METHOD FOR OBTAINING TRANSVERSE UNIFORMITY DURING THIN FILM DEPOSITION ON EXTENDED SUBSTRATE
    201.
    发明申请
    METHOD FOR OBTAINING TRANSVERSE UNIFORMITY DURING THIN FILM DEPOSITION ON EXTENDED SUBSTRATE 审中-公开
    在扩展基片薄膜沉积时获得横向均匀性的方法

    公开(公告)号:WO1989007664A1

    公开(公告)日:1989-08-24

    申请号:PCT/US1989000525

    申请日:1989-02-09

    CPC classification number: C23C14/562 C23C14/0042 C23C14/54

    Abstract: Apparatus (10) for sputter depositing a layer of metal onto a latterally extended substrate (12) includes a substrate support, a deposition station (14), a downstream sensing assembly (58) and a computerized controller. The deposition station includes a cathode (16, 22) and anodes (28, 30) extending the width of the substrate (12). Gas supply is provided to each of a plurality of zones through a common distribution chamber (48) with a plurality of inlets which in combination cover the width of the substrate on which a thin film layer is to be deposited. The gas flow is directed through each anode into the plasma region and is individually controlled for each zone. The downstream sensing assembly (58) includes, for each zone, a four-point contact assembly (62) using four electrically conductive wheels (64, 66, 68, 70). Two of the wheels are used to apply current to the thin film and two are used to sense the resistance of it. This information is fed into the computer for use in controlling the gas flow into the deposition station, by zone.

    ZINC-BASED FILM MANIPULATION FOR AN OPTICAL FILTER
    207.
    发明公开
    ZINC-BASED FILM MANIPULATION FOR AN OPTICAL FILTER 审中-公开
    薄膜对锌基地,为的光学滤波器MANIPULATION

    公开(公告)号:EP2010948A1

    公开(公告)日:2009-01-07

    申请号:EP06803514.6

    申请日:2006-09-14

    CPC classification number: G02B5/284 C03C17/28 G02B5/282

    Abstract: An optical filter is formed of a layer stack that includes metallic layers (106, 107, 108 and 109) and dielectric layers (101 , 102, 103, 104 and 105), with at least one dielectric layer being defined by more than one zinc-based film (112, 114, 118 and 120). These zinc-based films have different percentages of zinc. The selections of the percentages are based upon the positions of the films within the dielectric layer. An unexpectedly low sheet resistance is available if the zinc-based film that immediately precedes forming a metallic layer has a percentage of zinc in the range of 80 percent to 100 percent. Process stabilization and manufacturing cost are provided by placing the percentage of the lower zinc-based film closer to 50 percent (25-75 percent). Process stabilization is further enhanced by providing an indium-based film (110 and 116) within the dielectric layer adjacent to the metallic layer.

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