公开(公告)号：EP1391932A1

公开(公告)日：2004-02-25

申请号：EP02255864.7

申请日：2002-08-22

Applicant: STMicroelectronics Limited

Inventor： Raynor, Jeff

IPC: H01L27/146 ,  H04N3/15

CPC classification number: H01L27/14609 ,  H04N5/37455

Abstract: An active pixel image sensor is formed on a P-epitaxial layer (10) on top of a P substrate (12). Each pixel consists of an N-well (14) acting as a collection node and a number of transistors. The pixel transistors comprise only NMOS transistors formed in P-wells 16. Circuits are described in which the in-pixel transistors cooperate with off-pixel PMOS transistors to form ADC circuits.

Abstract translation: 在P基板（12）的顶部上的P外延层（10）上形成有源像素图像传感器。 每个像素由用作收集节点的N阱（14）和多个晶体管组成。 像素晶体管仅包括形成在P阱16中的NMOS晶体管。描述了像素内晶体管与非像素PMOS晶体管配合以形成ADC电路的电路。