公开(公告)号：US20210407946A1

公开(公告)日：2021-12-30

申请号：US17469868

申请日：2021-09-08

Applicant: Winbond Electronics Corp.

Inventor： Jin-Neng Wu ,  Yen-Jui Chu

IPC: H01L23/00

Abstract: Provided is a circuit structure including a substrate, a pad, a dielectric layer, a conductive layer, an adhesion layer, and a conductive bump. The pad is disposed on the substrate. The dielectric layer is disposed on the substrate and exposes a portion of the pad. The conductive layer contacts the pad and extends from the pad to cover a top surface of the dielectric layer. The adhesion layer is disposed between the dielectric layer and the conductive layer. The conductive bump extends in an upward manner from a top surface of the conductive layer. The conductive bump and the conductive layer are integrally formed. A method of manufacturing the circuit structure is also provided.

公开(公告)号：US20210104492A1

公开(公告)日：2021-04-08

申请号：US16592796

申请日：2019-10-04

Applicant: Winbond Electronics Corp.

Inventor： Jin-Neng Wu

IPC: H01L25/065 ,  H01L21/56 ,  H01L23/48 ,  H01L23/31 ,  H01L23/00

Abstract: Provided is a semiconductor package including first to third semiconductor dies, first to third RDL layers, conductive vias and an encapsulant, and a manufacturing method thereof. The first RDL layer is on an active surface of the first semiconductor die. The second semiconductor die is on the first RDL layer and electrically connected thereto through first TSVs. The conductive vias are on the first RDL layer and around the second semiconductor die. The encapsulant encapsulates the second semiconductor die and the conductive vias. The second RDL layer is on the encapsulant. The third semiconductor die is on the second RDL layer and electrically connected thereto through second TSVs. The third RDL layer is on the third semiconductor die. The area of the second semiconductor die is smaller than that of the first semiconductor die. The area of the third semiconductor die is larger than that of the second semiconductor die.

公开(公告)号：US11309267B2

公开(公告)日：2022-04-19

申请号：US16929109

申请日：2020-07-15

Applicant: Winbond Electronics Corp.

Inventor： Yen-Jui Chu ,  Jin-Neng Wu

IPC: H01L23/00

Abstract: Provided is a semiconductor device including a substrate, a passivation layer, and a connector. The passivation layer is disposed on the substrate. The connector is embedded in the passivation. An interface of the connector in contact with the passivation layer is uneven, thereby improving the structural stability of the connector. A method of manufacturing the semiconductor is also provided.

公开(公告)号：US20220020711A1

公开(公告)日：2022-01-20

申请号：US16929109

申请日：2020-07-15

Applicant: Winbond Electronics Corp.

Inventor： Yen-Jui Chu ,  Jin-Neng Wu

IPC: H01L23/00

Abstract: Provided is a semiconductor device including a substrate, a passivation layer, and a connector. The passivation layer is disposed on the substrate. The connector is embedded in the passivation. An interface of the connector in contact with the passivation layer is uneven, thereby improving the structural stability of the connector. A method of manufacturing the semiconductor is also provided.

公开(公告)号：US20200350268A1

公开(公告)日：2020-11-05

申请号：US16398278

申请日：2019-04-30

Applicant: Winbond Electronics Corp.

Inventor： Yen-Jui Chu ,  Jin-Neng Wu ,  Chun-Hung Lin ,  Hsin-Hung Chou

IPC: H01L23/00

Abstract: A wire bonding structure and a method of manufacturing the same are provided. The wire bonding structure includes a bonding pad structure, a protection layer and a bonding wire. The bonding pad structure includes a bonding pad and a conductive layer. The bonding pad has an opening. The conductive layer is electrically connected to the bonding pad. At least a portion of the conductive layer is located in the opening of the bonding pad and laterally surrounded by the bonding pad. The protection layer at least covers a portion of a surface of the bonding pad structure. The bonding wire is bonded to the conductive layer of the bonding pad structure.