公开(公告)号：US20230102201A1

公开(公告)日：2023-03-30

申请号：US17874475

申请日：2022-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Vladimir Vsevolodovich PROTOPOPOV ,  Vasily Grigorievich PASHKOVSKIY ,  Chansoo KANG ,  Youngdo KIM ,  Hoonseop KIM ,  Sangki NAM ,  Sejin OH ,  Changsoon LIM

IPC: H01J37/32

Abstract: A device for measuring a density of plasma is provided. The device includes a first sensor configured to measure a microwave spectrum of an input port reflection parameter of plasma, the first sensor having a probe including a conductive material and a flat plate shape, and a second sensor configured to measure an optical signal generated from the plasma, the second sensor being configured to detect the optical signal through the probe of the first sensor.

公开(公告)号：US20240159657A1

公开(公告)日：2024-05-16

申请号：US18202663

申请日：2023-05-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejin OH ,  Sunggil KANG ,  Sangki NAM ,  Jeongmin BANG ,  Dougyong SUNG ,  Yeongkwang LEE ,  Sungho JANG ,  Jonghun PI

IPC: G01N21/25 ,  G01N21/31 ,  H01L21/67

CPC classification number: G01N21/255 ,  G01N21/3103 ,  H01L21/67069 ,  G01N2201/061 ,  G01N2201/062

Abstract: Provided is an apparatus configured to measure radical spatial density distribution including a process chamber including a viewport, a driving device configured to move a moving wall inside the process chamber, a light source configured to generate light, a collimator disposed in the viewport of the process chamber and configured to transmit light received from the light source to the moving wall and receive light reflected from the moving wall, and a spectrometer configured to receive the reflected light from the collimator, and measure radical spatial density based on analyzing an absorption amount of a spectrum of the received light.

公开(公告)号：US20230123891A1

公开(公告)日：2023-04-20

申请号：US18085949

申请日：2022-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byungjo KIM ,  Sangki NAM ,  Jungmin KO ,  Kwonsang SEO ,  Seungbo SHIM ,  Younghyun JO

IPC: H01J37/32

Abstract: An upper electrode used for a substrate processing apparatus using plasma is provided. The upper electrode includes a bottom surface including a center region and an edge region having a ring shape and surrounding the center region, a first protrusion portion protruding toward plasma from the edge region and having a ring shape, wherein the first protrusion portion includes a first apex corresponding to a radial local maximum point toward the plasma, and a first distance, which is a radial-direction distance between the first apex and a center axis of the upper electrode, is greater than a radius of a substrate.

公开(公告)号：US20220308339A1

公开(公告)日：2022-09-29

申请号：US17508224

申请日：2021-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changsoon LIM ,  Youngdo KIM ,  Daewon KANG ,  Chansoo KANG ,  Hoonseop KIM ,  Sangki NAM ,  Youngduk SUH ,  Donghyub LEE ,  Jonghun PI

IPC: G02B27/00 ,  G06T7/00 ,  B08B7/04 ,  B08B7/00 ,  G03F7/20 ,  G01N33/00

Abstract: A method of cleaning a collector of an extreme ultraviolet light source system includes introducing the collector separated from the extreme ultraviolet light source system into a chamber; capturing an optical image of a reflective surface of the collector; measuring a contamination level of the reflective surface by comparing the optical image with a prestored standard image; performing a first cleaning operation if the contamination level exceeds a preset first reference value, the first cleaning operation including cleaning the reflective surface by spraying dry ice particles onto the reflective surface; and performing a second cleaning operation if the contamination level is less than or equal to the preset first reference value. The second cleaning operation includes cleaning the reflective surface by radiating atmospheric plasma onto the reflective surface and measuring a microcontamination level and a damage level of the reflective surface.

公开(公告)号：US20220262599A1

公开(公告)日：2022-08-18

申请号：US17470337

申请日：2021-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunbae KIM ,  Hyunjae LEE ,  Youngdo KIM ,  Hyejin KIM ,  Sangki NAM ,  Chanhee PARK ,  Minho JUNG

IPC: H01J37/32

Abstract: A variable frequency and non-sinusoidal power generator includes a pulse module circuit, a slope module circuit, and first and second cooling systems. The pulse module circuit and the slope module circuit includes control switches, and generates at least one of a output currents and a output voltages by selectively turning on/off the control switches based on control signals. The first and second cooling systems are disposed at first and second sides of the control switches. A bias power having a variable frequency and a non-sinusoidal waveform is generated based on the control signals, at least one of the output currents and the output voltages.

公开(公告)号：US20220139714A1

公开(公告)日：2022-05-05

申请号：US17319503

申请日：2021-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changheon LEE ,  Sangki NAM ,  Taesun SHIN

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32

Abstract: A substrate processing method includes inserting a substrate from an outside into a processing space, supplying a process gas from a gas supply unit to the processing space, producing plasma based on the process gas, performing an etching process for the substrate using ions included in the plasma, and discharging a processed gas produced in the etching process through a discharge part. The discharge part includes a first slit extending through a flange part, and a second slit connected to the first slit while extending through a side wall part connected to the flange part. A vertical length of the first slit is equal to a vertical length of the second slit. A horizontal length of the first slit is about 5 times to about 7 times the vertical length of the first slit.