公开(公告)号：US3960421A

公开(公告)日：1976-06-01

申请号：US538326

申请日：1975-01-03

Applicant: Michel Lagues ,  Jean-Louis Domange

Inventor： Michel Lagues ,  Jean-Louis Domange

IPC: H01J9/02 ,  H01J9/12

CPC classification number: H01J9/022 ,  H01J9/12 ,  H01J2201/32 ,  H01J2201/34

Abstract: Monoatomic layers to reduce the work function of photocathodes, secondary emission electrodes and field emission electrodes are obtained by surface segregation as a result of a thermal treatment after preceding indiffusion of the activator. Examples are in particular p-semiconductors such as silicon and III-V compounds with alkali metals.

Abstract translation: 通过在激活剂之前的扩散之后的热处理的结果，通过表面偏析获得用于降低光电阴极，二次发射电极和场致发射电极的功函数的单原子层。 实例特别是具有碱金属的硅和III-V化合物的p-半导体。

公开(公告)号：US2164595A

公开(公告)日：1939-07-04

申请号：US17431437

申请日：1937-11-13

Applicant: SIEMENS AG

Inventor： KARL SIEBERTZ

IPC: H01J9/12

CPC classification number: H01J9/12 ,  H01J2201/32 ,  H01J2201/34

公开(公告)号：JPS5721823B2

公开(公告)日：1982-05-10

申请号：JP3441773

申请日：1973-03-26

IPC: H01J1/30 ,  H01J9/02 ,  H01J9/12

CPC classification number: H01J9/12 ,  H01J9/022 ,  H01J2201/32 ,  H01J2201/34