公开(公告)号：JP2012169652A

公开(公告)日：2012-09-06

申请号：JP2012092941

申请日：2012-04-16

Applicant: Spp Technologies Co Ltd ,  Sppテクノロジーズ株式会社

Inventor： YAMAMOTO TAKASHI ,  NOZAWA YOSHIYUKI

IPC: H01L21/3065 ,  H05H1/46

Abstract: PROBLEM TO BE SOLVED: To provide a plasma etching method by which an entirely uniform surface etching can be performed even on a large-size substrate, and no deterioration is caused in etching form.SOLUTION: The plasma etching method comprises: a plasma generation step which includes producing an induced electric field in a plasma generation space 9, and supplying a process gas to the plasma generation space 9 to generate plasma thereof; and a plasma-density control step which includes positioning the upper end of a funnel-shaped plasma-density control member 20 composed of a grounded conductive material, opening at its upper and lower ends, and having a smaller inner diameter at the lower end in comparison to the inner diameters at the upper end and at its trunk part defining the plasma generation space 9 on the inner wall of a chamber 2 between the plasma generation space 9 and a base 10, and which includes causing the plasma generated in the plasma generation space 9 to pass through the opening of the plasma-density control member 20 thereby leading the plasma to a substrate K put on the base 10 while controlling the areal density thereof.

Abstract translation: 要解决的问题：为了提供等离子体蚀刻方法，即使在大尺寸基板上也能进行​​完全均匀的表面蚀刻，并且不会导致蚀刻形式的劣化。 等离子体蚀刻方法包括：等离子体产生步骤，其包括在等离子体产生空间9中产生感应电场，并将处理气体供应到等离子体产生空间9以产生其等离子体; 和等离子体密度控制步骤，其包括将由接地导电材料构成的漏斗形等离子体密度控制构件20的上端定位在其上端和下端开口，并且在下端具有较小内径 与在等离子体产生空间9和基座10之间的腔室2的内壁上限定等离子体产生空间9的上端和其主干部分的内径进行比较，其包括使等离子体产生的等离子体产生 空间9通过等离子体密度控制构件20的开口，从而将等离子体引导到放置在基座10上的基板K，同时控制其面密度。 版权所有（C）2012，JPO＆INPIT