公开(公告)号：US20170210617A1

公开(公告)日：2017-07-27

申请号：US15328371

申请日：2014-06-11

Applicant: Soitec

Inventor： Mariam Sadaka ,  Ludovic Ecarnot

IPC: B81C1/00 ,  B81B1/00

Abstract: Methods of forming semiconductor structures comprising one or more cavities (106), which may be used in the formation of microelectromechanical system (MEMS) transducers, involve forming one or more cavities in a first substrate (100), providing a sacrificial material (110) within the one or more cavities, bonding a second substrate (120) over the a surface of the first substrate, forming one or more apertures (140) through a portion of the first substrate to the sacrificial material, and removing the sacrificial material from within the one or more cavities. Structures and devices are fabricated using such methods.

公开(公告)号：US20250140600A1

公开(公告)日：2025-05-01

申请号：US18834482

申请日：2023-01-30

Applicant: Soitec

Inventor： Carine Duret ,  Ludovic Ecarnot ,  Charlene Porta

IPC: H01L21/762 ,  H10D86/00

Abstract: A method is used to fabricate a double semiconductor-on-insulator structure comprising, from a back side to a front side of the structure: a handle substrate, a first electrically insulating layer, a first single-crystal semiconductor layer, a second electrically insulating layer and a second single-crystal semiconductor layer. The method comprises:—a first step of formation of an oxide layer on the front and back sides of the handle substrate, to form the first electrically insulating layer and an oxide layer on the back side of the handle substrate, —a first step of layer transfer, to transfer the first single-crystal semiconductor layer, —a second step of formation of an oxide layer, to form the second electrically insulating layer, and —a second step of layer transfer, to transfer the second single-crystal semiconductor layer.

公开(公告)号：US20220319910A1

公开(公告)日：2022-10-06

申请号：US17597583

申请日：2020-07-13

Applicant: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES ,  Soitec

Inventor： Vincent Larrey ,  François Rieutord ,  Jean-Michel Hartmann ,  Frank Fournel ,  Didier Landru ,  Oleg Kononchuk ,  Ludovic Ecarnot

IPC: H01L21/762 ,  H01L21/02

Abstract: A process for hydrophilic bonding first and second substrates, comprising: —bringing the first and second substrates into contact to form a bonding interface between main surfaces of the first and second substrates, and —applying a heat treatment to close the bonding interface. The process further comprises, before the step of bringing into contact, depositing, on the main surface of the first and/or second substrate, a bonding layer comprising a non-metallic material that is permeable to dihydrogen and that has, at the temperature of the heat treatment, a yield strength lower than that of at least one of the materials of the first substrate and of the second substrate located at the bonding interface. The layer has a thickness between 1 and 6 nm, and the heat treatment is carried out at a temperature lower than or equal to 900° C., and preferably lower than or equal to 600° C.

公开(公告)号：US20220157882A1

公开(公告)日：2022-05-19

申请号：US17649982

申请日：2022-02-04

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Oleg Kononchuk ,  Ludovic Ecarnot ,  Christelle Michau

IPC: H01L27/146 ,  H01L21/762

Abstract: A substrate for a front-side type image sensor includes a supporting semiconductor substrate, an electrically insulating layer, and a silicon-germanium semiconductor layer, known as the active layer. The electrically insulating layer includes a stack of dielectric and metallic layers selected such that the reflectivity of the stack in a wavelength range of between 700 nm and 3 μm is greater than the reflectivity of a silicon oxide layer having a thickness equal to that of the stack. The substrate also comprises a silicon layer between the electrically insulating layer and the silicon-germanium active layer. The disclosure also relates to a method for the production of such a substrate.

公开(公告)号：US11282889B2

公开(公告)日：2022-03-22

申请号：US16477499

申请日：2018-01-10

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Oleg Kononchuk ,  Ludovic Ecarnot ,  Christelle Michau

IPC: H01L27/146 ,  H01L21/762

Abstract: A substrate for a front-side type image sensor includes a supporting semiconductor substrate, an electrically insulating layer, and a silicon-germanium semiconductor layer, known as the active layer. The electrically insulating layer includes a stack of dielectric and metallic layers selected such that the reflectivity of the stack in a wavelength range of between 700 nm and 3 μm is greater than the reflectivity of a silicon oxide layer having a thickness equal to that of the stack. The substrate also comprises a silicon layer between the electrically insulating layer and the silicon-germanium active layer. The disclosure also relates to a method for the production of such a substrate.

公开(公告)号：US20210366763A1

公开(公告)日：2021-11-25

申请号：US17444230

申请日：2021-08-02

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Oleg Kononchuk ,  Ludovic Ecarnot

IPC: H01L21/762 ,  H01L27/146 ,  H01L31/028 ,  H01L21/02 ,  H01L21/203

Abstract: A semiconductor on insulator type structure, which may be used for a front side type imager, successively comprises, from its rear side to its front side, a semiconductor support substrate, an electrically insulating layer and an active layer comprising a monocrystalline semiconductor material. The active layer is made of a semiconductor material having a state of mechanical stress with respect to the support substrate, and the support substrate comprises, on its rear side, a silicon oxide layer, the thickness of the oxide layer being chosen to compensate bow induced by the mechanical stress between the active layer and the support substrate during cooling of the structure after the formation by epitaxy of at least a part of the active layer on the support substrate.

公开(公告)号：US20200331750A1

公开(公告)日：2020-10-22

申请号：US16921675

申请日：2020-07-06

Applicant: Soitec

Inventor： Mariam Sadaka ,  Ludovic Ecarnot

IPC: B81C1/00 ,  B81B1/00

Abstract: Methods of forming semiconductor structures comprising one or more cavities, which may be used in the formation of microelectromechanical system (MEMS) transducers, involve forming one or more cavities in a first substrate, providing a sacrificial material within the one or more cavities, bonding a second substrate over a surface of the first substrate, forming one or more apertures through a portion of the first substrate to the sacrificial material, and removing the sacrificial material from within the one or more cavities. Structures and devices are fabricated using such methods.

公开(公告)号：US20200152689A1

公开(公告)日：2020-05-14

申请号：US16495362

申请日：2018-03-21

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Oleg Kononchuk ,  Ludovic Ecarnot

IPC: H01L27/146 ,  H01L31/028 ,  H01L21/762

Abstract: A semiconductor on insulator type structure, which may be sued for a front side type imager, successively comprises, from its rear side to its front side, a semiconductor support substrate, an electrically insulating layer and an active layer comprising a monocrystalline semiconductor material. The active layer is made of a semiconductor material having a state of mechanical stress with respect to the support substrate, and the support substrate comprises, on its rear side, a silicon oxide layer, the thickness of the oxide layer being chosen to compensate bow induced by the mechanical stress between the active layer and the support substrate during cooling of the structure after the formation by epitaxy of at least a part of the active layer on the support substrate.

公开(公告)号：US20160351438A1

公开(公告)日：2016-12-01

申请号：US15159646

申请日：2016-05-19

Applicant: Soitec

Inventor： Ludovic Ecarnot ,  Nicolas Daval ,  Nadia Ben Mohamed ,  Francois Boedt ,  Carole David ,  Isabell Guerin

IPC: H01L21/762 ,  B28D5/00

CPC classification number: H01L21/76251 ,  B28D5/00 ,  H01L21/02002 ,  H01L21/76254

Abstract: A method for transferring a layer from a single-crystal substrate, called a donor substrate, onto a receiver substrate, includes supplying the single-crystal donor substrate, the substrate having a notch oriented in a first direction of the crystal and a weakness region bounding the layer to be transferred, bonding of the single-crystal donor substrate onto the receiver substrate, the main surface of the donor substrate opposite to the weakness region with respect to the layer to be transferred being at the bonding interface, and detachment of the donor substrate along the weakness region. In the method, the donor substrate has, on the main surface bonded to the receiver substrate, an array of atomic steps extending essentially in a second direction of the crystal different from the first direction.

Abstract translation: 将被称为供体衬底的单晶衬底的层转移到接收器衬底上的方法包括：提供单晶施主衬底，具有沿晶体的第一方向取向的凹槽的衬底和包围晶体的弱区域 要转移的层，将单晶供体基板接合到接收器基板上，供体基板的与弱磁区相对的相对于待转移层的主表面在接合界面处，以及供体的分离 基底沿弱点区域。 在该方法中，施主衬底在与接收器衬底接合的主表面上具有基本上沿与第一方向不同的晶体的第二方向延伸的原子台阶阵列。

公开(公告)号：US12100727B2

公开(公告)日：2024-09-24

申请号：US17418148

申请日：2019-12-23

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Ludovic Ecarnot ,  Damien Massy ,  Nadia Ben Mohamed ,  Nicolas Daval ,  Christophe Girard ,  Christophe Maleville

IPC: H01L27/146 ,  H01L21/265 ,  H01L21/322 ,  H01L21/762 ,  H01L31/18

CPC classification number: H01L27/14683 ,  H01L21/26506 ,  H01L21/3223 ,  H01L21/3226 ,  H01L21/76254 ,  H01L27/1463 ,  H01L31/1892

Abstract: A method of manufacturing a substrate for a front-facing image sensor, comprises:—providing a donor substrate comprising a semiconductor layer to be transferred,—providing a semiconductor carrier substrate,—bonding the donor substrate to the carrier substrate, an electrically insulating layer being at the bonding interface,—transferring the semiconductor layer to the carrier substrate,—implanting gaseous ions in the carrier substrate via the transferred semiconductor layer and the electrically insulating layer, and—after the implantation, epitaxially growing an additional semiconductor layer on the transferred semiconductor layer.