公开(公告)号：WO2009149213A2

公开(公告)日：2009-12-10

申请号：PCT/US2009/046176

申请日：2009-06-03

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC. ,  WEBSTER, James, Randolph ,  TU, Thanh, Nghia ,  YAN, Xiaoming ,  CHUNG, Won, Suk

Inventor： WEBSTER, James, Randolph ,  TU, Thanh, Nghia ,  YAN, Xiaoming ,  CHUNG, Won, Suk

IPC: B81C1/00

CPC classification number: B81B3/0008 ,  B81B2201/042 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/115 ,  G02B26/001 ,  Y10T428/24917

Abstract: Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.

Abstract translation: 提供了减轻设备的可移动部件的永久性粘附或静电的机电系统装置的制造方法。 该方法提供了具有改进和可再现的表面粗糙度的非晶硅牺牲层。 非晶硅牺牲层对于机电系统器件中常用的材料进一步表现出优异的附着性。

公开(公告)号：WO2009050209A2

公开(公告)日：2009-04-23

申请号：PCT/EP2008063897

申请日：2008-10-15

Applicant: EPCOS AG ,  VAN SCHAIJK ROBERTUS T F ,  ZIJLSTRA PIEBE ANNE ,  KOSTER RONALD ,  VAN DIJK PIETER SIMON

Inventor： VAN SCHAIJK ROBERTUS T F ,  ZIJLSTRA PIEBE ANNE ,  KOSTER RONALD ,  VAN DIJK PIETER SIMON

IPC: B81C1/00

CPC classification number: B81C1/0015 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81C2201/0107 ,  H01G5/16 ,  H01G13/00

Abstract: Method for manufacturing a capacitor on a substrate, the capacitor including a firstelectrode (5) and a second electrode (12; 25), the first and second electrodes being separated by a cavity (16; 32), the substrate including an insulating surface layer (3), the first electrode (5) being arranged on the insulating surface layer a first metal body (7a; 20) being adjacent to the first electrode and arranged as anchor of the second electrode (12; 25) the second electrode being arranged as a beam-shaped body (12; 25) located on the first metal body and above the first electrode; the cavity (16; 32) being laterally demarcated by a sidewall of the first metal body.

Abstract translation: 在基板上制造电容器的方法，所述电容器包括第一电极（5）和第二电极（12; 25），所述第一和第二电极由空腔（16; 32）分开，所述基板包括绝缘表面层 （3）中，所述第一电极（5）在所述绝缘表面层上布置有与所述第一电极相邻并且被布置为所述第二电极（12; 25）的锚定件的第一金属体（7a; 20），所述第二电极被布置 作为位于第一金属体上并在第一电极上方的梁状体（12; 25）; 空腔（16; 32）由第一金属体的侧壁横向划分。

公开(公告)号：WO2007100457A2

公开(公告)日：2007-09-07

申请号：PCT/US2007/003267

申请日：2007-02-07

Applicant: QUALCOMM INCORPORATED ,  CHOU, Chen-Jean ,  WU, Chun-Chen ,  BRINKLEY, Patrick, F.

Inventor： CHOU, Chen-Jean ,  WU, Chun-Chen ,  BRINKLEY, Patrick, F.

IPC: B81C1/00

CPC classification number: B81C99/004 ,  B81B2201/047 ,  B81C1/00714 ,  B81C2201/0107 ,  G02B26/001

Abstract: A method of fabricating a MEMS device includes conditioning of an insulating layer by applying a voltage across the insulating layer via a conductive sacrificial layer for a period of time, prior to removal of the conductive sacrificial layer. This conditioning process may be used to saturate or stabilize charge accumulated within the insulating layer. The resistance across the insulating layer may also be measured to detect possible defects in the insulating layer.

Abstract translation: 制造MEMS器件的方法包括在去除导电牺牲层之前，通过经由导电牺牲层在绝缘层上施加电压一段时间来调节绝缘层。 该调节过程可以用来饱和或稳定在绝缘层内累积的电荷。 也可以测量绝缘层上的电阻，以检测绝缘层中可能存在的缺陷。

公开(公告)号：WO2003043044A1

公开(公告)日：2003-05-22

申请号：PCT/US2002/035925

申请日：2002-11-08

Applicant: CONVENTOR, INCORPORATED ,  CUNNINGHAM, Shawn, J. ,  DEREUS, Dana, R. ,  SETT, Subham ,  TATIC-LUCIC, Svetlana

Inventor： CUNNINGHAM, Shawn, J. ,  DEREUS, Dana, R. ,  SETT, Subham ,  TATIC-LUCIC, Svetlana

IPC: H01H57/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: A movable, trilayered microcomponent (108) suspended over a substrate (102) is provided and includes a first electrically conductive layer (116) patterned to define a movable electrode (114). The first metal layer (116) is separated from the substrate (102) by a gap. The microcomponent (108) further includes a dielectric layer formed (112) on the first metal layer (116) and having an end fixed with respect to the substrate (102). Furthermore, the microcomponent (102) includes a second electrically conductive layer (120) formed on the dielectric layer (112) and patterned to define an electrode interconnect (124) for electrically communicating with the movable electrode (114).

Abstract translation: 提供悬挂在衬底102上的可移动的三层微元件108，并且包括图案化以限定可移动电极114的第一导电层116.第一金属层116与衬底102间隔开。 微组件108还包括在第一金属层116上形成的112并且具有相对于衬底102固定的端部的电介质层。此外，微组件102包括形成在电介质层112上的第二导电层120，并被图案化以限定 用于与可动电极114电连通的电极互连124。

公开(公告)号：WO2003043042A1

公开(公告)日：2003-05-22

申请号：PCT/US2002/035923

申请日：2002-11-08

Applicant: COVENTOR, INCORPORATED ,  CUNNINGHAM, Shawn, J. ,  DEREUS, Dana, R. ,  SETT, Subham ,  GILBERT, John, R.

Inventor： CUNNINGHAM, Shawn, J. ,  DEREUS, Dana, R. ,  SETT, Subham ,  GILBERT, John, R.

IPC: H01H37/52

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: MEMS device (100) having an electrothermal actuator (126) and release and a method for fabrication. According to one embodiment, a microscale switch (100) is provided and can include a substrate (102) and a stationary electrode (106) and stationary contact (104) formed on the substrate (102). The switch (100) can further include a movable microcomponent (108) suspended above the substrate (102). The microcomponent (108) can include a structural layer (112) including at least one end fixed with respect to the substrate (102). The microcomponent (108) can further include a movable electrode (118) spaced from the stationary electrode (106). The microcomponent (108) can include an electrothermal component (126) attached to the structural layer (112) and operable to produce heating for generating force for moving the structural layer (112).

Abstract translation: 具有电热致动器126和释放的MEMS装置100和制造方法。 根据一个实施例，提供微型开关100，并且可以包括衬底102和形成在衬底102上的固定电极106和固定触点104.开关100还可以包括悬浮在衬底102上方的可移动的微元件108.微组件 108可以包括包括相对于衬底102固定的至少一个端部的结构层112.微组件108还可以包括与固定电极106间隔开的可移动电极118.微组件108可以包括附接到结构的电热部件126 层112并且可操作以产生用于产生用于移动结构层112的力的加热。

公开(公告)号：WO2003042721A2

公开(公告)日：2003-05-22

申请号：PCT/US2002/035926

申请日：2002-11-08

Applicant: COVENTOR, INCORPORATED ,  CUNNINGHAM, Shawn, J. ,  TATIC-LUCIC, Sveltana

Inventor： CUNNINGHAM, Shawn, J. ,  TATIC-LUCIC, Sveltana

IPC: G02B

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first cnductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.

Abstract translation: 根据一个实施例，提供一种制造三层梁的方法。 该方法可以包括在衬底上沉积牺牲层并在牺牲层上沉积第一导电层。 该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。 此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且通过结构层形成通孔到第一电导微结构。 此外，该方法可以包括以下：在结构层和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 并且去除足够量的牺牲层以便将第一导电微结构与衬底分开，其中结构层在第一端由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。

公开(公告)号：WO02057179A2

公开(公告)日：2002-07-25

申请号：PCT/IB0200154

申请日：2002-01-11

Applicant: IBM ,  DESPONT MICHEL ,  DRECHSLER UTE ,  MAGNUSON ROY H

Inventor： DESPONT MICHEL ,  DRECHSLER UTE ,  MAGNUSON ROY H

IPC: B81B3/00 ,  B81C1/00 ,  C23F13/14 ,  H01L21/306

CPC classification number: H01L21/30604 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C1/00801 ,  B81C2201/0107 ,  B81C2201/0114 ,  B81C2201/0133 ,  C23F13/14

Abstract: A method for protecting a material of a microstructure comprising said material and a noble metal layer (8) against undesired galvanic etching during manufacture comprises forming on the structure a sacrificial metal layer (12) having a lower redox potential than said material, the sacrificial metal layer (12) being electrically connected to said noble metal layer (8).

Abstract translation: 一种用于在制造过程中保护包含所述材料的微结构材料和贵金属层（8）的方法，用于防止不期望的电化学蚀刻，包括在所述结构上形成具有比所述材料更低氧化还原电位的牺牲金属层（12），所述牺牲金属 层（12）电连接到所述贵金属层（8）。

公开(公告)号：KR1020140074926A

公开(公告)日：2014-06-18

申请号：KR1020147009202

申请日：2012-08-27

Applicant: 퀄컴 엠이엠에스 테크놀로지스, 인크.

Inventor： 스테파노우,필립제이슨 ,  론데르간,안나랑겔로바 ,  고우세브,이브게니페트로비치 ,  셰노이,라빈드라바맨

IPC: B81C1/00 ,  C25D5/10 ,  C25D5/18 ,  C23C28/02 ,  H01L21/28

CPC classification number: B81C1/0038 ,  B81B2203/0392 ,  B81C2201/0107 ,  B81C2201/0188 ,  B81C2201/038 ,  C23C18/1653 ,  C25D5/10 ,  C25D5/18 ,  C25D5/48 ,  C25D7/00 ,  Y10T428/12493 ,  Y10T428/24612

Abstract: 본 개시물은 하이 표면 영역 스택된 층진 금속 구조들, 디바이스들, 장치, 시스템들 및 관련된 방법들의 구현들을 제공한다. 기판상의 복수의 스택된 층들은 제 1 금속 및 제 2 금속을 포함하는 플레이팅 배스로부터 제조될 수 있다. 변조되는 플레이팅 전류는 교번하는 제 1 금속 층들 및 합금 층들을 증착할 수 있으며, 합금 층들은 제 1 금속 및 제 2 금속을 포함한다. 합금 층들 사이의 갭들은 스택된 층진 구조를 정의하기 위해 제 1 금속 층들의 일부 부분들을 선택적으로 에칭함으로써 형성될 수 있다. 스택된 층진 구조들은 커패시터들, 인덕터들, 촉매 반응기들, 열 전달 튜브들, 비-선형 스프링들, 필터들, 배터리들 및 중금속 정화기들을 형성하기 위해 애플리케이션들에서 유용할 수 있다.

公开(公告)号：KR100495603B1

公开(公告)日：2005-06-16

申请号：KR1020037009356

申请日：2002-01-11

Applicant: 인터내셔널 비지네스 머신즈 코포레이션

Inventor： 데스폰트,마이클 ,  드레츠슬레르,우테 ,  매그너슨,로이,에이치.

IPC: B81B3/00

CPC classification number: H01L21/30604 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C1/00801 ,  B81C2201/0107 ,  B81C2201/0114 ,  B81C2201/0133 ,  C23F13/14

Abstract: 한 물질과 귀금속 층(8)을 포함하는 마이크로구조의 상기 물질을, 제조 중 원하지 않는 갈바닉 에칭으로부터 보호하기 위한 방법으로서, 상기 마이크로구조 상에 상기 물질보다 낮은 산화환원 전위를 갖고 상기 귀금속 층(8)에 전기적으로 접속되는 희생 금속 층(12)을 형성하는 단계를 포함한다.

公开(公告)号：KR100419233B1

公开(公告)日：2004-02-21

申请号：KR1020020012985

申请日：2002-03-11

Applicant: 삼성전자주식회사

Inventor： 이은성 ,  김정우 ,  송인상 ,  김종석 ,  이문철

IPC: B81C1/00

CPC classification number: B81B3/0078 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2203/04 ,  B81C2201/0107 ,  B81C2201/014 ,  H01H59/0009

Abstract: A method for fabricating a MEMS device having a fixing part, driving part, electrode part, and contact parts on a substrate. A driving electrode is formed on the substrate, and then an insulation layer is formed thereon. The insulation layer is patterned, and the regions of the insulation layer in which the fixing part and the contact parts are formed are etched. A metal layer is formed on the substrate. The metal layer is planarized down to the insulation layer, and the driving electrode is formed. A sacrificial layer is formed on the substrate, and a groove-shaped space is formed in a region in which the fixing part is formed. A MEMS structure layer is formed on the sacrificial layer. Sidewalls are formed in the groove-shaped space, and the fixing part and driving part are formed, leaving the sacrificial layer underneath the fixing part.

Abstract translation: 一种用于制造MEMS器件的方法，所述MEMS器件在基板上具有固定部分，驱动部分，电极部分和接触部分。 在基板上形成驱动电极，然后在其上形成绝缘层。 对绝缘层进行图案化，并且蚀刻其中形成有固定部分和接触部分的绝缘层的区域。 在衬底上形成金属层。 金属层被平坦化到绝缘层，并形成驱动电极。 牺牲层形成在基板上，并且在形成固定部的区域中形成槽状空间。 MEMS结构层形成在牺牲层上。 在槽形空间中形成侧壁，形成固定部分和驱动部分，在固定部分的下面留下牺牲层。 ＆lt;图像＆GT;