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公开(公告)号：US11035739B2
公开(公告)日：2021-06-15
申请号：US16921819
申请日：2020-07-06
Applicant: STMicroelectronics S.r.l.
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno
Abstract: A method of sensing a temperature includes providing a voltage to reverse bias a PN junction of a junction diode. The PN junction has a junction capacitance. The method includes providing a reverse bias voltage change across the PN junction and detecting a value of the junction capacitance in response to the reverse bias voltage change. The value of the junction capacitance is a function of a temperature of the PN junction. An output signal is generated based on the detected junction capacitance, where the output signal indicates a temperature of an environment containing the junction diode.
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公开(公告)号：US20190250047A1
公开(公告)日：2019-08-15
申请号：US16394804
申请日：2019-04-25
Applicant: STMicroelectronics S.r.l.
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno
Abstract: A method of sensing a temperature includes providing a voltage to reverse bias a PN junction of a junction diode. The PN junction has a junction capacitance. The method includes providing a reverse bias voltage change across the PN junction and detecting a value of the junction capacitance in response to the reverse bias voltage change. The value of the junction capacitance is a function of a temperature of the PN junction. An output signal is generated based on the detected junction capacitance, where the output signal indicates a temperature of an environment containing the junction diode.
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公开(公告)号：US20180074000A1
公开(公告)日：2018-03-15
申请号：US15808408
申请日：2017-11-09
Applicant: STMicroelectronics S.r.l.
Inventor： Pasquale Biancolillo , Angelo Recchia , Pasquale Franco , Antonio Cicero , Giuseppe Bruno
CPC classification number: G01N27/18 , B81B7/02 , B81B7/04 , B81B2201/02 , B81B2201/0278 , G01N30/66 , G01N33/0027
Abstract: A semiconductor gas sensor device includes a first cavity that is enclosed by opposing first and second semiconductor substrate slices. At least one conducting filament is provided to extend over the first cavity, and a passageway is provided to permit gas to enter the first cavity. The sensor device may further including a second cavity that is hermetically enclosed by the opposing first and second semiconductor substrate slices. At least one another conducting filament is provided to extend over the second cavity.
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公开(公告)号：US20150377813A1
公开(公告)日：2015-12-31
申请号：US14725842
申请日：2015-05-29
Applicant: STMicroelectronics S.r.l.
Inventor： Pasquale Biancolillo , Angelo Recchia , Pasquale Franco , Antonio Cicero , Giuseppe Bruno
CPC classification number: G01N27/18 , B81B7/02 , B81B7/04 , B81B2201/02 , B81B2201/0278 , G01N30/66 , G01N33/0027
Abstract: A semiconductor gas sensor device includes a first cavity that is enclosed by opposing first and second semiconductor substrate slices. At least one conducting filament is provided to extend over the first cavity, and a passageway is provided to permit gas to enter the first cavity. The sensor device may further including a second cavity that is hermetically enclosed by the opposing first and second semiconductor substrate slices. At least one another conducting filament is provided to extend over the second cavity.
Abstract translation: 半导体气体传感器装置包括由相对的第一和第二半导体衬底切片包围的第一腔体。 提供至少一个导电细丝以在第一腔上延伸，并且设置通道以允许气体进入第一腔。 传感器装置还可以包括被相对的第一和第二半导体衬底切片气密地包围的第二腔体。 提供至少另一个导电细丝以在第二腔上延伸。
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公开(公告)号：US10739212B2
公开(公告)日：2020-08-11
申请号：US16394804
申请日：2019-04-25
Applicant: STMicroelectronics S.r.l.
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno
Abstract: A method of sensing a temperature includes providing a voltage to reverse bias a PN junction of a junction diode. The PN junction has a junction capacitance. The method includes providing a reverse bias voltage change across the PN junction and detecting a value of the junction capacitance in response to the reverse bias voltage change. The value of the junction capacitance is a function of a temperature of the PN junction. An output signal is generated based on the detected junction capacitance, where the output signal indicates a temperature of an environment containing the junction diode.
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Patent Agency Ranking
公开(公告)号：US10660540B2
公开(公告)日：2020-05-26
申请号：US15665903
申请日：2017-08-01
Applicant: STMicroelectronics S.r.l.
Inventor： Pasquale Biancolillo , Stefano Rossi , Angelo Recchia , Giuseppe Bruno
Abstract: A device for measuring an electrical impedance of biologic tissue may include electrodes configured to contact the biologic tissue and generate a differential voltage thereon. The device may include a first circuit coupled to the electrodes and configured to force an oscillating input signal therethrough, and a differential amplitude modulation (AM) demodulator coupled to the plurality of electrodes. The differential AM demodulator may be configured to demodulate the differential voltage, and generate a base-band signal representative of the demodulated differential voltage. The device may further include an output circuit downstream from the differential AM demodulator and may be configured to generate an output signal representative of the electrical impedance as a function of the base-band signal.
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公开(公告)号：US10451575B2
公开(公告)日：2019-10-22
申请号：US15797078
申请日：2017-10-30
Applicant: STMicroelectronics S.r.l.
Inventor： Pasquale Biancolillo , Angelo Recchia , Pasquale Franco , Antonio Cicero , Giuseppe Bruno
Abstract: A gas measurement device measures gas using a gas sensor including a sense resistance exposed to the gas and a reference resistance not exposed to the gas. The gas measurement device applies a first current value and a second current value to the sensor. A detector functions to detect a first resistance variation and a second resistance variation of the sense resistance exposed to the gas with respect to the reference resistance as a function of the first current value and the second current value, respectively. The resistance variation dependent on relative humidity is then determined as a function of the first and second resistance variations and a first constant. The resistance variation dependent on gas content is then determined as a function of the first and second resistance variations and a second (different) constant.
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公开(公告)号：US10180406B2
公开(公告)日：2019-01-15
申请号：US15808408
申请日：2017-11-09
Applicant: STMicroelectronics S.r.l.
Inventor： Pasquale Biancolillo , Angelo Recchia , Pasquale Franco , Antonio Cicero , Giuseppe Bruno
Abstract: A semiconductor gas sensor device includes a first cavity that is enclosed by opposing first and second semiconductor substrate slices. At least one conducting filament is provided to extend over the first cavity, and a passageway is provided to permit gas to enter the first cavity. The sensor device may further including a second cavity that is hermetically enclosed by the opposing first and second semiconductor substrate slices. At least one another conducting filament is provided to extend over the second cavity.
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公开(公告)号：US20180052129A1
公开(公告)日：2018-02-22
申请号：US15797078
申请日：2017-10-30
Applicant: STMicroelectronics S.r.l.
Inventor： Pasquale Biancolillo , Angelo Recchia , Pasquale Franco , Antonio Cicero , Giuseppe Bruno
CPC classification number: G01N27/121 , G01N27/18
Abstract: A gas measurement device measures gas using a gas sensor including a sense resistance exposed to the gas and a reference resistance not exposed to the gas. The gas measurement device applies a first current value and a second current value to the sensor. A detector functions to detect a first resistance variation and a second resistance variation of the sense resistance exposed to the gas with respect to the reference resistance as a function of the first current value and the second current value, respectively. The resistance variation dependent on relative humidity is then determined as a function of the first and second resistance variations and a first constant. The resistance variation dependent on gas content is then determined as a function of the first and second resistance variations and a second (different) constant.
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20.发明授权Integrated device of a capacitive type for detecting humidity, in particular manufactured using a CMOS technology 有权用于检测湿度的电容式集成装置，特别是使用CMOS技术制造的公开(公告)号：US09234859B2
公开(公告)日：2016-01-12
申请号：US14226554
申请日：2014-03-26
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno , Rosario Cariola , Benoit Gautheron
CPC classification number: G01N27/225 , H01L28/40
Abstract: An integrated capacitive-type humidity sensor formed in a semiconductor chip integrating a sensing capacitor and a reference capacitor. Each of the sensing and reference capacitors have at least a first electrode and at least a second electrode, the first and second electrodes of each of the sensing and reference capacitors being arranged at distance and mutually insulated. A hygroscopic layer extends on the sensing and reference capacitors and a conductive shielding region extends on the reference capacitor but not on the sensing capacitor.
Abstract translation: 集成电容型湿度传感器，形成在集成感测电容器和参考电容器的半导体芯片中。 感测和参考电容器中的每一个具有至少第一电极和至少第二电极，每个感测和参考电容器的第一和第二电极被布置成距离并相互绝缘。 吸湿层在感测和参考电容器上延伸，导电屏蔽区域在参考电容器上延伸，但不在感测电容器上。
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