IMAGE SENSORS AND ELECTRONIC DEVICES
    13.
    发明公开

    公开(公告)号:US20240138166A1

    公开(公告)日:2024-04-25

    申请号:US18475796

    申请日:2023-09-27

    CPC classification number: H10K39/32

    Abstract: An image sensor includes a semiconductor substrate in which a plurality of photo-sensing elements are integrated, an organic active layer on the semiconductor substrate, an interlayer between the organic active layer and the semiconductor substrate, and optionally a color filter layer on the organic active layer. The organic active layer includes a singlet fission material. The interlayer includes a dielectric selected from an oxide, a nitride, oxynitride, fluoride, oxyfluoride, and any combination thereof.

    SENSOR EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE

    公开(公告)号:US20240008351A1

    公开(公告)日:2024-01-04

    申请号:US18065152

    申请日:2022-12-13

    Abstract: Disclosed are a sensor-embedded display panel and an electronic device including the sensor-embedded display panel. The sensor-embedded panel may include a light emitting element and a photosensor on a substrate. The light emitting element may include a light emitting layer and the photosensor may include a photosensitive layer in parallel with the light emitting layer along an in-plane direction of the substrate. The light emitting element and the photosensor include respective portions of a first common auxiliary layer. The first common auxiliary layer may be continuous along the in-place direction of the substrate and under each of the light emitting layer and the photosensitive layer. The photosensitive layer may include a fluorine-containing p-type semiconductor and a non-fullerene n-type semiconductor. The non-fullerene n-type semiconductor may form a pn junction with the p-type semiconductor.

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