Integrated photonics mode expander
    212.
    发明授权

    公开(公告)号:US10895686B2

    公开(公告)日:2021-01-19

    申请号:US15968454

    申请日:2018-05-01

    Abstract: A method of fabricating a waveguide mode expander includes providing a substrate including a waveguide, bonding a chiplet including multiple optical material layers in a mounting region adjacent an output end of the waveguide, and selectively removing portions of the chiplet to form tapered stages that successively increase in number and lateral size from a proximal end to a distal end of the chiplet. The first optical material layer supports an input mode substantially the same size as a mode exiting the waveguide. One or more of the overlying layers, when combined with the first layer, support a larger, output optical mode size. Each tapered stage of the mode expander is formed of a portion of a respective layer of the chiplet. The first layer and the tapered stages form a waveguide mode expander that expands an optical mode of light traversing the chiplet.

    Diffusion blocking layer for a compound semiconductor structure

    公开(公告)号:US10833480B2

    公开(公告)日:2020-11-10

    申请号:US16502929

    申请日:2019-07-03

    Abstract: A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer on the region. The undoped layer has a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.

    DIFFUSION BLOCKING LAYER FOR A COMPOUND SEMICONDUCTOR STRUCTURE

    公开(公告)号:US20200169063A1

    公开(公告)日:2020-05-28

    申请号:US16502929

    申请日:2019-07-03

    Abstract: A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer on the region. The undoped layer has a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.

    Wide shoulder, high order mode filter for thick-silicon waveguides

    公开(公告)号:US10295746B2

    公开(公告)日:2019-05-21

    申请号:US16115104

    申请日:2018-08-28

    Abstract: An optical filter for attenuating higher-order modes in an optical waveguide includes a shoulder slab formed of a first material having a first index of refraction and disposed on a second material having a second index of refraction, the first index of refraction being higher than the second index of refraction. The shoulder slab defines a near end having a first width, an intermediate section, adjacent to the first end section, and a far end section, adjacent to the intermediate section and opposite the first end section along a direction of beam propagation. The optical filter also includes a waveguide ridge, formed of the first material and disposed atop the shoulder slab, that traverses the shoulder slab, and is configured to guide light of a fundamental mode along the direction of beam propagation from the near end section to the far end section.

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