公开(公告)号：US11742817B2

公开(公告)日：2023-08-29

申请号：US16618696

申请日：2018-06-21

Applicant: Soitec

Inventor： Isabelle Huyet ,  Cedric Charles-Alfred ,  Didier Landru ,  Alexis Drouin

IPC: H01L21/02 ,  H03H3/10 ,  H10N30/072 ,  H10N30/853

CPC classification number: H03H3/10 ,  H10N30/072 ,  H10N30/8536 ,  H10N30/8542 ,  H10N30/8548 ,  H10N30/8554

Abstract: A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick layer introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.

公开(公告)号：US20210036124A1

公开(公告)日：2021-02-04

申请号：US16980310

申请日：2019-02-18

Applicant: Soitec

Inventor： Alexis Drouin

IPC: H01L29/51 ,  H01L21/762 ,  H01L21/02

Abstract: A process for preparing a thin layer made of ferroelectric material based on alkali metal, exhibiting a determined Curie temperature, transferred from a donor substrate to a carrier substrate by using a transfer technique including implanting light species into the donor substrate in order to produce an embrittlement plane, the thin layer having a first, free face and a second face that is arranged on the carrier substrate. The process comprises a first heat treatment of the transferred thin layer at a temperature higher than the Curie temperature, the thin layer exhibiting a multi-domain character upon completion of the first heat treatment, and introducing, after the first heat treatment, protons into the thin layer, followed by applying a second heat treatment of the thin layer at a temperature lower than the Curie temperature to generate an internal electric field that results in the thin layer being made single domain.