公开(公告)号：KR1019930008021B1

公开(公告)日：1993-08-25

申请号：KR1019910010537

申请日：1991-06-25

Applicant: 한국전자통신연구원 ,  주식회사 케이티

Inventor： 백종태 ,  유종선 ,  남기수

IPC: H01L27/092

Abstract: The semiconductor having a improved-ohmic-contact is prepared by making contact holes on the substrate, forming 20-100μm thick first metal wiring of aluminium, removing n-type semiconductor except p-type by partial lithography, depositing 20-100μm thick barrier metal, making 500-1000μm thick second metal wiring on barrier metal, removing all area of metal except barriers by lithography to make p-type semiconductor/ first wiring metal/ barrier metal/ second wiring metal structure and n-type semiconductor/ barrier metal/ second wiring metal.

Abstract translation: 具有改进的欧姆接触的半导体通过在基板上形成接触孔来制备，形成厚度为20-100μm的铝的第一金属布线，通过部分光刻除去p型除去n型半导体，沉积20-100μm厚的阻挡金属 在阻挡金属上制造500-1000μm厚的第二金属布线，通过平版印刷除去障碍物以外的所有金属区域，使p型半导体/第一布线金属/阻挡金属/第二布线金属结构和n型半导体/阻挡金属/秒 接线金属。

公开(公告)号：KR1019930015062A

公开(公告)日：1993-07-23

申请号：KR1019910024261

申请日：1991-12-24

Applicant: 한국전자통신연구원 ,  주식회사 케이티

Inventor： 유종선 ,  백종태 ,  남기수

IPC: H01L21/335 ,  H01L29/78