公开(公告)号：JP2014074864A

公开(公告)日：2014-04-24

申请号：JP2012223508

申请日：2012-10-05

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KIRITA SHINA ,  TAKAI YUICHI ,  TAKAHASHI KENICHI ,  NIKOLAUS KNORR ,  RENE WIRTZ ,  SILVIA ROSSELLI

IPC: G02B26/08 ,  G02B3/00 ,  G02B3/06 ,  G02B3/14 ,  G02B5/00 ,  G02B27/22 ,  G02F1/17 ,  G09F9/00 ,  G09F9/37

Abstract: PROBLEM TO BE SOLVED: To provide an optical element capable of performing precise driving at a low voltage while ensuring sufficient insulation performance.SOLUTION: The optical element includes: first and second electrodes disposed opposed to each other; an insulation film which has a dielectric layer and an ion barrier layer which are laminated in order to cover a face of the first electrode opposing to the second electrode; and polar liquid and nonpolar liquid sealed between the insulation film and the second electrode each of which has a refractive index different from each other. The dielectric layer has a permittivity higher than that of the ion barrier layer, the ion barrier layer prevents the ion included in the polar liquid from transmitting, and a water-repellent film is positioned at the uppermost layer of the insulation film and has an affinity with the nonpolar liquid.

Abstract translation: 要解决的问题：提供能够在确保足够的绝缘性能的同时在低电压下执行精确驱动的光学元件。解决方案：光学元件包括：彼此相对布置的第一和第二电极; 绝缘膜，其具有层压以覆盖与第二电极相对的第一电极的表面的电介质层和离子阻挡层; 以及极性液体和非极性液体，密封在绝缘膜和第二电极之间，每个电极具有彼此不同的折射率。 电介质层的电容率高于离子阻挡层的介电常数，离子阻挡层防止极性液体中所含的离子透过，并且防水膜位于绝缘膜的最上层，具有亲和性 与非极性液体。

公开(公告)号：JP2010147160A

公开(公告)日：2010-07-01

申请号：JP2008321088

申请日：2008-12-17

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KIRITA SHINA ,  KAWASHIMA TOSHITAKA

IPC: H01L29/786 ,  C23C14/08 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin-film transistor improving reproducibility of a process.
SOLUTION: In the thin-film transistor 1, a gate electrode 12 and an oxide semiconductor film 15 is disposed on a substrate 11 with a gate insulating film 13 interposed therebetween and a source electrode 14A and a drain electrode 14B are disposed in contact with the oxide semiconductor film 15. The oxide semiconductor film 15 is formed by a DC sputtering method and a DC voltage Vdc for formation is set according to a carrier density D. Control of the carrier density D is facilitated by utilizing a proportional relation between the DC voltage Vdc and the carrier density D. A result of control is less susceptible to the accuracy of another equipment such as an MFC (Mass Flow Controller) or the like than in the case of controlling the carrier density by oxygen partial pressure adjustment.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 解决的问题：提供一种提高工艺的再现性的薄膜晶体管的制造方法。 解决方案：在薄膜晶体管1中，栅极电极12和氧化物半导体膜15设置在基板11上，栅极绝缘膜13插入其间，源电极14A和漏电极14B设置在 与氧化物半导体膜15接触。氧化物半导体膜15通过DC溅射法形成，并且根据载流子浓度D设定用于形成的DC电压Vdc。通过利用载流子密度D的比例关系来促进载流子密度D的控制 直流电压Vdc和载流子密度D.与通过氧分压调节来控制载流子浓度的情况相比，控制结果对于诸如MFC（质量流量控制器）等的其他设备的精度不太敏感。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010121183A

公开(公告)日：2010-06-03

申请号：JP2008296414

申请日：2008-11-20

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KIRITA SHINA ,  KAWASHIMA TOSHITAKA ,  NAGATA TAKANORI ,  KAMAMORI YUICHI

IPC: C23C14/34 ,  C04B35/453 ,  C23C14/08 ,  C23C14/58 ,  H01B5/14 ,  H01B13/00 ,  H01L21/285

CPC classification number: H01B1/08 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3414

Abstract: PROBLEM TO BE SOLVED: To provide a zinc oxide based sputtering target having a sufficiently high density and a satisfactorily low resistivity and to provide a method of manufacturing the zinc oxide based sputtering target. SOLUTION: The zinc oxide based sputtering target is manufactured by using γ-Al 2 O 3 as a dopant material, and a zinc oxide based transparent conductive film is formed by using the zinc oxide based sputtering target according to a sputtering method. Therein, γ-Al 2 O 3 is contained in the zinc oxide based sputtering target by 1 to 3 wt.%. The zinc oxide based sputtering target is manufactured by mixing zinc oxide powder and γ-Al 2 O 3 powder and sintering the mixed powder at a temperature of 1,150 to 1,300 °C. A particle size of γ-Al 2 O 3 is preferably specified to be 0.5 μm or less. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供具有足够高的密度和令人满意的低电阻率的氧化锌基溅射靶，并提供一种制造氧化锌基溅射靶的方法。 解决方案：通过使用γ-Al O 3 作为掺杂剂材料制造氧化锌基溅射靶，形成氧化锌系透明导电膜 通过使用基于氧化锌的溅射靶根据溅射法。 其中，氧化锌系溅射靶中含有1〜3重量％的γ-Al 2 SB 3 O 3。 氧化锌系溅射靶是通过将氧化锌粉末与γ-Al O 3 粉末混合而制成的，并在1,150〜1300℃的温度下烧结混合粉末。 优选将γ-Al 2 O 3 / SB 3的粒径规定为0.5μm以下。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009140626A

公开(公告)日：2009-06-25

申请号：JP2007313100

申请日：2007-12-04

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KIRITA SHINA ,  KAWASHIMA TOSHITAKA

IPC: H01B13/00 ,  B32B7/02 ,  B32B9/00 ,  C23C14/08 ,  H01B5/14

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a transparent conductive thin film, which can easily providing both high permeability and low specific resistance of a film, and to provide a transparent conductive thin film manufactured by the same.
SOLUTION: In the method of manufacturing a transparent conductive thin film, a transparent conductive thin film is formed on a substrate 11 by a sputtering method. Using a target 3 of ZnO with Al
2 O
3 doped or ZnO with Ga
2 O
3 doped, a pulsating DC voltage of high frequency is applied from a pulse DC power source 5 between the substrate 11 and the target 3, without introducing oxygen gas under Ar gas atmosphere, for sputter film-forming.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种可以容易地提供膜的高透过性和低电阻率的透明导电薄膜的制造方法，并提供由其制造的透明导电薄膜。 解决方案：在制造透明导电薄膜的方法中，通过溅射法在基板11上形成透明导电薄膜。 使用ZnO掺杂的掺杂Ga 2 O 3或SB 3的掺杂的ZnO 3的靶3，掺杂了Ga 2 SB 3 O 3 / 脉冲直流电压从基板11和靶3之间的脉冲直流电源5施加，而不会在氩气气氛下引入氧气，用于溅射成膜。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008177376A

公开(公告)日：2008-07-31

申请号：JP2007009666

申请日：2007-01-19

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KAWASHIMA TOSHITAKA ,  KIRITA SHINA

IPC: H01L33/28 ,  C23C14/08 ,  H01L21/316 ,  H01L21/363 ,  H01L33/38 ,  H01L33/42

Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting device whose light emission quantity can be controlled and to provide a driving method of the device. SOLUTION: The device is provided with an n-type semiconductor layer 1, and a source electrode 4 and a drain electrode 5, which are formed on the layer 1, a p-type semiconductor layer 2, a gate electrode 3 formed below the layer 2, an AC power supply 6 applying AC voltage between the source electrode 4 and the drain electrode 5, and a DC power supply 7 applying DC voltage between the gate electrode 3 and the source electrode 4. A prescribed amount of electrons are implanted in the n-type semiconductor layer 1 by AC voltage. Electron holes are implanted from the p-type semiconductor layer in the n-type semiconductor layer by DC voltage, and the electrons and the electron holes are re-coupled. AC voltage is biased by DC voltage and is applied. A base insulating layer is formed on a substrate. The gate electrode 3, p-type semiconductor layer 2 and n-type semiconductor layer 1 are formed on the base insulating layer in this order. The n-type semiconductor layer 1 is formed of n-type zinc oxide, the p-type semiconductor layer 2 is formed of p-type zinc oxide and the base insulating layer of zinc oxide. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供可以控制发光量的发光装置，并提供该装置的驱动方法。 解决方案：该器件设置有形成在层1上的n型半导体层1，源电极4和漏电极5，p型半导体层2，形成的栅电极3 在层2之下，在源电极4和漏电极5之间施加交流电压的交流电源6和在栅电极3和源极电极4之间施加直流电压的直流电源7.规定量的电子 通过AC电压注入n型半导体层1。 通过直流电压从n型半导体层中的p型半导体层注入电子空穴，电子和电子空穴被重新耦合。 交流电压由直流电压偏置并施加。 在基板上形成基极绝缘层。 依次在基极绝缘层上形成栅电极3，p型半导体层2和n型半导体层1。 n型半导体层1由n型氧化锌形成，p型半导体层2由p型氧化锌和氧化锌的基极绝缘层形成。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006215290A

公开(公告)日：2006-08-17

申请号：JP2005028295

申请日：2005-02-03

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KIRITA SHINA ,  KAWASHIMA TOSHITAKA

IPC: G02B5/08 ,  F21V8/00 ,  F21Y103/00 ,  G02B5/26 ,  G02B5/28 ,  G02F1/13357

Abstract: PROBLEM TO BE SOLVED: To provide a reflection enhanced mirror which is free from corrosion of Ag by an oxidation process necessary to deposit a dielectric film layer and which causes no decrease in the reflectance, and to provide a backlight device for a liquid crystal display equipped with a light guide plate having the above reflection enhanced mirror.
SOLUTION: The reflection enhanced mirror has a dielectric multilayer film 36 deposited across an oxidation preventing thin film 33 on a metallic film 32.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种反射增强反射镜，其通过沉积电介质膜层所需的氧化工艺不会腐蚀Ag，并且不会降低反射率，并且提供用于液体的背光装置 配备有具有上述反射增强镜的导光板的水晶显示器。 解决方案：反射增强反射镜具有沉积在金属膜32上的防氧化薄膜33上的电介质多层膜36.（C）2006，JPO＆NCIPI

公开(公告)号：JP2005300711A

公开(公告)日：2005-10-27

申请号：JP2004113923

申请日：2004-04-08

Applicant: Sony Corp ,  ソニー株式会社

Inventor： NAKABACHI HIDEYA ,  KAKINUMA MASAYASU ,  HAYASHI HIROSHI ,  SHIMODA KAZUTO ,  KIRITA SHINA

IPC: G02B5/30 ,  G02F1/13 ,  G02F1/1335 ,  G03B21/28 ,  G03B21/62 ,  G03B21/625

Abstract: PROBLEM TO BE SOLVED: To provide a screen in which contrast is improved by comparatively surely eliminating the effect of outdoor daylight, thereby decreasing the black level of an image, and to provide a rear projector using the screen.
SOLUTION: The screen 10, on which images are displayed by the emission of image light from back, includes: a selective transmission filter 2 which has the properties of highly transmitting light of specific wavelength region which corresponds to image light, and the properties of highly reflecting the light of visible wavelength region excepting at least the specific wavelength region; and a circular polarizer plate 3 disposed in front of the selective transmission filter 2.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供通过相对地消除室外日光的影响而提高对比度的屏幕，从而降低图像的黑色电平，并且使用屏幕提供后投影仪。 解决方案：通过从背面发射图像光来显示图像的屏幕10包括：选择性透射滤光器2，其具有高度透射与图像光对应的特定波长区域的光的性质，并且 至少具有特定波长区域的高度反射可见波长区域的光的性质; 以及设置在选择性透射过滤器2前面的圆偏振片3.版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2013250500A

公开(公告)日：2013-12-12

申请号：JP2012126895

申请日：2012-06-04

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KOSHIISHI AKIRA ,  KIRITA SHINA ,  TAKAI YUICHI

IPC: G02B27/22 ,  G02B3/00 ,  G02B3/06 ,  G02B3/12 ,  G02B26/00

Abstract: PROBLEM TO BE SOLVED: To make a device operate more securely.SOLUTION: An optical element substrate includes: a first driving electrode which has a periodically rugged structure and is provided to side face of a partition wall as a projection part of the rugged structure; a second driving electrode provided on a side face opposed to the side face of the partition wall where the first driving electrode is provided while electrically insulated from the first driving electrode; a first coupling electrode provided a recessed part of the rugged structure and a part of the side face of the partition wall which comes into contact with the first driving electrode; and a second coupling electrode provided to the recessed part of the rugged structure and a part of a side face of the partition wall which comes into contact with the second driving electrode while electrically insulated from the first coupling electrode. The first driving electrode or second driving electrode is applied with a predetermined voltage through the first coupling electrode or second coupling electrode, and the driving electrodes are made of different materials from the coupling electrodes.

Abstract translation: 要解决的问题：使设备操作更安全。解决方案：一种光学元件基板，包括：第一驱动电极，其具有周期性粗糙的结构，并且设置在作为凹凸结构的突出部分的分隔壁的侧面; 第二驱动电极，设置在与所述分隔壁的与所述第一驱动电极电绝缘的所述第一驱动电极的侧面相对的侧面上; 第一耦合电极，设置凹凸结构的凹陷部分和与第一驱动电极接触的分隔壁的侧面的一部分; 以及设置在凹凸结构的凹部的第二耦合电极和与第一耦合电极电绝缘的与第二驱动电极接触的分隔壁的侧面的一部分。 第一驱动电极或第二驱动电极通过第一耦合电极或第二耦合电极施加预定电压，并且驱动电极由与耦合电极不同的材料制成。

公开(公告)号：JP2013037219A

公开(公告)日：2013-02-21

申请号：JP2011173781

申请日：2011-08-09

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KIRITA SHINA

IPC: G02B3/14 ,  G02B3/00 ,  G02B26/00 ,  G02B26/08 ,  G02B27/22

CPC classification number: G02B26/005

Abstract: PROBLEM TO BE SOLVED: To provide an optical element capable of achieving an accurate drive at a low voltage while maintaining sufficient insulating property.SOLUTION: The optical element includes: first and second electrodes disposed to oppose to each other; an insulating film, which comprises a dielectric layer, an ion barrier layer and a water repellent layer, successively layered to cover a surface of the first electrode, the surface opposing to the second electrode; and a polar liquid and a nonpolar liquid having different refractive indices from each other, which are sealed between the insulating film and the second electrode. The dielectric layer has a dielectric constant higher than that of the ion barrier layer. The ion barrier layer suppresses permeation of ions included in the polar liquid. The water repelling film is located at the uppermost layer of the insulating film and shows affinity to the nonpolar liquid.

Abstract translation: 要解决的问题：提供能够在保持足够的绝缘性的同时实现低电压的精确驱动的光学元件。 光学元件包括：彼此相对设置的第一和第二电极; 绝缘膜，其包括电介质层，离子阻挡层和防水层，依次层叠以覆盖第一电极的表面，与第二电极相对的表面; 以及密封在所述绝缘膜和所述第二电极之间的彼此具有不同折射率的极性液体和非极性液体。 电介质层的介电常数高于离子阻挡层的介电常数。 离子阻挡层抑制极性液体中包含的离子的渗透。 防水膜位于绝缘膜的最上层，对非极性液体具有亲和性。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2010153435A

公开(公告)日：2010-07-08

申请号：JP2008327332

申请日：2008-12-24

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KIRITA SHINA ,  KAWASHIMA TOSHITAKA

IPC: H01L29/786 ,  C23C14/08 ,  G02F1/1368 ,  H01L21/336

CPC classification number: H01L29/7869 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

Abstract: PROBLEM TO BE SOLVED: To provide a thin-film transistor manufacturing method that simplifies the process. SOLUTION: The thin-film transistor manufacturing method is configured as follows. An oxide semiconductor film 30 having a shape including a channel formation scheduled region 31A, a source electrode formation scheduled region 32SA, and a drain electrode formation scheduled region 32DA is formed on a gate insulating film 13 so that the whole oxide semiconductor film has the same carrier concentration as that of the channel formation scheduled region 31A. A mask 33 for suppressing heat transfer is formed on the channel formation scheduled region 31A while the oxide semiconductor film 30 is heated at a temperature of ≥100°C and ≤200°C in the atmosphere. The channel formation scheduled region 31A becomes a channel region, in which the carrier concentration before the heating is maintained, by suppressing heat transfer by the mask 33. Alternatively, regions not covered with the mask 33 on the oxide semiconductor film 30 become a source electrode region and a drain electrode region which respectively have a high carrier concentration and a low resistance by the occurrence of oxygen loss or the like due to the heating. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 解决的问题：提供简化工艺的薄膜晶体管制造方法。 解决方案：薄膜晶体管的制造方法如下构成。 在栅极绝缘膜13上形成具有沟道形成排列区域31A，源极形成排列区域32SA以及漏极形成排列区域32DA的形状的氧化物半导体膜30，使得整个氧化物半导体膜具有相同的 载流子浓度为通道形成调度区域31A的载流子浓度。 在氧化物半导体膜30在大气中以≥100℃和≤200℃的温度加热的同时，在沟道形成预定区域31A上形成用于抑制传热的掩模33。 沟道形成排列区域31A成为通过抑制掩模33的传热而保持加热前的载流子浓度的沟道区域。或者，氧化物半导体膜30上未被掩模33覆盖的区域成为源极 区域和由于加热而发生氧损失等而分别具有高载流子浓度和低电阻的漏电极区域。 版权所有（C）2010，JPO＆INPIT