公开(公告)号：CA1140078A

公开(公告)日：1983-01-25

申请号：CA343527

申请日：1980-01-11

Applicant: XEROX CORP

Inventor： CONNELL G A NEVILLE ,  JOHNSON RICHARD I

IPC: C23F4/00 ,  B41M5/24 ,  C23C14/02 ,  C23C14/24 ,  C23C14/34 ,  C23C14/56 ,  G03G5/082 ,  B01K1/00 ,  B05D3/06

Abstract: Deposition of continuous pin-hole free tellurium films with thicknesses to less than 150A on a suitable substrate is achieved by first pretreating the substrate prior to film deposition. Ion sputtering or bombardment of the substrate surface with an inert gas prior to tellurium evaporation creates a dense coverage of nucleation sites on the substrate which improves the adhesiveness and resistance to abrasion and oxidation of the deposited film while providing very thin pinhole free films of uniform thickness and desired crystallite orientation.