mode in an optical fiber. The waveguide mode expander comprises a shoulder and a ridge. In some embodiments, the ridge of the waveguide mode expander has a plurality of stages, the plurality of stages having different widths at a given cross section.

公开(公告)号：US20160306111A1

公开(公告)日：2016-10-20

申请号：US15133920

申请日：2016-04-20

Applicant: Skorpios Technologies, Inc.

Inventor： Damien Lambert

IPC: G02B6/125 ,  G02B6/132 ,  G02B6/136

CPC classification number: G02B6/125 ,  G02B6/132 ,  G02B6/136 ,  G02B6/4214 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12104 ,  G02B2006/12147 ,  G02B2006/12169

Abstract: A method forms a vertical output coupler for a waveguide, formed of waveguide material and disposed within a layer stack on a top surface of a wafer. The method includes etching through a portion of the wafer to form a via that exposes the waveguide material, and etching the waveguide material to remove at least a first portion of the waveguide. The etching forms a tilted plane in the waveguide material. The method further includes coating the first tilted plane with one or more reflective layers, to form a tilted mirror in contact with the first tilted plane in the waveguide material. The tilted mirror forms the vertical output coupler such that light propagating through the waveguide is deflected by the tilted mirror, and exits the waveguide.

Abstract translation: 一种方法形成用于波导的垂直输出耦合器，由波导材料形成并设置在晶片顶表面上的层叠中。 该方法包括蚀刻通过晶片的一部分以形成暴露波导材料的通孔，以及蚀刻波导材料以去除波导的至少第一部分。 蚀刻在波导材料中形成倾斜平面。 该方法还包括用一个或多个反射层涂覆第一倾斜平面，以形成与波导材料中的第一倾斜平面接触的倾斜反射镜。 倾斜的反射镜形成垂直输出耦合器，使得通过波导传播的光被倾斜的反射镜偏转，并离开波导。

公开(公告)号：US11585977B2

公开(公告)日：2023-02-21

申请号：US16914156

申请日：2020-06-26

Applicant: Skorpios Technologies, Inc.

Inventor： Damien Lambert

IPC: H01S5/02 ,  G02B6/12 ,  H01S5/02326 ,  G02B6/122 ,  G02B6/136 ,  H01S5/026 ,  H01S5/028 ,  H01S5/22 ,  H01S5/30 ,  H01S5/343 ,  H01S5/40 ,  H04B10/50 ,  H04J14/02

Abstract: A semiconductor laser has a mirror formed in a gain chip. The mirror can be placed in the gain chip to provide a broadband reflector to support multiple lasers using the gain chip. The mirror can also be placed in the gain chip to have the semiconductor laser be more efficient or more powerful by changing an optical path length of the gain of the semiconductor laser.

公开(公告)号：US20210116640A1

公开(公告)日：2021-04-22

申请号：US16985860

申请日：2020-08-05

Applicant: Skorpios Technologies, Inc.

Inventor： Guoliang Li ,  Damien Lambert ,  Nikhil Kumar

IPC: G02B6/14 ,  G02B6/122 ,  G02B6/132 ,  G02B6/136 ,  G02B6/30

Abstract: A waveguide mode expander couples a smaller optical mode in a semiconductor waveguide to a larger optical mode in an optical fiber. The waveguide mode expander comprises a shoulder and a ridge. In some embodiments, the ridge of the waveguide mode expander has a plurality of stages, the plurality of stages having different widths at a given cross section.

公开(公告)号：US20200371383A1

公开(公告)日：2020-11-26

申请号：US16843761

申请日：2020-04-08

Applicant: Skorpios Technologies, Inc.

Inventor： Stephen B. Krasulick ,  Damien Lambert ,  Andrew Bonthron ,  Guoliang Li

IPC: G02F1/017 ,  G02F1/01 ,  H03H7/38

Abstract: A modulator and a capacitor are integrated on a semiconductor substrate for modulating a laser beam. Integrating the capacitor on the substrate reduces parasitic inductance for high-speed optical communication.

公开(公告)号：US20200083662A1

公开(公告)日：2020-03-12

申请号：US16389089

申请日：2019-04-19

Applicant: Skorpios Technologies, Inc.

Inventor： Damien Lambert

IPC: H01S5/022 ,  G02B6/136 ,  G02B6/122 ,  H01L23/00 ,  G02B6/42

Abstract: A composite semiconductor laser is made by securing a III-V wafer to a transfer wafer. A substrate of the III-V wafer is removed, and the III-V wafer is etched into a plurality of chips while the III-V wafer is secured to the transfer wafer. The transfer wafer is singulated. A portion of the transfer wafer is used as a handle for bonding the chip in a recess of a silicon device. The chip is used as a gain medium for the semiconductor laser.

公开(公告)号：US10319693B2

公开(公告)日：2019-06-11

申请号：US14741181

申请日：2015-06-16

Applicant: Skorpios Technologies, Inc.

Inventor： Damien Lambert

IPC: H01L23/00 ,  G02B6/42 ,  G02B6/36 ,  H01L21/20 ,  H01L23/31 ,  H01L21/18 ,  H01L25/065 ,  H01L25/00

Abstract: Micro pillars are formed in silicon. The micro pillars are used in boding the silicon to hetero-material such as III-V material, ceramics, or metals. In bonding the silicon to the hetero-material, indium is used as a bonding material and attached to the hetero-material. The bonding material is heated and the silicon and the hetero-material are pressed together. As the silicon and the hetero-material are pressed together, the micro pillars puncture the bonding material. In some embodiments, pedestals are used in the silicon as hard stops to align the hetero-material with the silicon.