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公开(公告)号:US20220140110A1
公开(公告)日:2022-05-05
申请号:US17574329
申请日:2022-01-12
Applicant: STMICROELECTRONICS, INC.
Inventor: John H. ZHANG
IPC: H01L29/66 , H01L29/775 , H01L21/66 , H01L29/45 , H01L29/778 , H01L29/41 , H01L21/265 , H01L21/8238
Abstract: Incorporation of metallic quantum dots (e.g., silver bromide (AgBr) films) into the source and drain regions of a MOSFET can assist in controlling the transistor performance by tuning the threshold voltage. If the silver bromide film is rich in bromine atoms, anion quantum dots are deposited, and the AgBr energy gap is altered so as to increase Vt. If the silver bromide film is rich in silver atoms, cation quantum dots are deposited, and the AgBr energy gap is altered so as to decrease Vt. Atomic layer deposition (ALD) of neutral quantum dots of different sizes also varies Vt. Use of a mass spectrometer during film deposition can assist in varying the composition of the quantum dot film. The metallic quantum dots can be incorporated into ion-doped source and drain regions. Alternatively, the metallic quantum dots can be incorporated into epitaxially doped source and drain regions.
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公开(公告)号:US11320452B2
公开(公告)日:2022-05-03
申请号:US16452904
申请日:2019-06-26
Applicant: STMicroelectronics, Inc. , STMicroelectronics S.r.l.
Inventor: Yamu Hu , David McClure , Alessandro Tocchio , Naren K. Sahoo , Anthony Junior Casillan
Abstract: A microelectromechanical system (MEMS) accelerometer sensor has a mobile mass and a sensing capacitor. To self-test the sensor, a test signal is applied to the sensing capacitor during a reset phase of a sensing circuit coupled to the sensing capacitor. The test signal is configured to cause an electrostatic force which produces a physical displacement of the mobile mass corresponding to a desired acceleration value. Then, during a read phase of the sensing circuit, a variation in capacitance of sensing capacitor due to the physical displacement of the mobile mass is sensed. This sensed variation in capacitance is converted to a sensed acceleration value. A comparison of the sensed acceleration value to the desired acceleration value provides an indication of an error in operation of the MEMS accelerometer sensor if the sensed acceleration value and desired acceleration value are not substantially equal.
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公开(公告)号:US11308979B2
公开(公告)日:2022-04-19
申请号:US17158817
申请日:2021-01-26
Inventor: Mahesh Chowdhary , Arun Kumar , Ghanapriya Singh , Rajendar Bahl
Abstract: A method and apparatus for classifying a spatial environment as open or enclosed are provided. In the method and apparatus, one or more microphones detect ambient sound in a spatial environment and output an audio signal representative of the ambient sound. A processor determines a spatial environment impulse response (SEIR) for the audio signal and extracts one or more features of the SEIR. The processor classifies the spatial environment as open or enclosed based on the one or more features of the SEIR.
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公开(公告)号:US20220102166A1
公开(公告)日:2022-03-31
申请号:US17546960
申请日:2021-12-09
Applicant: STMicroelectronics, Inc.
Inventor: Jefferson Talledo , Frederick Ray Gomez
Abstract: Embodiments of the present disclosure are directed to a leadframe package with recesses formed in outer surface of the leads. The recesses are filled with a filler material, such as solder. The filler material in the recesses provides a wetable surface for filler material, such as solder, to adhere to during mounting of the package to another device, such as a printed circuit board (PCB). This enables strong solder joints between the leads of the package and the PCB. It also enables improved visual inspection of the solder joints after the package has been mounted.
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公开(公告)号:US11264286B2
公开(公告)日:2022-03-01
申请号:US16445778
申请日:2019-06-19
Applicant: STMicroelectronics, Inc.
Inventor: Nicolas Loubet , Pierre Morin , Yann Mignot
IPC: H01L29/78 , H01L21/8238 , H01L27/092 , H01L29/165 , H01L21/02 , H01L21/762 , H01L29/49 , H01L29/06 , H01L29/417
Abstract: Integrated circuits are disclosed in which the strain properties of adjacent pFETs and nFETs are independently adjustable. The pFETs include compressive-strained SiGe on a silicon substrate, while the nFETs include tensile-strained silicon on a strain-relaxed SiGe substrate. Adjacent n-type and p-type FinFETs are separated by electrically insulating regions formed by a damascene process. During formation of the insulating regions, the SiGe substrate supporting the n-type devices is permitted to relax elastically, thereby limiting defect formation in the crystal lattice of the SiGe substrate.
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公开(公告)号:US20220034659A1
公开(公告)日:2022-02-03
申请号:US17504994
申请日:2021-10-19
Applicant: STMicroelectronics, Inc.
Inventor: Deyou FANG , Chao-Ming TSAI , Milad ALWARDI , Yamu HU , David MCCLURE
IPC: G01C19/5726 , G01C25/00 , G01C19/5733
Abstract: A microelectromechanical system (MEMS) gyroscope includes a driving mass and a driving circuit that operates to drive the driving mass in a mechanical oscillation at a resonant drive frequency. An oscillator generates a system clock that is independent of and asynchronous to the resonant drive frequency. A clock generator circuit outputs a first clock and a second clock that are derived from the system clock. The drive loop of the driving circuit including an analog-to-digital converter (ADC) circuit that is clocked by the first clock and a digital signal processing (DSP) circuit that is clocked by the second clock.
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公开(公告)号:US20220030667A1
公开(公告)日:2022-01-27
申请号:US17472247
申请日:2021-09-10
Inventor: Fuchao WANG , Olivier LENEEL , Ravi SHANKAR
Abstract: An integrated circuit is provided having an active circuit. A heating element is adjacent to the active circuit and configured to heat the active circuit. A temperature sensor is also adjacent to the active circuit and configured to measure a temperature of the active circuit. A temperature controller is coupled to the active circuit and configured to receive a temperature signal from the temperature sensor. The temperature controller operates the heating element to heat the active circuit to maintain the temperature of the active circuit in a selected temperature range.
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公开(公告)号:US11227776B2
公开(公告)日:2022-01-18
申请号:US15392909
申请日:2016-12-28
Applicant: STMicroelectronics, Inc.
Inventor: Jefferson Talledo , Frederick Ray Gomez
IPC: H01L21/44 , H01L21/48 , H01L23/495 , H05K1/11 , H01L23/00 , H05K1/18 , H01L21/54 , H01L21/78 , H01L23/31 , H01L21/56
Abstract: Embodiments of the present disclosure are directed to a leadframe package with recesses formed in outer surface of the leads. The recesses are filled with a filler material, such as solder. The filler material in the recesses provides a wetable surface for filler material, such as solder, to adhere to during mounting of the package to another device, such as a printed circuit board (PCB). This enables strong solder joints between the leads of the package and the PCB. It also enables improved visual inspection of the solder joints after the package has been mounted.
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公开(公告)号:US20210391356A1
公开(公告)日:2021-12-16
申请号:US17159013
申请日:2021-01-26
Applicant: STMICROELECTRONICS, INC.
Inventor: John H. ZHANG
IPC: H01L27/12 , H01L29/66 , H01L27/11 , H01L27/092 , H01L29/161 , H01L29/78 , H01L23/528 , H01L27/112 , H01L21/84 , H01L21/266 , H01L21/8238 , H01L29/06
Abstract: Single gate and dual gate FinFET devices suitable for use in an SRAM memory array have respective fins, source regions, and drain regions that are formed from portions of a single, contiguous layer on the semiconductor substrate, so that STI is unnecessary. Pairs of FinFETs can be configured as dependent-gate devices wherein adjacent channels are controlled by a common gate, or as independent-gate devices wherein one channel is controlled by two gates. Metal interconnects coupling a plurality of the FinFET devices are made of a same material as the gate electrodes. Such structural and material commonalities help to reduce costs of manufacturing high-density memory arrays.
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260.
公开(公告)号:US11199410B2
公开(公告)日:2021-12-14
申请号:US16399829
申请日:2019-04-30
Applicant: STMICROELECTRONICS, INC.
Inventor: Mahaveer Jain , Mahesh Chowdhary
Abstract: A device including microelectromechanical systems (MEMS) sensors is used in dead reckoning in conditions where Global Positioning System (GPS) signals or Global Navigation Satellite System (GNSS) signals are lost. The device is capable of tracking the location of the device after the GPS/GNSS signals are lost by using MEMS sensors such as accelerometers and gyroscopes. By calculating a misalignment angle between a sensor frame of the device with either the movement direction of the vehicle or the walking direction of a pedestrian using the MEMS sensors, the device can accurately calculate the location of a user of the device even without the GPS/GNSS signals. Accordingly, a device capable of tracking the location of a pedestrian and a user riding in a vehicle without utilizing GPS/GNSS signals can be provided.
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