公开(公告)号：JP2007298605A

公开(公告)日：2007-11-15

申请号：JP2006124902

申请日：2006-04-28

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： ITO MANABU ,  SEKINE NORIMASA ,  ISHIZAKI MAMORU ,  KINO OSAMU ,  MATSUBARA RYOHEI ,  KON MASATO

IPC: G02F1/1368 ,  G02F1/1335 ,  G09F9/30 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To facilitate the alignment of a semiconductor circuit and a color filter. SOLUTION: An alkali free glass 1737 (0.5 mm thickness) manufactured by Corning Inc. is used as a substantially transparent base material 3, a color filter layers 4 of R (red), G (green) and B (blue) are formed on one surface thereof, an over coat comprising a transparent resin is added thereon and then a protective film is stuck onto the color filter layers. A semiconductor circuit having substantially transparent thin film transistors and wiring lines having electric contact points conducted to the thin film transistors and constituted of a substantially transparent conductive material is provided so as to be aligned with a filter arranged pattern on the surface opposite to the color filters of the base material 3. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了便于半导体电路和滤色器的对准。 解决方案：使用由Corning Inc.制造的无碱玻璃1737（0.5mm厚）作为基本上透明的基材3，R（红色），G（绿色）和B（蓝色）的滤色器层4， 在其一个表面上形成，在其上添加包含透明树脂的外涂层，然后将保护膜粘附到滤色器层上。 具有基本上透明的薄膜晶体管和具有导电到薄膜晶体管并由基本上透明的导电材料构成的电接触点的布线的半导体电路被设置成与滤色器排列的图案对准在与滤色器相反的表面上 的基础材料3.版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006098664A

公开(公告)日：2006-04-13

申请号：JP2004283966

申请日：2004-09-29

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： KON MASATO ,  EGUCHI HIDEYUKI ,  TAMURA AKIRA

IPC: G03F1/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a substrate having an intermediate film serving as an etching stopper layer, in which the stresses of a thin film serving as a self-sustaining membrane, the intermediate film and a support substrate are optimally adjusted and which has conductivity, for the production of stencil mask that uses the substrate, and to provide the stencil mask and an exposure method. SOLUTION: The substrate is provided having such structure that an indium oxide thin film and a silicon thin film are laminated on the support substrate in this order, wherein stress adjustment is performed between the silicon thin film/indium oxide thin film and the support substrate, and wherein the indium oxide thin film contains one kind or more of elements selected from among tin, titanium, zirconium, hafnium, niobium, tantalum, tungsten, germanium, tellurium, zinc and fluorine as substances other than oxygen and indium. The stencil mask produced, by using the substrate and the exposure method that uses the mask are also provided. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种具有作为蚀刻停止层的中间膜的基板，其中用作自持膜的薄膜的应力，中间膜和支撑基板被最佳地调节， 其具有导电性，用于生产使用基底的模板掩模，以及提供模板掩模和曝光方法。 解决方案：提供具有以下结构的基板：氧化铟薄膜和硅薄膜依次层叠在支撑基板上，其中在硅薄膜/氧化铟薄膜和 并且其中所述氧化铟薄膜含有选自锡，钛，锆，铪，铌，钽，钨，锗，碲，锌和氟中的除了氧和铟以外的其它元素中的一种以上。 还提供了通过使用基板产生的模板掩模和使用掩模的曝光方法。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2012188687A

公开(公告)日：2012-10-04

申请号：JP2011051771

申请日：2011-03-09

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： KON MASATO

IPC: C23C16/54

Abstract: PROBLEM TO BE SOLVED: To provide a film forming device which can form a film by increasing the number of cycles without enlarging a facility, in the film forming device which forms the film while transferring a base board.SOLUTION: In the film forming device which forms the thin film on the base board 104 by using raw materials which are in air phase states while transferring the base board 104, the film forming device continuously or intermittently transfers the base board 104 by using a base board transfer mechanism 107 at a speed lower than the circumferential speed of a film forming drum 102 along the external peripheral face of the film forming drum 102. In this state, the raw materials are discharged toward the base board 104 in the air phase states from film forming sources 201A, 201B, 202A and 202B which are arranged at the external peripheral face of the film forming drum 102, and the film is formed on a face opposing the film forming drum 102 of the base board 104.

Abstract translation: 要解决的问题：提供一种可以在不扩大设备的情况下通过增加循环次数而形成膜的成膜装置，在形成膜的同时转印基板的成膜装置中。 解决方案：在通过使用在转印基板104时处于空气相状态的原材料在基板104上形成薄膜的成膜装置中，成膜装置连续地或间歇地将基板104传送到 以比成膜鼓102的圆周速度低的速度沿着成膜鼓102的外周面使用基板传送机构107.在该状态下，原料在空气中朝向基板104排出 来自成膜源201A，201B，202A和202B的相位状态被布置在成膜鼓102的外周面上，并且膜形成在与基板104的成膜鼓102相对的表面上。

版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012067342A

公开(公告)日：2012-04-05

申请号：JP2010212131

申请日：2010-09-22

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： KON MASATO

IPC: C23C14/00 ,  B01J3/00 ,  B01J3/02 ,  B08B3/08 ,  C23C16/44

Abstract: PROBLEM TO BE SOLVED: To provide a vacuum chamber capable of keeping the inside of the vacuum chamber in a clean condition and reducing the frequency of maintenance.SOLUTION: This vacuum chamber 100 installed in a device using a vacuum technology includes a mechanism configured to discharge a liquid from at least one first portion 101 of a structure installed on an inner wall of the vacuum chamber 100 or in the inside of the vacuum chamber 100, and to recover the liquid in at least one second portion 102 of the structure installed on the inner wall of the vacuum chamber 100 or in the inside of the vacuum chamber 100, wherein the discharge and the recovery of the liquid are performed in a vacuum atmosphere.

Abstract translation: 要解决的问题：提供一种能够保持真空室内部处于清洁状态并降低维护频率的真空室。 解决方案：安装在使用真空技术的装置中的真空室100包括一种机构，其被配置为从安装在真空室100的内壁上的结构的至少一个第一部分101或者在 真空室100中，并且在安装在真空室100的内壁或真空室100的内部的结构的至少一个第二部分102中回收液体，其中液体的排放和回收是 在真空气氛中进行。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2010078657A

公开(公告)日：2010-04-08

申请号：JP2008243976

申请日：2008-09-24

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： KON MASATO

IPC: G01N21/956 ,  G03F1/24 ,  G03F1/54 ,  G03F1/84

Abstract: PROBLEM TO BE SOLVED: To provide a reflection type photomask blank, reflection type photomask, and a method and a device for inspecting the same, which improve accuracy of pattern inspection of a reflection type photomask and reduce the time needed for the inspection. SOLUTION: The reflection type photomask blank includes a substrate, a first reflective film formed on the substrate, a light emitting layer formed on the first reflective film and emitting light by applying a voltage, an absorber formed on the light emitting layer, a light-shielding film formed on the absorber, and a second reflecting film formed on the light-shielding film. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供反射型光掩模坯料，反射型光掩模以及用于检查反射型光掩模的方法和装置，其提高反射型光掩模的图案检查的精度并减少检查所需的时间 。 解决方案：反射型光掩模坯料包括基板，形成在基板上的第一反射膜，形成在第一反射膜上并通过施加电压发光的发光层，形成在发光层上的吸收体， 形成在吸收体上的遮光膜和形成在遮光膜上的第二反射膜。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2008072012A

公开(公告)日：2008-03-27

申请号：JP2006250705

申请日：2006-09-15

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： ISHIZAKI MAMORU ,  KON MASATO ,  ITO MANABU

IPC: H01L29/786 ,  H01L21/28

Abstract: PROBLEM TO BE SOLVED: To provide a thin-film transistor in which problems that a source electrode and a drain electrode are easily broken and that a contact resistance is high when an oxide semiconductor film such as an InGaZnO
4 thin film is provided between the source electrode and the drain electrode.
SOLUTION: The thin-film transistor has at least a gate electrode, a gate insulating film, a source electrode, a gate electrode and an oxide semiconductor film on an insulating substrate. In the thin-film transistor, the gate electrode and the gate insulating film are sequentially stacked on the insulating substrate, the source and drain electrodes are provided on the gate insulating film, and the oxide semiconductor film is provided on the gate insulating film between the source and drain electrodes, and on the principal portion of the source electrode and the principal portion of the drain electrode.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种薄膜晶体管，其中当诸如InGaZnO 4的氧化物半导体膜时，源电极和漏电极容易断裂和接触电阻高的问题， / SB>薄膜设置在源电极和漏电极之间。 解决方案：薄膜晶体管在绝缘基板上至少具有栅电极，栅极绝缘膜，源电极，栅电极和氧化物半导体膜。 在薄膜晶体管中，栅极电极和栅极绝缘膜依次层叠在绝缘基板上，源极和漏极设置在栅极绝缘膜上，氧化物半导体膜设置在栅极绝缘膜之间 源极和漏极，以及源电极的主要部分和漏电极的主要部分。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007298628A

公开(公告)日：2007-11-15

申请号：JP2006125196

申请日：2006-04-28

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： ITO MANABU ,  SEKINE NORIMASA ,  ISHIZAKI MAMORU ,  KINO OSAMU ,  MATSUBARA RYOHEI ,  KON MASATO

IPC: G09F9/00 ,  G02B5/20 ,  G02F1/1335 ,  G02F1/1368

Abstract: PROBLEM TO BE SOLVED: To provide a structure of a display device and a manufacturing method of the display device which makes the positioning of substrates formed of a color filter and a semiconductor circuit unnecessary. SOLUTION: The image display device comprises: the color filter; a substantially transparent substrate; the semiconductor circuit composed of a substantially transparent thin film transistor and lines constituted by substantially transparent conductive material having electrical contacts with the transistor; and a reflection type display element, disposed in the order viewed from the visual side of the display device, therein the color filter and the substantially transparent semiconductor circuit are positioned to each other and are formed on surfaces of the transparent substrate different from each other. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种显示装置的结构和显示装置的制造方法，其使得由滤色器和半导体电路形成的基板的定位不必要。 解决方案：图像显示装置包括：滤色器; 基本上透明的基材; 由基本上透明的薄膜晶体管构成的半导体电路和由与晶体管电接触的基本上透明的导电材料构成的线; 以及反射型显示元件，其以从显示装置的视觉侧观看的顺序设置在其中，滤色器和基本上透明的半导体电路彼此定位并形成在彼此不同的透明基板的表面上。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007298602A

公开(公告)日：2007-11-15

申请号：JP2006124890

申请日：2006-04-28

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： ITO MANABU ,  SEKINE NORIMASA ,  ISHIZAKI MAMORU ,  KINO OSAMU ,  MATSUBARA RYOHEI ,  KON MASATO

IPC: G09F9/30 ,  G02F1/1368 ,  H01L29/786 ,  H01L51/05

Abstract: PROBLEM TO BE SOLVED: To provide a structure, a transmission type liquid crystal display device and a manufacturing method of semiconductor circuit which facilitates the positioning between a semiconductor circuit and a color filter, and to provide a manufacturing method of the transmission type liquid crystal display device. SOLUTION: As a substantially transparent planar first substrate 5, a non-alkali glass 1737 (thickness 0.5 mm) made by Corning Co., Ltd. is used and a color filter layer 4 of R(red), G(green), B(blue) is formed on one side surface of the thickness direction. Subsequently, as a substantially transparent planar second substrate 3, likewise a non-alkali glass 1737 (thickness 0.5 mm) made by Corning Co., Ltd. is used and a substantially transparent semiconductor circuit 2 is formed on one side surface of the thickness direction. While opposing the surface of a color filter which faces the opposite side to the first substrate 5 and the surface of the second substrate 3 which faces the opposite side to the semiconductor circuit 2 to each other, the positioning between the filter array pattern on the first substrate 5 and the semiconductor circuit 2 on the second substrate 3 is performed, and the first substrate 5 and the second substrate 3 are overlapped and joined via the color filter 4. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种促进半导体电路和滤色器之间的定位的半导体电路的结构，透射型液晶显示装置和制造方法，并且提供透射型的制造方法 液晶显示装置。 解决方案：作为基本透明的平面第一基板5，使用由Corning Co.，Ltd。制造的无碱玻璃1737（厚度0.5mm），并且使用R（红色），G（绿色）的滤色器层4 ），B（蓝色）形成在厚度方向的一个侧面上。 随后，作为基本上透明的平面第二基板3，同样使用由Corning Co.，Ltd。制造的非碱玻璃1737（厚度0.5mm），并且在厚度方向的一个侧表面上形成基本上透明的半导体电路2 。 在与第一基板5相对的滤色片的表面与第二基板3的与半导体电路2相对的一侧的表面相对的情况下，在第一 基板5和第二基板3上的半导体电路2，并且第一基板5和第二基板3通过滤色器4重叠并接合。版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007123699A

公开(公告)日：2007-05-17

申请号：JP2005316402

申请日：2005-10-31

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： KON MASATO

IPC: H01L29/786 ,  C23C14/08 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To provide a thin-film transistor material with which a semiconductor can be deposited with good reproducibility and yield of a thin film transistor can be improved by eliminating the necessity of precisely controlling an oxygen flow rate in depositing a semiconductor principally containing InGaZnO4 of an amorphous oxide semiconductor depositable at a room temperature, and to provide a method of manufacturing the same.
SOLUTION: Using an InGaZnO4 doped with Sn, an active layer made of an Sn-doped InGaZnO4 thin film is formed on a flexible substrate by a sputtering method. Thus, the problem can be solved.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供薄膜晶体管材料，通过该薄膜晶体管材料可以以良好的再现性沉积半导体，并且可以通过消除精确控制沉积中的氧气流速的必要性来改善薄膜晶体管的产量 主要包含可在室温下沉积的无定形氧化物半导体的InGaZnO4的半导体，并提供其制造方法。 解决方案：使用掺杂Sn的InGaZnO4，通过溅射法在柔性衬底上形成由Sn掺杂的InGaZnO 4薄膜制成的有源层。 因此，问题可以解决。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007123661A

公开(公告)日：2007-05-17

申请号：JP2005315785

申请日：2005-10-31

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： KON MASATO ,  KUKIMOTO HIROSHI ,  ISHIZAKI MAMORU ,  ITO MANABU

IPC: H01L29/786 ,  C23C14/08 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To provide a thin-film transistor having an active layer capable of being deposited at a room temperature by suppressing variations in performance of individual products.
SOLUTION: By using InGaSnO
x (4≤x≤5) as a material of the thin-film transistor, an amorphous InGaSnO
x (4≤x≤5) semiconductor can be formed on a flexible board at a room temperature with a wide process window, and the thin-film transistor having high bending strength can be manufactured while suppressing the variations between products at the minimum. Further, a sputtering method, especially, an InGaSnO
5 target is used as the manufacturing method to make an oxygen flow rate 2-4%, and thus, mobility of about 1 cm
2 /Vs can be stably obtained.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种具有能够在室温下沉积的活性层的薄膜晶体管，通过抑制各种产品的性能变化。

解决方案：通过使用InGaSnO x SB（4≤x≤5）作为薄膜晶体管的材料，非晶InGaSnO x SB（4≤x≤5） ）半导体可以在宽的工艺窗口的室温下形成在柔性板上，并且可以在抑制产品之间的变化最小的同时制造具有高弯曲强度的薄膜晶体管。 此外，使用溅射方法，特别是InGaSnO 5 SB目标作为使氧气流量为2-4％的制造方法，因此，迁移率为约1cm 2 / 可以稳定地获得SP> / Vs。 版权所有（C）2007，JPO＆INPIT