公开(公告)号：JP2004096082A

公开(公告)日：2004-03-25

申请号：JP2003175939

申请日：2003-06-20

Applicant: Xerox Corp ,  ゼロックス コーポレイションXerox Corporation

Inventor： WILLIAM S WON ,  READY STEVEN E ,  WHITE STEPHEN D ,  SALLEO ALBERTO ,  CHABINYC MICHAEL L

IPC: B05D1/26 ,  B05D1/32 ,  B05D7/00 ,  H01L21/033 ,  H01L21/288 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/336 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/40

CPC classification number: H01L51/0004 ,  B82Y30/00 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139 ,  H01L29/66765 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0541

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a pattern by masking the substrate surface.
SOLUTION: A phase change mask material is heated. Droplets of the mask material are discharged and deposited on the substrate surface of the thin film or the like to be etched by using a droplet source. The temperature on the substrate surface of the thin film or the like is controlled so that the droplets are rapidly solidified after contacting the thin film or the substrate surface. The substrate of the thin film or the like is processed so as to modify the characteristics of the surface by depositing a self-forming single layer on the surface. After the deposition, the masking material is removed. The mask is made to function as negative resistance by depositing a required material on the substrate so that it is deposited only in the region which is not covered with the mask at the beginning.
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