公开(公告)号：JP2001007420A

公开(公告)日：2001-01-12

申请号：JP17120399

申请日：1999-06-17

Applicant: SONY CORP

Inventor： MAKINO EIJI ,  ISHII SATOSHI ,  TAKIGUCHI MASAFUMI

IPC: H01L43/08 ,  G01R33/09 ,  G11B5/39 ,  H01F10/32

Abstract: PROBLEM TO BE SOLVED: To contrive the rise of the rate of magnetic resistance change and the improvement of heat resistance, in the case where the fixed magnetic structure in spin valve film constitution has an amorphous magnetic layer. SOLUTION: This is a magnetic resistance effect film which has a regular anti-ferromagnetic layer 1, a fixed magnetic structure 2 joined with it, a nonmagnetic conductive layer 3, and a free magnetic layer part 4 having at least one or more layers, and which has an amorphous magnetic layer 5 in the fixed magnetic structure part 2, and this junction between the amorphous magnetic layer 5 and the nonmagnetic conductive layer 3 is performed through a crystalline ferromagnetic middle layer 61.