Abstract:
PROBLEM TO BE SOLVED: To prevent the occurrence of color mixing and the like, and to suppress the occurrence of inconveniences, such as degradation in the image quality of a picked-up image.SOLUTION: A pixel isolation portion PB is formed from a compound semiconductor subjected to doping concentration control or composition control in such a way as to become a potential barrier between chalcopyrite photoelectric conversion films 13 formed corresponding to a plurality of pixels P.
Abstract:
PROBLEM TO BE SOLVED: To provide a solid-state imaging device which includes an on-chip filter and can establish a high response to a low-level light. SOLUTION: The solid-state imaging device includes a curved on-chip filter 10 which is provided above a silicon substrate 1 and is formed by stacking a plurality of material layers 10A and 10B with different refractive indices in color pixels (R, G, B pixels), and an optical waveguide 11 which is provided adjacent to the on-chip filter 10 of the color pixels (R, G, B pixels) in an entire region pixel (A pixel) for detecting a visible light region and an infrared region and has an embedded material with a different refractive index from those of the plurality of materials of the on-chip filter 10. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To solve the problem caused by a thick optical lens constituted integrally with a solid state imaging apparatus. SOLUTION: An optical member is provided with an alternate arrangement layer 2 relatively thin compared with an optical length (a lens length) and having high refractive index layers 21 with a large refractive index and low refractive index layers 20 with a small refractive index alternately arranged in a horizontal direction with respect to an optical axis. Each width of the high refractive index layer 21 and low refractive index layer 20 is made equal to or smaller than the wavelength order of incident light. The respective refractive index layers are arranged symmetry so that the high refractive index layers 21 are arranged dense at the mechanical center of the alternate arrangement layer 2A and coarse as they are separated from the center and that the low refractive index layers 20 are arranged coarse at the mechanical center of the alternate arrangement layer 2A and dense as they are separated from the center, thus forming a convex lens. The alternate arrangement layer 2A can be made shorter than the optical length and thinner than a refraction type lens structure using Snell's law. The problem in a conventional lens of relatively thick structure can thereby be relieved or eliminated. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To acquire a color image and an infrared image by a single image sensor independently and simultaneously in an imaging apparatus. SOLUTION: A solid state imaging apparatus forms a laminate film 1 having a structure in which a wiring layer forming a signal line for reading a pixel signal from an amplifier in a pixel is formed on a semiconductor element on which a photo diode, the amplifier in the pixel and so on are formed, and a plurality of layers different in refractive index between adjacent layers and having a predetermined thickness are laminated on the wiring layer to reflect infrared light IR and allow visible light VL to pass through. It cuts or does not cut the infrared light for each of a plurality pixels constituting a unit pixel matrix 12. It forms color filters 14R, 14G and 14B for color imaging are formed corresponding to color pixels 12R, 12G and 12B on the laminate film 1. It obtains the color image based on pixel signals from the pixels 12R, 12G and 12B in which the laminate film 1 is formed. It obtains the infrared image based on the pixel signal from a pixel 12IR in which the laminate film 1 is not formed. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To acquire a signal linearly or with high S/N without narrowing a saturation level with a general low illumination, and to enlarge a dynamic range while an excellent S/N is obtained in a linear area for an incident radiation equal to or more than a general saturation level. SOLUTION: A solid-state imaging device is a CMOS image sensor 10 where a unit pixel 20 including a photo diode 21 and a transfer transistor 22 which transfers a signal charge to which photoelectric conversion is performed by the photo diode 21, is two-dimensionally arranged in a matrix form. A supply voltage control circuit 13 sequentially supplies plural control voltages to a control electrode of the transfer transistor 22, and then a driving of reading out signal charges transferred by the transfer transistor 22 equal to or more than twice, is performed by a vertical scanning circuit 12. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for fabricating a large-area film without any streaked structure or any fleck and for increasing production speed of the film, and to provide a film structure to be fabricated with the method. SOLUTION: In the method for fabricating the film, a uniform film is formed by cementing film fabrication base materials together, applying a film material solution thereto to prevent nonuniform drying produced by adhering of unnecessary liquid drops of the film material solution, and pulling up the base materials with the applied film material with definite speed. Even if the pulling up speed is increased, the film without any fleck is fabricated because by cementing together of the base materials, liquid drops adhered to surfaces other than the film material adhesion portion 10, particularly those adhered to the rear side surface of the film material adhesion portion 10, are eliminated. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method of forming a particulate film enabling formation of a particulate film in a more uniformly oriented state. SOLUTION: The method comprises forming a particulate film consisting of particulate assembled in a self-organizing way, on a substrate. In the method, a substrate 1 is immersed in a particulate dispersion 13 dispersed with particulate in a dispersing medium. The concentration of particulate is higher than 5 wt.%, preferably 10 wt.% or higher. A liquid film 15 of the particulate dispersion 13 is formed on the surface of the substrate 1 by pulling up the substrate 1 from the particulate dispersion 13 into a gas phase at a pulling-up rate of 0.1-10 mm/sec. The dispersion medium is evaporated from the liquid film. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To obtain a greater focusing effect. SOLUTION: When image information is supplied from the outside of a wave front control type display device 1, a three-dimensional image display control part 11 extracts two-dimensional image information from the above supplied image information in a signal separation part 21, drives a two-dimensional image display part 12 by using the two-dimensional image information, in a two-dimensional image display part driving circuit 23, and displays a two-dimensional image. At this time, the three-dimensional image display control part 11 extracts depth information from the input image information in the signal separation part 21, drives a wave front control part 13 by using the depth information, in a wave front control part driving circuit 22, and three-dimensionally displays the two-dimensional image displayed by the two-dimensional image display part 12. The display device, a display control method and a program can be applied for a stereoscopic image display device. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To make a contrast ratio higher than before by increasing only a reflection factor of white display nearly without increasing a reflection factor of black display by optimizing refractive indexes or thicknesses of respective layers. SOLUTION: A back-side substrate 10 has its refractive index made lower than the refractive index no of liquid crystal molecules 33. A display-side substrate 20, on the other hand, has its refractive index made equal to or higher than the refractive index no of liquid crystal molecules 33. More preferably, the refractive index of the display-side substrate 20 is equal to or higher than a mean refractive index n LC of the whole liquid crystal layer 30 in a scatter state (white display state). Thus, the refractive indexes are optimized to increase only the reflection factor of white display nearly without increasing the reflection factor of black display, thereby making the contrast ratio higher than before. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a light diffusion plate which is very easily manufactured and has a remarkably increased diffusion efficiency. SOLUTION: The light diffusion plate 10 is composed by providing a lot of recessed parts 11a, 11b, 11c and 11d or the like formed of a part of the inner face of a substantially spherical body on the light emitting side of a prescribed base material composed of a prescribed transparent film or the like. In the light diffusion plate 10, on which a lot of recessed parts 11a, 11b, 11c and 11d or the like are formed on the light emitting side, the incident light which is made incident on the peripheral part rather than a critical angle at an recessed part is not totally reflected but emits through adjacent recessed parts. COPYRIGHT: (C)2006,JPO&NCIPI