CURRENT LEAD DEVICE
    11.
    发明专利

    公开(公告)号:JPH0794320A

    公开(公告)日:1995-04-07

    申请号:JP23392593

    申请日:1993-09-20

    Applicant: TOSHIBA CORP

    Abstract: PURPOSE:To provide a current lead device with which a critical current can be increased in the state wherein an AC loss can be suppressed using an oxide superconducting body as a conductor and also reliability in bending can be improved. CONSTITUTION:In a current lead device formed by parallel-connecting a plurality of rod-like or linear oxide superconducting conductors 22, each oxide superconducting conductor 22 is arranged in such a manner that it is positioned on the circular line 23 described on the surface crossing at right angle with the extending direction of each oxide superconducting conductor.

    EXHAUST HEAT RECOVERY BOILER
    12.
    发明专利

    公开(公告)号:JPH0763305A

    公开(公告)日:1995-03-07

    申请号:JP21114593

    申请日:1993-08-26

    Applicant: TOSHIBA CORP

    Abstract: PURPOSE:To feed superheat steam, generated by an exhaust heat recovery boiler, at temperature adjusted to a proper value. CONSTITUTION:A superheat steam generating part SH to change steam fed from a high pressure drum 20 of an exhaust heat recovery boiler 1 to superheat steam. The superheat steam generating part SH is divided into a superheat steam first generating part 26 and a superheat steam second generating part 25 and the generating parts 25 and 26 are individually connected in series to the high pressure drum 20.

    WASTE HEAT RECOVERY BOILER DEVICE
    13.
    发明专利

    公开(公告)号:JPH06229503A

    公开(公告)日:1994-08-16

    申请号:JP1460893

    申请日:1993-02-01

    Applicant: TOSHIBA CORP

    Inventor: YAMADA MINORU

    Abstract: PURPOSE:To provide a waste heat recovery boiler with a feed water outlet distributing pipe wherein a steam-water mixed flow generated at an economizer outlet pipe at a low load of the boiler does not cause an unstable state in the control of water level and pressure of a drum so that a stable operation can be performed. CONSTITUTION:In a waste heat recovery boiler device, flow control valves 11, 12 are provided respectively in feed water pipe lines of the outlets of economizers 7, 4 and a feed water distributing pipe 22 wherein a horizontal cyclone 23 is coupled with a distribution tray 24 is provided in each of the feed water outlets for introducing steam-water mixed fluid into each steam drum 5, 8 through the flow control valve from the economizer. Consequently, steam flows out from the left and right of the outlet of the cyclone 23 into the steam drum and water falls down to the water surface of the drum through a large number of holes 26 in the bottom of the tray 24.

    14.
    发明专利
    失效

    公开(公告)号:JPH05291498A

    公开(公告)日:1993-11-05

    申请号:JP8709092

    申请日:1992-04-08

    Abstract: PURPOSE:To mount and fix a semiconductor device including an integrated circuit region layer without providing an insulating layer on a wiring frame. CONSTITUTION:There are provided a predetermined conductivity type integrated circuit region layer 21, and a support region layer 21, and a support region layer 22 for supporting the integrated circuit region layer 21. The support region layer 22 has a conductivity type complemetary to the integrated circuit region layer 22 The integrated circuit region layer 21 is back-biassed by a bias circuit 29.

    CONTROL OF VAPOR TEMPERATURE AT SUPERHEATER/REHEATER OUTLET OF COMPLEX POWER PLANT

    公开(公告)号:JPH03199601A

    公开(公告)日:1991-08-30

    申请号:JP33691889

    申请日:1989-12-26

    Applicant: TOSHIBA CORP

    Abstract: PURPOSE:To prevent a rotor from being subjected to excessive thermal stresses by raising the vapor temperatures at the outlets of the superheater and the reheater of a waste heat recovery heat exchanger at a rate lower than a value allowable to a steam turbine during the period from the start to the rated operation. CONSTITUTION:Upon the start of a complex power plant, a temperature setting device 32 works, vapor temperatures of a superheater 12 and a reheater 13 are monitored with inlet side vapor temperature detectors 27, 29, cooling water flow rate adjusting valves 25, 26 are controlled so that the outlet vapor temperatures of the superheater 12 and the reheater 13 are below set values changed according to main vapor conditions and others, and temperature reducers 21, 22 work. As a result, the temperatures, at the outlets of the superheater 12 and the reheater 13, of superheated vapor supplied to a steam turbine 4 are controlled to rise at a rate lower than the value allowed to the steam turbine 4. This prevents the steam turbine device from being subjected to excessive thermal stresses.

    SEMICONDUCTOR INTEGRATED CIRCUIT
    16.
    发明专利

    公开(公告)号:JPH02249262A

    公开(公告)日:1990-10-05

    申请号:JP6982689

    申请日:1989-03-22

    Abstract: PURPOSE:To achieve high speed of following properties of power supply without increasing consumption current by providing a specific substrate potential leak circuit at a semiconductor integrated circuit incorporating a substrate potential controlling function. CONSTITUTION:In a semiconductor integrated circuit incorporating a substrate potential detect ion circuit 3 for detecting a substrate potential generation circuit 2 and the substrate potential and a substrate potential controlling function by a switch circuit 4 which turns on or off operation of the substrate potential generation circuit 2 being based on the detection output of the substrate potential detection circuit 3, if the substrate potential drops toward the negative direction from the level where the substrate potential generation circuit 2 operates by a specified constant voltage or more, electric charge is injected into a substrate 1 to increase the substrate potential, while if the substrate potential reaches a constant voltage in negative direction which is slightly lower thai] the level where the substrate potential operates the substrate potential generation circuit 2, injection of electric charge into the substrate 1 is stopped. A substrate potential leak circuit 5 takes care of this function. For example, the above substrate potential leak circuit 5 consists of a P-channel transistor P5 and a resistor R.

    PRODUCTION OF SUPERCONDUCTOR
    17.
    发明专利

    公开(公告)号:JPH01261232A

    公开(公告)日:1989-10-18

    申请号:JP8767788

    申请日:1988-04-09

    Applicant: TOSHIBA CORP

    Abstract: PURPOSE:To prevent reduction in characteristics of superconductor and to improve critical current density, by bringing a specific oxide superconductor through a CuO or Cu2O layer into contact with a substrate and heating. CONSTITUTION:Oxides, carbonates, etc. of constituent elements of Bi, Sr, Ca and Cu or Tl, Ba, Ca and Cu are blended in an atomic ratio of 2:2:1:2 or 2:2:2:3, calcined in an oxygen atmosphere at 800 deg.C-the melting point, ground, calcined and ground to give oxide superconductor powder 1a and 1b. Then the powder 1a and 1b or an oxide having a lower Cu content than the oxide superconductor is brought into contact through a CuO or Cu2O layer 2a or 2b with a substrate 3a or 3b, heat-treated at 800-900 deg.C and sintered.

    SUPERCONDUCTOR, SUPERCONDUCTING WIRE AND PRODUCTION OF SAID WIRE

    公开(公告)号:JPH01261230A

    公开(公告)日:1989-10-18

    申请号:JP8767588

    申请日:1988-04-09

    Applicant: TOSHIBA CORP

    Abstract: PURPOSE:To raise current density and to lessen reduction in critical current density by magnetic field, by orientating specific oxide superconductor powder in the direction to send electric current in plane C of crystal. CONSTITUTION:Carbonates, oxides, etc. of Bi, Sr, Ca and Cu are blended so as to make an atomic ratio of 2:2:2:3 or Tl, Ba, Ca and Cu are blended in an atomic ratio of 2:2:1:2 or 2:2:2:3, calcined in an oxygen atmosphere at >=the melting point, ground, burnt and ground to give oxide superconductor powder having pressure, sintered at 800-900 deg.C, plane C of crystal is fixed in the direction to send an electric current to give a superconductor or the powder is packed into a metallic pipe, which is cast, rolled, drawn and the face is reduced to give a superconducting wire having plane C of crystal orientated in the longer direction.

    MANUFACTURE OF OXIDE SUPERCONDUCTIVE WIRE

    公开(公告)号:JPH01163915A

    公开(公告)日:1989-06-28

    申请号:JP32172887

    申请日:1987-12-19

    Applicant: TOSHIBA CORP

    Abstract: PURPOSE:To prevent oxygen from enclosing in a metal coverage in a hot or cold process after a specific processing and to prevent an expansion generated in the metal membrane by filling an oxide superconductor powder in an oxygen permeable tube, applying a surface reduction process at a specific temperature, and releasing the oxygen in the crystals of the oxide superconductor, which is liable to be released, in a hot processing. CONSTITUTION:An oxide superconductor powder is filled in an oxygen permeable metal tube, a surface reduction process is applied at 750 to 900 deg.C, and the oxygen in the crystals of the oxide superconductor which is liable to be released is released. Then a wiredrawing process is carried out to a specific outer dimension, heat treatments are applied at 850 to 950 deg.C and at 400 to 600 deg.C in the oxygen ambiance, and the oxygen is led to the oxygen-short rooms in the crystals of the oxide superconductor. As the oxygen permeable metal tube, silver, gold, platinum, or an alloy of them is used. And the oxide superconductor is made of a perovskite structure oxide superconductor including Y, La, and a rare earth element. In such a way, the generation of expansion in the metal membrane owing to the heat treatments is prevented, and the generation of bores and cracks is suppressed.

    OXIDE SUPERCONDUCTIVE WIRE
    20.
    发明专利

    公开(公告)号:JPH01163907A

    公开(公告)日:1989-06-28

    申请号:JP32172387

    申请日:1987-12-19

    Applicant: TOSHIBA CORP

    Abstract: PURPOSE:To increase the mechanical strength, to obtain a high critical current density, and to improve the stability and the reliability, by removing a metal coverage ot a superconductor, and applying a heat treatment in the ambiance including oxygen. CONSTITUTION:A baked material made by baking and crystallizing a perovskite structure of oxide superconductor 2 including a rare earth element is powdered, the resultant powder is filled in a metal pipe in which plural metal wires 3 are arranged in the longitudinal direction of the pipe, and both ends are sealed. Then, after the metal pipe is processed to reduce the diameter up to a desired outer diameter, the outer metal pipe is removed, and then a heat treatment is applied in the ambiance including oxygen. After this baking, it is cooled gradually, oxygen is introduced to the oxygen-short rooms in the crystalline structure of the oxide superconductive wire 1, and the superconductive property is improved.

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