公开(公告)号：US20220091330A1

公开(公告)日：2022-03-24

申请号：US17540626

申请日：2021-12-02

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic BOEUF ,  Charles BAUDOT

IPC: G02B6/12 ,  G02B6/30 ,  G02B6/124 ,  G02B6/122 ,  G02B6/126 ,  G02B6/27

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

公开(公告)号：US11251175B2

公开(公告)日：2022-02-15

申请号：US16562963

申请日：2019-09-06

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexandre Ayres ,  Bertrand Borot

IPC: H01L27/32 ,  H01L27/02 ,  G06F30/39 ,  G06F30/394 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L27/088

Abstract: A three-dimensional integrated structure is formed by a first substrate with first components oriented in a first direction and a second substrate with second components oriented in a second direction. An interconnection level includes electrically conducting tracks that run in a third direction. One of the second direction and third direction forms a non-right and non-zero angle with the first direction. An electrical link formed by at least one of the electrically conducting tracks electrically connected two points of the first or of the second components.

公开(公告)号：US20220013681A1

公开(公告)日：2022-01-13

申请号：US17486219

申请日：2021-09-27

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles BAUDOT ,  Sebastien CREMER ,  Nathalie VULLIET ,  Denis PELLISSIER-TANON

IPC: H01L31/109 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/105

Abstract: A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.

公开(公告)号：US20220005850A1

公开(公告)日：2022-01-06

申请号：US17363345

申请日：2021-06-30

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alain INARD ,  Marios BARLAS

IPC: H01L27/146 ,  H01L31/0232

Abstract: An optoelectronic device includes a photodiode. At least a portion of an active area of the photodiode is separated from a neighboring photodiode by a first wall including a conductive core and an insulating sheath and by a second optical insulation wall. The first wall and second optical insulation wall further extend parallel to each other and separate the active area from a memory area of the photodiode.

公开(公告)号：US20220004076A1

公开(公告)日：2022-01-06

申请号：US17476668

申请日：2021-09-16

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frédéric Boeuf ,  Cyrille Barrera

IPC: G02F1/225 ,  G02F1/025 ,  G02F1/035

Abstract: A capacitive electro-optical modulator includes a silicon layer having a cavity having sidewalls and a floor. A germanium or silicon-germanium strip overlies the silicon layer within the cavity. A silicon strip overlies the germanium or silicon-germanium strip within the cavity. The silicon strip is wider than the germanium or silicon-germanium strip. An insulator fills the cavity laterally adjacent the germanium or silicon-germanium strip and the silicon strip and extending between the sidewalls of the cavity. An upper insulating layer overlies the silicon strip and the insulator. A layer of III-V material overlies the upper insulating layer. The layer of III-V material formed as a third strip is arranged facing the silicon strip and separated therefrom by a portion of the upper insulating layer.

公开(公告)号：US20220003932A1

公开(公告)日：2022-01-06

申请号：US17476152

申请日：2021-09-15

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Patrick Le Maitre ,  Nicolas Michit

IPC: G02B6/293 ,  G02B6/12 ,  G02F1/225

Abstract: A ring resonator electro-optical device includes a first silicon nitride waveguide and a second annular silicon waveguide that comprises a first section running under a second section of the first waveguide. The second waveguide also includes an annular silicon strip having a cross-section increasing in the first section from a minimum cross-section located under the second section.

公开(公告)号：US11199731B2

公开(公告)日：2021-12-14

申请号：US17064385

申请日：2020-10-06

Applicant: STMicroelectronics (Crolles 2) SAS ,  Commissariat a l'Energie Atomique et aux Energies Alternatives

Inventor： Patrick Le Maitre ,  Nicolas Michit ,  Jean-Francois Carpentier ,  Benoit Charbonnier

IPC: G01R19/30 ,  G02B6/12 ,  G02F1/01 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/105 ,  G02F1/025

Abstract: A device, includes: a ring waveguide; a diode comprising a junction extending at least partly in the ring waveguide; and a first circuit configured to supply a signal representative of a leakage current in the diode.

公开(公告)号：US20210382189A1

公开(公告)日：2021-12-09

申请号：US17408679

申请日：2021-08-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Gilles GASIOT ,  Fady ABOUZEID

IPC: G01T1/24 ,  H01L27/07 ,  H01L31/103

Abstract: A diode and a transistor are connected in parallel. The transistor is located on a first doped region forming a PN junction of the diode with a second doped region located under the first region. The circuit functions as an ionizing radiation detection cell by generating a current through the PN junction which changes by a voltage generated across the transistor. This change in voltage is compared to a threshold to detect the ionizing radiation.

公开(公告)号：US11195872B2

公开(公告)日：2021-12-07

申请号：US16547231

申请日：2019-08-21

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Stephane Hulot ,  Andrej Suler ,  Nicolas Virollet

IPC: H01L27/146

Abstract: A semiconductor image sensor includes a plurality of pixels. Each pixel of the sensor includes a semiconductor substrate having opposite front and back sides and laterally delimited by a first insulating wall including a first conductive core insulated from the substrate, electron-hole pairs being capable of forming in the substrate due to a back-side illumination. A circuit is configured to maintain, during a first phase in a first operating mode, the first conductive core at a first potential and to maintain, during at least a portion of the first phase in a second operating mode, the first conductive core at a second potential different from the first potential.

公开(公告)号：US20210376170A1

公开(公告)日：2021-12-02

申请号：US17324619

申请日：2021-05-19

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Didier DUTARTRE

IPC: H01L31/028 ,  G01S7/4865 ,  H01L27/146 ,  H01L31/103

Abstract: An integrated optical sensor is formed by a pinned photodiode. A semiconductor substrate includes a first semiconductor region having a first type of conductivity located between a second semiconductor region having a second type of conductivity opposite to the first type one and a third semiconductor region having the second type of conductivity. The third semiconductor region is thicker, less doped and located deeper in the substrate than the second semiconductor region. The third semiconductor region includes both silicon and germanium. In one implementation, the germanium within the third semiconductor region has at least one concentration gradient. In another implementation, the germanium concentration within the third semiconductor region is substantially constant.