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公开(公告)号：US20180074000A1
公开(公告)日：2018-03-15
申请号：US15808408
申请日：2017-11-09
Applicant: STMicroelectronics S.r.l.
Inventor： Pasquale Biancolillo , Angelo Recchia , Pasquale Franco , Antonio Cicero , Giuseppe Bruno
CPC classification number: G01N27/18 , B81B7/02 , B81B7/04 , B81B2201/02 , B81B2201/0278 , G01N30/66 , G01N33/0027
Abstract: A semiconductor gas sensor device includes a first cavity that is enclosed by opposing first and second semiconductor substrate slices. At least one conducting filament is provided to extend over the first cavity, and a passageway is provided to permit gas to enter the first cavity. The sensor device may further including a second cavity that is hermetically enclosed by the opposing first and second semiconductor substrate slices. At least one another conducting filament is provided to extend over the second cavity.
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公开(公告)号：US20150377813A1
公开(公告)日：2015-12-31
申请号：US14725842
申请日：2015-05-29
Applicant: STMicroelectronics S.r.l.
Inventor： Pasquale Biancolillo , Angelo Recchia , Pasquale Franco , Antonio Cicero , Giuseppe Bruno
CPC classification number: G01N27/18 , B81B7/02 , B81B7/04 , B81B2201/02 , B81B2201/0278 , G01N30/66 , G01N33/0027
Abstract: A semiconductor gas sensor device includes a first cavity that is enclosed by opposing first and second semiconductor substrate slices. At least one conducting filament is provided to extend over the first cavity, and a passageway is provided to permit gas to enter the first cavity. The sensor device may further including a second cavity that is hermetically enclosed by the opposing first and second semiconductor substrate slices. At least one another conducting filament is provided to extend over the second cavity.
Abstract translation: 半导体气体传感器装置包括由相对的第一和第二半导体衬底切片包围的第一腔体。 提供至少一个导电细丝以在第一腔上延伸，并且设置通道以允许气体进入第一腔。 传感器装置还可以包括被相对的第一和第二半导体衬底切片气密地包围的第二腔体。 提供至少另一个导电细丝以在第二腔上延伸。
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公开(公告)号：US11652458B2
公开(公告)日：2023-05-16
申请号：US17372262
申请日：2021-07-09
Applicant: STMicroelectronics S.r.l.
Inventor： Calogero Marco Ippolito , Michele Vaiana , Angelo Recchia
CPC classification number: H03F3/45183 , G05F3/245 , G06G7/186 , H03B5/24 , H03F3/393 , H03F3/4565 , H03F3/45475 , H03F3/45654 , H03F3/45753 , H03F2200/171
Abstract: A thermally-isolated-metal-oxide-semiconducting (TMOS) sensor has inputs coupled to first and second nodes to receive first and second bias currents, and an output coupled to a third node. A tail has a first conduction terminal coupled to the third node and a second conduction terminal coupled to a reference voltage. A control circuit applies a control signal to a control terminal of the tail transistor based upon voltages at the first and second nodes so that a common mode voltage at the first and second nodes is equal to a reference common mode voltage. A differential current integrator has a first input terminal coupled to the second node and a second input terminal coupled to the first node, and provides an output voltage indicative of an integral of a difference between a first output current at the first input terminal and a second output current at the second input terminal.
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Patent Agency Ranking
公开(公告)号：US20210336593A1
公开(公告)日：2021-10-28
申请号：US17372262
申请日：2021-07-09
Applicant: STMicroelectronics S.r.l.
Inventor： Calogero Marco Ippolito , Michele Vaiana , Angelo Recchia
Abstract: A thermally-isolated-metal-oxide-semiconducting (TMOS) sensor has inputs coupled to first and second nodes to receive first and second bias currents, and an output coupled to a third node. A tail has a first conduction terminal coupled to the third node and a second conduction terminal coupled to a reference voltage. A control circuit applies a control signal to a control terminal of the tail transistor based upon voltages at the first and second nodes so that a common mode voltage at the first and second nodes is equal to a reference common mode voltage. A differential current integrator has a first input terminal coupled to the second node and a second input terminal coupled to the first node, and provides an output voltage indicative of an integral of a difference between a first output current at the first input terminal and a second output current at the second input terminal.
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公开(公告)号：US11095261B2
公开(公告)日：2021-08-17
申请号：US16781493
申请日：2020-02-04
Applicant: STMicroelectronics S.r.l.
Inventor： Calogero Marco Ippolito , Michele Vaiana , Angelo Recchia
Abstract: An amplification interface includes a drain of a first FET connected to a first node, a drain of a second FET connected to a second node, and sources of the first and second FETs connected to a third node. First and second bias-current generators are connected to the first and second nodes. A third FET is connected between the third node and a reference voltage. A regulation circuit drives the gate of the third FET to regulate the common mode of the voltage at the first node and the voltage at the second node to a desired value. A current generator applies a correction current to the first and/or second node. A differential current integrator has a first and second inputs connected to the second and first nodes. The integrator supplies a voltage representing the integral of the difference between the currents received at the second and first inputs.
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公开(公告)号：US20200050305A1
公开(公告)日：2020-02-13
申请号：US16523302
申请日：2019-07-26
Applicant: STMicroelectronics S.r.l.
Inventor： Calogero Marco Ippolito , Angelo Recchia , Antonio Cicero , Pierpaolo Lombardo , Michele Vaiana
Abstract: A touchscreen resistive sensor includes a network of resistive sensor branches coupled to a number of sensor nodes arranged at touch locations of the touchscreen. A test sequence is performed by sequentially applying to each sensor node a reference voltage level, jointly coupling to a common line the other nodes, sensing a voltage value at the common line, and declaring a short circuit condition as a result of the voltage value sensed at the common line reaching a short circuit threshold. A current value level flowing at the sensor node to which the reference voltage level is applied is sensed and a malfunction of the resistive sensor branch coupled with the sensor node to which a reference voltage level is applied is generated as a result of the current value sensed at the sensor node reaching an upper threshold or lower threshold.
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公开(公告)号：US20170354345A1
公开(公告)日：2017-12-14
申请号：US15665903
申请日：2017-08-01
Applicant: STMicroelectronics S.r.l.
Inventor： Pasquale Biancolillo , Stefano Rossi , Angelo Recchia , Giuseppe Bruno
CPC classification number: A61B5/0535 , A61B5/6804 , G01N27/028
Abstract: A device for measuring an electrical impedance of biologic tissue may include electrodes configured to contact the biologic tissue and generate a differential voltage thereon. The device may include a first circuit coupled to the electrodes and configured to force an oscillating input signal therethrough, and a differential amplitude modulation (AM) demodulator coupled to the plurality of electrodes. The differential AM demodulator may be configured to demodulate the differential voltage, and generate a base-band signal representative of the demodulated differential voltage. The device may further include an output circuit downstream from the differential AM demodulator and may be configured to generate an output signal representative of the electrical impedance as a function of the base-band signal.
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公开(公告)号：US09835574B2
公开(公告)日：2017-12-05
申请号：US14726823
申请日：2015-06-01
Applicant: STMicroelectronics S.r.l.
Inventor： Pasquale Biancolillo , Angelo Recchia , Pasquale Franco , Antonio Cicero , Giuseppe Bruno
CPC classification number: G01N27/121 , G01N27/18
Abstract: A gas measurement device measures gas using a gas sensor including a sense resistance exposed to the gas and a reference resistance not exposed to the gas. The gas measurement device applies a first current value and a second current value to the sensor. A detector functions to detect a first resistance variation and a second resistance variation of the sense resistance exposed to the gas with respect to the reference resistance as a function of the first current value and the second current value, respectively. The resistance variation dependent on relative humidity is then determined as a function of the first and second resistance variations and a first constant. The resistance variation dependent on gas content is then determined as a function of the first and second resistance variations and a second (different) constant.
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