公开(公告)号：US09263533B2

公开(公告)日：2016-02-16

申请号：US13622379

申请日：2012-09-19

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/66 ,  H01L29/76 ,  H01L29/788 ,  H01L21/70 ,  H01L29/02 ,  H01L29/417 ,  H01L29/423 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/4175 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7787

Abstract: A device having a channel with multiple voltage thresholds is provided. The channel can include a first section located adjacent to a source electrode, which is a normally-off channel and a second section located between the first section and a drain electrode, which is a normally-on channel. The device can include a charge-controlling electrode connected to the source electrode, which extends from the source electrode over at least a portion of the second section of the channel. During operation of the device, a potential difference between the charge-controlling electrode and the channel can control the on/off state of the normally-on section of the channel.

Abstract translation: 提供具有多个电压阈值的通道的装置。 通道可以包括位于与作为常开通道的源电极相邻的第一部分和位于第一部分和作为常开通道的漏电极之间的第二部分。 该装置可以包括连接到源电极的电荷控制电极，其从源电极延伸到通道的第二部分的至少一部分上。 在器件工作期间，充电控制电极和通道之间的电位差可以控制通道的常开部分的开/关状态。

公开(公告)号：US20140077265A1

公开(公告)日：2014-03-20

申请号：US14082998

申请日：2013-11-18

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/772

CPC classification number: H01L29/772 ,  H01H59/0009 ,  H01H2001/0078 ,  H01L23/66 ,  H01L27/0605 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/8605 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/19032 ,  H01L2924/19051 ,  H01L2924/3011 ,  H01P1/15 ,  H01L2924/00

Abstract: A switch includes an input contact and an output contact to a conducting channel. At least one of the input and output contacts is capacitively coupled to the conducting channel. A control contact is located outside of a region between the input and output contacts, and can be used to adjust the switch between on and off operating states. The switch can be implemented as a radio frequency switch in a circuit.

Abstract translation: 开关包括输入触点和与导电通道的输出触点。 输入和输出触点中的至少一个电容耦合到导电沟道。 控制触点位于输入和输出触点之间的区域之外，可用于在开关状态之间调整开关。 该开关可以实现为电路中的射频开关。

公开(公告)号：US10964862B2

公开(公告)日：2021-03-30

申请号：US15720352

申请日：2017-09-29

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Alexander Dobrinsky

IPC: H01L33/58 ,  H01L31/0232 ,  H01L31/0236 ,  H01L33/08 ,  H01L31/12 ,  H01L31/0352 ,  H01L31/101 ,  H01L33/32

Abstract: A semiconductor heterostructure for an optoelectronic device includes a base semiconductor layer having one or more semiconductor heterostructure mesas located thereon. One or more of the mesas can include a set of active regions having multiple main peaks of radiative recombination at differing wavelengths. For example, a mesa can include two or more active regions, each of which has a different wavelength for the corresponding main peak of radiative recombination. The active regions can be configured to be operated simultaneously or can be capable of independent operation. A system can include one or more optoelectronic devices, each of which can be operated as an emitter or a detector.

公开(公告)号：US10693035B2

公开(公告)日：2020-06-23

申请号：US15331896

申请日：2016-10-23

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Grigory Simin ,  Alexander Dobrinsky

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01L33/64 ,  G06F30/30 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/18 ,  H01L33/00 ,  H01L33/08 ,  H01L33/12 ,  H01L33/30 ,  H01L33/42 ,  H01L33/46 ,  H01L33/38 ,  H01S5/30 ,  H01S5/343

Abstract: A heterostructure for use in an electronic or optoelectronic device is provided. The heterostructure includes one or more semiconductor layers containing columnar nanostructures (e.g., nanowires). The nanowire semiconductor layer can include sub-layers of varying composition, at least one of which is an active layer that can include quantum wells and barriers. A heterostructure can include n-type and p-type semiconductor contact layers adjacent to the nanowire semiconductor layer containing the active layer.

公开(公告)号：US10593839B2

公开(公告)日：2020-03-17

申请号：US15798875

申请日：2017-10-31

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Alexander Dobrinsky

IPC: H01L33/38 ,  H01L33/06 ,  H01L33/40 ,  H01L33/30 ,  H01L33/32 ,  H01L33/46

Abstract: A contact for solid state light sources is described. The solid state light source can include an active region, such as a light emitting multiple quantum well, and a semiconductor layer, such as a p-type layer, from which carriers (e.g., holes) enter the active region. A contact can be located adjacent to the semiconductor layer and include a plurality of small area contacts extending only partially through the semiconductor layer. The plurality of small area contacts can have a characteristic lateral size at an interface between the small area contact and the semiconductor layer equal to or smaller than a characteristic depletion region width for the plurality of small area contacts.

公开(公告)号：US10587096B2

公开(公告)日：2020-03-10

申请号：US15444735

申请日：2017-02-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Grigory Simin

IPC: H01S5/30 ,  H01L33/14 ,  H01L33/32 ,  H01L33/06 ,  H01S5/042 ,  H01S5/062 ,  H01L33/36 ,  H01S5/06

Abstract: A solid-state light source with built-in access resistance modulation is described. The light source can include an active region configured to emit electromagnetic radiation during operation of the light source. The active region can be formed at a p-n junction of a p-type side with a p-type contact and a n-type side with a n-type contact. The light source includes a control electrode configured to modulate an access resistance of an access region located on the p-type side and/or an access resistance of an access region located on the n-type side of the active region. The solid-state light source can be implemented in a circuit, which includes a voltage source that supplies a modulation voltage to the control electrode to modulate the access resistance(s).

公开(公告)号：US20190027650A1

公开(公告)日：2019-01-24

申请号：US16143015

申请日：2018-09-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Alexander Dobrinsky

IPC: H01L33/24 ,  H01L33/44 ,  H01L33/40 ,  H01L33/14 ,  H01L33/08 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/24 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L2933/0091

Abstract: An opto-electronic device with two-dimensional injection layers is described. The device can include a semiconductor structure with a semiconductor layer having one of an n-type semiconductor layer or a p-type semiconductor layer, and a light generating structure formed on the semiconductor layer. A set of tilted semiconductor heterostructures is formed over the semiconductor structure. Each tilted semiconductor heterostructure includes a core region, a set of shell regions adjoining a sidewall of the core region, and a pair of two-dimensional carrier accumulation (2DCA) layers. Each 2DCA layer is formed at a heterointerface between one of the sidewalls of the core region and one of the shell regions. The sidewalls of the core region, the shell regions, and the 2DCA layers each having a sloping surface, wherein each 2DCA layer forms an angle with a surface of the semiconductor structure.

公开(公告)号：US20180219137A1

公开(公告)日：2018-08-02

申请号：US15926166

申请日：2018-03-20

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Grigory Simin ,  Alexander Dobrinsky

IPC: H01L33/48 ,  H01L33/64 ,  H01L27/15 ,  H01L33/62 ,  H01L27/12

CPC classification number: H01L33/486 ,  H01L27/1214 ,  H01L27/156 ,  H01L33/62 ,  H01L33/642 ,  H01L2224/16225 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2933/0075

Abstract: A mounting structure for mounting a set of optoelectronic devices is provided. A mounting structure for a set of optoelectronic devices can include: a body formed of an insulating material; and a heatsink element embedded within the body. A heatsink can be located adjacent to the mounting structure. The set of optoelectronic devices can be mounted on a side of the mounting structure opposite of the heatsink.

公开(公告)号：US09748362B2

公开(公告)日：2017-08-29

申请号：US14984408

申请日：2015-12-30

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/40 ,  H01L29/778 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423 ,  H01L29/20 ,  H01L29/06

CPC classification number: H01L29/66681 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/7786

Abstract: A device having a channel with multiple voltage thresholds is provided. The channel can include a first section located adjacent to a source electrode, which is a normally-off channel and a second section located between the first section and a drain electrode, which is a normally-on channel. The device can include a charge-controlling electrode connected to the source electrode, which extends from the source electrode over at least a portion of the second section of the channel. During operation of the device, a potential difference between the charge-controlling electrode and the channel can control the on/off state of the normally-on section of the channel.

公开(公告)号：US20170194475A1

公开(公告)日：2017-07-06

申请号：US15464609

申请日：2017-03-21

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Mikhail Gaevski ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/205 ,  H01L29/20 ,  H01L29/417

Abstract: A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate can be formed on the first surface. The device structure also includes a set of insulating layers located in the device structure between the lateral portion of the device channel and a second surface of the device structure opposite the first surface. An opening in the set of insulating layers defines a transition region between the lateral portion of the device channel and a vertical portion of the device channel. A contact to the vertical portion of the device channel can be located on the second surface.