Abstract:
PROBLEM TO BE SOLVED: To provide a joining structure between an end cell and a separator with which electrical performance of a metal supported solid oxide fuel cell is improved and sealing efficiency and current collection performance are improved. SOLUTION: The end cell and the separator of the solid oxide fuel cell are joined by sinter joining of the end cell and the separator using slurry as a joining material 900 by eliminating a conventional current collector to improve rigidity and sealing efficiency. The joining structure between the end cell and the separator of the solid oxide fuel cell is composed of by including an end cell 2000 having an electrolyte 100, a fuel electrode 200 and an air electrode 300 formed in contact respectively on both side faces of the electrolyte, and a separator 500 for which a supply passage 510 to supply air to the air electrode and a supply passage 520 to supply a fuel gas to the fuel electrode are formed on both sides of the end cell. In the solid oxide fuel cell 1000, one side or both sides of the end cell are directly joined to the separator. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a yellow fluorescent substance with wide luminescent wave band and activated by a blue LED. SOLUTION: The Ce 3+ activated calcium silicate yellow fluorescent substance is shown by a composition formula of (1): (Ca 1-y M y ) 2-x-z SiO 4 :Ce 3+ x ,M' + z wherein x represents 0 COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation:要解决的问题:提供具有宽荧光波段并由蓝色LED激活的黄色荧光物质。 解决方案:活化的硅酸钙黄色荧光物质由(1)的组成式表示:(Ca 1-y SB> M y SB>) 2-xz SB> SiO SB>:Ce 3 + SP> 其中x表示0
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method of a three-dimension large-sized molded article, which enables a manufacture of the molded article of a size exceeding the conventional manufacturing range, reduces the consumption of materials, and at the same time, enables a firm assembling between parts. SOLUTION: The manufacturing method of the three-dimension large-sized molded article comprises a first step S110 of obtaining three-dimension shape data for the three-dimension molded article, a second step S120 of converting the three-dimension shape data into the size required for the manufacture of the final molded article, a third step S130 of converting the data with the size converted, into a cavity morphology shell data hollowing the inside of the molded article, a fourth step S140 of dividing the shell data into size ranges of parts data, which enable a manufacture by the conventional rapid prototyping, a fifth step S150, S160 of molding each parts data by the rapid prototyping to manufacture each molding part object, and a sixth step S170 of assembling each manufactured molding part object, to complete the molded article. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a driving apparatus for a display, further in detail, a driving apparatus for a flat panel display. SOLUTION: The display driver comprises: a digital/analog converter which receives an input voltage lower than a source voltage used in a buffer amplifier for output drive, generates a plurality of reference voltages and selects a reference voltage corresponding to an M (M is a positive integer) bit data signal; and an amplifier which amplifies the reference voltage selected by the digital/analog converter. Consequently, a circuit area and power consumption of the driving apparatus for the display can be minimized. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a high-quality nondefective binary-alloy single crystal nanostructure having excellent solid-phase configuration, and to provide a method for producing the nanostructure through a vapor-phase synthesis method using no catalyst. SOLUTION: There is provided the method for producing the binary-alloy single crystal nanostructure by utilizing a vapor phase synthesis method using the oxides of metal elements composing a binary alloy, metal substances, metal halides or binary alloy substances as a precursor, and the nanostructure produced by the method is also disclosed. In more detail, the invention provides a method of fabricating a binary alloy nanowire or nanobelt which comprises placing a precursor on the front part of a reaction furnace and a substrate on the rear part of the furnace, and heat-treating both precursor and substrate under inert gas atmosphere, and in addition, a binary alloy nanowire or nanobelt fabricated by the above method. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing a wafer level flip chip package for manufacturing a flip chip package by directly coating two layers of liquid anisotropic conductive adhesive (ACA) and non-conductive adhesive (NCA) on a wafer. SOLUTION: The method of manufacturing the flip chip package includes a step (a) of applying and drying a non-conductive mixed solution containing insulative polymer resin, a curing agent, and an organic solvent on the upper portion of a wafer with a non-solder formed bump thereon to form a non-conductive layer, a step (b) of applying and drying the conductive mixed solution containing insulative polymer resin, curing agent, organic solvent, and conductive particles on the upper portion of the non-conductive layer to form an anisotropic conductive layer, a step (c) of forming respective semiconductor chips by dicing the wafer formed with the non-conductive layer and the anisotropic conductive layer, and a step (d) of flip chip connecting the semiconductor chips by arranging the semiconductor chips on the electrode on a substrate. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a polymer or a resist pattern in a three-dimensional asymmetric structure having various inclinations and shapes, and to provide a mold and a metal thin film pattern using the above pattern and an easy method for forming a metal pattern. SOLUTION: A polymer or a resist pattern in a three-dimensional asymmetric structure having various inclinations and shapes is obtained through steps of: (a) forming a photo-sensitive material film 410 by applying a photo-sensitive material on a substrate 400; (b) deciding an exposure section on the photo-sensitive material film; (c) disposing a refraction film 440 and a light diffusion film 430 at a route of light irradiating the photo-sensitive material film; and (d) forming a pattern on the photo-sensitive material film by projecting light on the exposure section of the photo-sensitive material film, wherein the light transmits the refraction film and the light diffusion film. A mold, a metal thin-film pattern and a metal pattern are easily obtained by using the above method. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a package of a fabric semiconductor device, in which, by using a fabric printed circuit board which consists of textile fabrics, sense of inconsistency can be minimized, and the package of the fabric semiconductor device can be easily mounted, and the productivity of the package of the fabric semiconductor device can be improved. SOLUTION: The package of the fabric semiconductor device comprises a fabric printed circuit board which has textile fabrics, and a lead part formed by patterning a conductive material on the textile fabrics; a semiconductor device which has an electrode connected to the lead part of the fabric printed circuit board; and a molding part which seals the fabric printed circuit board and the semiconductor device. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a nonvolatile memory cell and a manufacturing method therefor, where the influence on the adjacent cells when a unit cell operates can be minimized. SOLUTION: The nonvolatile memory cell has a substrate, a first oxide film formed on the active region of the substrate, a source and a drain formed within the active region, a charge storage part formed on the first oxide film, a second oxide film surrounding the charge storage part, and formed on the first oxide film, and a gate formed by surrounding the second oxide film. COPYRIGHT: (C)2008,JPO&INPIT