公开(公告)号：EP1261447A2

公开(公告)日：2002-12-04

申请号：EP01910116.1

申请日：2001-03-05

Applicant: YEDA RESEARCH AND DEVELOPMENT COMPANY, LTD. ,  Holon Academic Institute of Technology

Inventor： TENNE, Reshef ,  RAPOPORT, Lev ,  LVOVSKY, Mark ,  FELDMAN, Yishay ,  LESHCHINSKY, Volf

IPC: B22F3/11

CPC classification number: C10M103/06 ,  B22F3/114 ,  C10M103/00 ,  C10M103/04 ,  C10M171/06 ,  C10M2201/003 ,  C10M2201/0403 ,  C10M2201/0433 ,  C10M2201/05 ,  C10M2201/053 ,  C10M2201/0603 ,  C10M2201/0613 ,  C10M2201/0623 ,  C10M2201/065 ,  C10M2201/0653 ,  C10M2201/0663 ,  C10M2201/0803 ,  C10M2201/0853 ,  C10M2201/0863 ,  C10M2201/0873 ,  C10M2201/10 ,  C10M2201/1006 ,  C10M2201/1023 ,  C10M2201/1033 ,  C10M2201/1053 ,  C10M2201/123 ,  C10M2203/10 ,  C10N2210/06 ,  C22C32/0089 ,  Y10S977/734 ,  Y10T428/12028 ,  Y10T428/12528

Abstract: The present invention provides a new composite material comprising a porous matrix made of metal, metal alloy or semiconducting material and hollow fullerene-like nanoparticles of a metal chalcogenide compound or mixture of such compounds. The composite material is characterized by having a porosity between about 10% and about 40%. The amount of the hallow nanoparticles in the composite material is 1-20 wt. %.

公开(公告)号：EP2190784A1

公开(公告)日：2010-06-02

申请号：EP08808021.3

申请日：2008-09-10

Applicant: Yeda Research And Development Company Ltd.

Inventor： TENNE, Reshef ,  DEEPAK, Francis Leonard ,  COHEN, Hagai ,  COHEN, Sidney R.

IPC: C01G39/00 ,  C01G41/00

CPC classification number: C01G39/06 ,  B82Y30/00 ,  C01G39/006 ,  C01G41/006 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/13 ,  C01P2004/34 ,  C01P2004/64

Abstract: Fullerene-like (IF) nanostructures of the formula A1-x-Bx-chalcognide are described. A being a metal or transition metal or an alloy of metals and/or transition metals, B being a metal or transition metal B different from that of A and x being ? 0.3. A process for their manufacture and their use for modifying the electronic character of A-chalcognide are described.

Abstract translation: 描述了式A1-x-Bx-可可的富勒烯样（IF）纳米结构。 A是金属或过渡金属或金属和/或过渡金属的合金，B是与A不同的金属或过渡金属B， 0.3。 描述了它们的制造方法以及它们用于修饰A-可可的电子特征的用途。

公开(公告)号：EP1177153A1

公开(公告)日：2002-02-06

申请号：EP00921021.2

申请日：2000-05-02

Applicant: YEDA RESEARCH AND DEVELOPMENT COMPANY, LTD.

Inventor： TENNE, Reshef ,  ROTHSCHILD, Aude ,  HOMYONFER, Moshe

IPC: B82B3/00 ,  C30B23/00 ,  C01G1/12 ,  C01B19/00 ,  C01B17/20

CPC classification number: G01Q70/12 ,  C01B17/20 ,  C01B19/02 ,  C01G41/00 ,  C01G41/02 ,  C01P2002/72 ,  C01P2002/74 ,  C01P2002/82 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/13 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/10 ,  C01P2006/60 ,  C30B25/005 ,  C30B29/46 ,  C30B29/605 ,  Y10S977/844

Abstract: Nanotubes of transition metal chalcogenides as long as 0.2-20 microns or more, perfect in shape and of high crystallinity, are synthesized from a transition metal material, e.g., the transition metal itself or a substance comprising a transition metal such as an oxide, water vapor and a H 2 X gas or H 2 gas and X vapor, wherein X is S, Se or Te, by a two-step or three-step method. The transition metal chalcogenide is preferably WS 2 or WSe 2 . Tips for scanning probe microscopy can be prepared from said long transition metal chalcogenide nanotubes.