-
11.
公开(公告)号:US20220209134A1
公开(公告)日:2022-06-30
申请号:US17565726
申请日:2021-12-30
Inventor: Yeong Suk CHOI , Soo Young PARK , Sung Young YUN , Hyeong-Ju KIM , Min-Woo CHOI , Su-Yeon KIM , Jin Hong KIM , Seyoung JUNG
IPC: H01L51/00 , C07D471/04
Abstract: Disclosed are a film and a photoelectric device including the compound of Chemical Formula 1 and configured to selectively absorb light in a blue wavelength region, and an image sensor and electronic device including the same: In Chemical Formula 1, each substituent is the same as defined in the detailed description.
-
公开(公告)号:US20200152888A1
公开(公告)日:2020-05-14
申请号:US16526230
申请日:2019-07-30
Inventor: Yeong Suk Choi , Soo Young PARK , Sung Young YUN , Min-Woo CHOI , Ji Eon KWON , Hyeong-Ju KIM
IPC: H01L51/00 , C07D471/04 , H01L27/30 , H01L51/44
Abstract: Disclosed are an organic device including a first electrode and a second electrode facing each other and an active layer between the first electrode and the second electrode, wherein the active layer includes compound represented by Chemical Formula 1, and an image sensor including the same. In Chemical Formula 1, L1, L2, R1, R2, Ar1, Ar2, X1, X2, m1, m2, n1, and n2 are the same as described in the detailed description.
-
13.
公开(公告)号:US20240321914A1
公开(公告)日:2024-09-26
申请号:US18587280
申请日:2024-02-26
Applicant: Samsung Electronics Co., Ltd.
Inventor: Tae Jin CHOI , Hyeong-Ju KIM , Daiki MINAMI , Kyung Bae PARK , Jeong Il PARK , Hiromasa SHIBUYA , Jeoung In YI , Younhee LIM , Hyerim HONG
IPC: H01L27/146 , C07D409/14 , C07D421/14 , C07D491/048 , C07D491/16 , C07D495/04 , C07D495/16 , C07D517/04 , C07D517/16 , C07F7/08 , H10K59/65
CPC classification number: H01L27/14623 , C07D409/14 , C07D421/14 , C07D491/048 , C07D491/16 , C07D495/04 , C07D495/16 , C07D517/04 , C07D517/16 , C07F7/0816 , H10K59/65
Abstract: Provided is a compound represented by any one of Chemical Formulas 1 to 3, and having a molecular packing density of greater than or equal to about 1.55 molecules/nm3 and photoelectric devices, light absorption sensors, sensor-embedded display panels, and electronic devices including the same.
In Chemical Formulas 1 to 3, the definition of each substituent is as described in the specification.-
14.
公开(公告)号:US20240244965A1
公开(公告)日:2024-07-18
申请号:US18543512
申请日:2023-12-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Tae Jin CHOI , Hyeong-Ju KIM , Feifei FANG , Sungyoung YUN , Jeoung In YI , Younhee LIM , Juhyung LIM , Hyerim HONG , Daiki MINAMI , Kyung Bae PARK
IPC: H10K85/60 , C07D487/06 , C07D495/04 , C07F7/08 , H10K85/40
CPC classification number: H10K85/657 , C07D487/06 , C07D495/04 , C07F7/0816 , H10K85/40 , H10K85/6572 , H10K85/6576 , H10K30/30
Abstract: Provided are a compound represented by Chemical Formula 1A or 1B and a photoelectric device, a light absorption sensor, a sensor-embedded display panel, and an electronic device including the same.
Details for Chemical Formulas 1A and 1B are as described in the detailed description.-
公开(公告)号:US20240196635A1
公开(公告)日:2024-06-13
申请号:US18459942
申请日:2023-09-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Feifei FANG , Sungyoung YUN , Chul Joon HEO , Hyeong-Ju KIM , Kyung Bae PARK , Hwijoung SEO , Tae Jin CHOI
CPC classification number: H10K39/34 , G06V40/1318 , H10K59/353 , H10K2101/40
Abstract: A sensor-embedded display panel includes a light emitting element and a sensor which include separate portions of a first common auxiliary layer including a hole transport material and a second common auxiliary layer including an electron transport material. The sensor includes first and second semiconductor layers proximate to the first and second common auxiliary layers, respectively, and including a p-type semiconductor and a non-fullerene n-type semiconductor having a LUMO energy level deeper than that of the electron transport material, respectively. An insertion layer between the second semiconductor layer and the second common auxiliary layer includes a metal, a metal compound, or any combination thereof. A work function of the metal or a LUMO energy level of the metal compound is deeper or shallower than the LUMO energy level of the non-fullerene n-type semiconductor and the LUMO energy level of the electron transport material within less than about 1.3 eV, respectively.
-
公开(公告)号:US20240159587A1
公开(公告)日:2024-05-16
申请号:US18456001
申请日:2023-08-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Chul Joon HEO , Hwijoung SEO , Sungyoung YUN , Hyeong-Ju KIM , Kyung Bae PARK , Feifei FANG , Younhee LIM , Tae Jin CHOI
CPC classification number: G01J1/44 , H10K39/34 , G01J2001/446 , G01J2001/448
Abstract: A sensor may include a reflective electrode, a photoelectric conversion layer on the reflective electrode and including one or more photoelectric conversion materials, a semi-transmissive electrode on the photoelectric conversion layer, a light transmitting buffer layer on the semi-transmissive electrode, and a semi-transmissive auxiliary layer on the light transmitting buffer layer.
-
公开(公告)号:US20210143338A1
公开(公告)日:2021-05-13
申请号:US17092399
申请日:2020-11-09
Inventor: Yeong Suk CHOI , Soo Young PARK , Sung Young YUN , Hyeong-Ju KIM , Seyoung JUNG , Dong Joo MIN , Ji Eon KWON
IPC: H01L51/00 , C07C255/35 , C07D487/14 , C07D213/57 , C07D401/14
Abstract: Disclosed are an n-type semiconductor including compound represented by Chemical Formula 1 or Chemical Formula 2, an image sensor, and an electronic device. In Chemical Formula 1 and Chemical Formula 2, each substituent is as defined in the detailed description.
-
-
-
-
-
-