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    Microsystem with element deformable by the action of heat-actuated device
    261.
    发明授权
    Microsystem with element deformable by the action of heat-actuated device 有权
    微系统通过热驱动装置的作用可变形

    公开(公告)号：US06812820B1

    公开(公告)日：2004-11-02

    申请号：US09554272

    申请日：2000-06-06

    Applicant: Yves Fouillet

    Inventor： Yves Fouillet

    IPC: H01H3732

    CPC classification number: H01H1/0036 ,  B81B3/0024 ,  B81B2201/016 ,  B81B2201/032 ,  H01G5/16 ,  H01H2001/0042 ,  H01H2037/008 ,  Y10T29/42 ,  Y10T29/49105 ,  Y10T29/49117 ,  Y10T29/49124 ,  Y10T29/49128 ,  Y10T29/49155

    Abstract: The invention concerns a microsystem, in particular for producing microswitches or microvalves, constituted on a substrate (50) and used for producing a shift between a first operating state and a second operating state by means of a heat actuated device with bi-metal switch effect. The heat-actuated device comprises a deformable element (51) connected, by opposite ends, to the substrate (50) so as to present naturally a deflection without stress relative to the substrate surface which faces it, said natural deflection determining the first operating state, the second operating state being produced by the heat-actuated device which induces, by the effect of temperature variation, a deformation of the deformable element (51) tending to reduce its deflection and submitting it to a compressive stress by buckling effect in a direction opposite to its natural deflection.

    Abstract translation: 本发明涉及一种微系统，特别是用于制造微型开关或微型阀，其构造在基板（50）上并用于通过具有双金属开关效应的热致动装置在第一操作状态和第二操作状态之间产生换档 。 热致动装置包括通过相对端连接到基板（50）的可变形元件（51），以便相对于面向其的基板表面自然地呈现不受应力的偏转，所述自然偏转确定第一操作状态 所述第二操作状态由所述热驱动装置产生，所述热致动装置通过温度变化而引起所述可变形元件（51）的变形，所述变形元件倾向于减小其偏转，并且通过在方向上的屈曲效应使其变形为压缩应力 与其自然变形相反。

    Membrane for micro-electro-mechanical switch, and methods of making and using it
    262.
    发明授权
    Membrane for micro-electro-mechanical switch, and methods of making and using it 有权
    微机电开关薄膜及其制造和使用方法

    公开(公告)号：US06803534B1

    公开(公告)日：2004-10-12

    申请号：US09866205

    申请日：2001-05-25

    Applicant: Shea Chen ,  Brandon W. Pillans ,  John C. Ehmke ,  Zhimin Jamie Yao

    Inventor： Shea Chen ,  Brandon W. Pillans ,  John C. Ehmke ,  Zhimin Jamie Yao

    IPC: B81B300

    CPC classification number: B81B3/0008 ,  B81B2201/016 ,  H01G5/16 ,  H01H1/0036 ,  H01H59/0009 ,  H01H2001/0084

    Abstract: A micro-electro-mechanical (MEMS) switch (10, 110) has an electrode (22, 122) covered by a dielectric layer (23, 123), and has a flexible conductive membrane (31, 131) which moves between positions spaced from and engaging the dielectric layer. At least one of the membrane and dielectric layer has a textured surface (138) that engages the other thereof in the actuated position. The textured surface reduces the area of physical contact through which electric charge from the membrane can tunnel into and become trapped within the dielectric layer. This reduces the amount of trapped charge that could act to latch the membrane in its actuated position, which in turn effects a significant increase in the operational lifetime of the switch.

    Abstract translation: 微机电开关（10,110,120）被称为MEMS，并且包括具有两个间隔开的导电柱（17,18）的基部（13,14,17-18）。导电部分（22 ）被提供在柱之间并被介电层（23）覆盖。膜（31,131,231）在柱之间延伸并且具有间隔开的膨胀部分（41-42,141-142,241-242），其有助于纵向膨胀 膜在其中心部分分别与电介质层间隔开并与其接合的位置之间弯曲。 一种制造开关的方法包括：提供具有对应于膨胀部分的槽或脊的顶表面的间隔材料（76,171,177,178），将膜沉积在间隔物的顶表面上，然后移除间隔物材料。

    Switchable capacitor and method of making the same
    263.
    发明申请
    Switchable capacitor and method of making the same 有权
    可切换电容器及其制作方法

    公开(公告)号：US20040124497A1

    公开(公告)日：2004-07-01

    申请号：US10663340

    申请日：2003-09-15

    Inventor： Xavier Rottenberg ,  Henri Jansen ,  Hendrikus Tilmans ,  Walter De Raedt

    IPC: H01L029/00

    CPC classification number: H01H59/0009 ,  B81B3/001 ,  B81B2201/016 ,  B81C2201/115 ,  H01G5/16 ,  H01G5/18

    Abstract: A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom electrode, a dielectric layer deposited on at least part of said bottom electrode, a conductive floating electrode deposited on at least part of said dielectric layer, an armature positioned proximate to the floating electrode and a first actuation area in order to stabilize the down state position of the armature. The device may furthermore comprise a second actuation area. The present invention provides shunt switches and series switches with actuation in zones attached to the floating electrode area or with relay actuation.

    Abstract translation: 公开了一种微机电可切换电容器，包括衬底，底电极，沉积在所述底电极的至少一部分上的电介质层，沉积在所述介电层的至少一部分上的导电浮动电极，位于浮动 电极和第一致动区域，以便稳定电枢的向下状态位置。 该装置还可以包括第二致动区域。 本发明提供了分流开关和串联开关，其在附接到浮动电极区域的区域中具有致动，或者具有继电器致动。

    Method of fabricating micro-electromechanical switches on CMOS compatible substrates
    264.
    发明授权
    Method of fabricating micro-electromechanical switches on CMOS compatible substrates 有权
    在CMOS兼容基板上制造微机电开关的方法

    公开(公告)号：US06635506B2

    公开(公告)日：2003-10-21

    申请号：US10014660

    申请日：2001-11-07

    Applicant: Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

    Inventor： Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

    IPC: H01L2100

    CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

    Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

    Abstract translation: 描述了使用兼容工艺和材料制造与常规半导体互连级别集成的微机电开关（MEMS）的方法。 该方法基于制造容易修改以产生用于接触切换和任何数量的金属 - 介电金属开关的各种配置的电容开关。 该过程开始于铜镶嵌互连层，由金属导体嵌入电介质中。 铜互连的全部或部分凹陷到足以在开关处于闭合状态时提供电容气隙的程度，并为例如Ta / TaN的保护层提供空间。 在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束并且提供一个或多个路径用于开关信号横越。 气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。 代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。 下一层是另一介质层，其被沉积到形成在下电极和形成开关器件的可移动梁之间的间隙的期望厚度上。 通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。 然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。 然后用牺牲脱模材料填充空腔。 然后将该释放材料与电介质的顶部平坦化，由此提供构造波束层的平坦表面。

    Bistable actuation techniques, mechanisms, and applications
    266.
    发明申请
    Bistable actuation techniques, mechanisms, and applications 失效
    双稳态致动技术，机构和应用

    公开(公告)号：US20030029705A1

    公开(公告)日：2003-02-13

    申请号：US10052667

    申请日：2002-01-18

    Applicant: Massachusetts Institute of Technology

    Inventor： Jin Qiu ,  Alexander H. Slocum ,  Jeffrey H. Lang ,  Ralf Struempler ,  Michael P. Brenner ,  Jian Li

    IPC: H01H057/00

    CPC classification number: B81B3/0051 ,  B33Y70/00 ,  B33Y80/00 ,  B81B2201/016 ,  B81B2203/0109 ,  B81B2203/051 ,  H01H1/0036 ,  H01H1/24 ,  H01H50/005 ,  H01H59/0009 ,  H01H61/00 ,  H01H2001/0042 ,  H01H2061/006

    Abstract: A bistable structure provided by the invention is characterized as including a deflection element that has mechanically constrained end points and a compliant span between the end points that is substantially free to deflect between two stable positions when a force is applied at a point along the span. The deflection element span is provided, as-fabricated, curved in one of the two stable positions and in a mechanically unstressed condition along the length of the span. The as-fabricated curve of the deflection element span includes a curve maxima at a point along the span length that is at least about null of the span length from the end points of the span. The deflection element span is constrained to substantially prohibit development of a second bending mode that is characteristic for the span as the element deflects between the two stable positions.

    Abstract translation: 由本发明提供的双稳态结构的特征在于包括一个偏转元件，该偏转元件具有机械约束的端点和端点之间的顺应跨度，当在沿跨度的点施加力时，基本上自由地在两个稳定位置之间偏转。 偏转元件跨度设置成沿着跨度的长度在两个稳定位置中的一个中并且以机械无应力状态弯曲。 偏转元件跨度的制造曲线包括沿着跨度长度的点处的曲线最大值，其距离跨度端点的跨度长度的至少约1/4。 偏转元件跨度被限制为基本上禁止当元件在两个稳定位置之间偏转时跨度的特征的第二弯曲模式的发展。

    MICRO-RELAY AND METHOD FOR MANUFACTURING THE SAME
    268.
    发明申请
    MICRO-RELAY AND METHOD FOR MANUFACTURING THE SAME 有权
    微型继电器及其制造方法

    公开(公告)号：US20020008444A1

    公开(公告)日：2002-01-24

    申请号：US09254030

    申请日：1999-02-26

    Inventor： MINORU SAKATA ,  TAKUYA NAKAJIMA ,  TOMONORI SEKI ,  TERUHIKO FUJIWARA ,  MASASHI TAKEUCHI

    IPC: H01L041/04

    CPC classification number: H01H1/0036 ,  B81B7/0077 ,  B81B2201/016 ,  B81B2207/095 ,  B81C2203/0118 ,  H01H1/20 ,  H01H9/52 ,  H01H57/00 ,  H01H59/0009 ,  H01H61/02 ,  H01H67/22 ,  H01H2001/0042 ,  H01H2001/0084 ,  H01H2057/006 ,  H01H2061/006

    Abstract: A thin plate-shaped substrate 21 comprised of a monocrystal is provided with a piezoelectric element 24, and both ends of a movable piece 20 whose one surface is provided with a movable contact 25 are fixed and supported to a base 11. Then, by curving the movable piece 20 via the piezoelectric element 24, the movable contact 25 is brought in and out of contact with a pair of fixed contacts 38 and 39 that face the movable contact. With this arrangement, a subminiature micro-relay having a mechanical contact mechanism that has a small resistance in turning on the contact and the desired vibration resistance, frequency characteristic and insulating property can be obtained.

    Abstract translation: 由单晶构成的薄板状基板21设置有压电元件24，并且其一个表面设置有可动触点25的可动件20的两端固定并支撑在基座11上。然后，通过弯曲 经由压电元件24的可动片20与可动触点对置的一对固定触点38,39接触而脱离接触。 通过这种布置，可以获得具有机械接触机构的小型微型继电器，其具有接通触点的小电阻和期望的振动阻抗，频率特性和绝缘性能。

    Bistable micromechanical switches
    269.
    发明授权
    Bistable micromechanical switches 有权
    双稳态微机械开关

    公开(公告)号：US06239685B1

    公开(公告)日：2001-05-29

    申请号：US09418011

    申请日：1999-10-14

    Applicant: Thomas Robert Albrecht ,  Timothy Clark Reiley

    Inventor： Thomas Robert Albrecht ,  Timothy Clark Reiley

    IPC: H01H3746

    CPC classification number: G11C23/00 ,  B81B3/0024 ,  B81B2201/016 ,  B81B2201/032 ,  G11B5/40 ,  G11B19/04 ,  H01H1/0036 ,  H01H1/20 ,  H01H37/52 ,  H01H2001/0042 ,  H01H2001/0084 ,  H01H2037/008

    Abstract: A bistable micromechanical switch that includes a substrate, at least two anchor points formed on the substrate, and a beam structure that includes a two-material beam attached to at least two anchor points. The two-material beam has a first portion, a second portion and a center portion. The first portion of the two-material beam is formed from a first layer of a first material and a second layer of a second material such that the first layer of the first portion is proximate to the surface of the substrate and the second layer of the first portion is remote from the surface of the substrate. The first material has a first coefficient of thermal expansion and the second material has a second coefficient of thermal expansion such that the second coefficient of thermal expansion is greater than the first coefficient of thermal expansion. The second portion of the two-material beam is formed from a first layer of the second material and a second layer of the first material such that the first layer of the second portion is proximate to the surface of the substrate and the second layer of the second portion is remote from the surface of the substrate. The beam structure has a first and a second stable state such that the center portion of the beam structure is deflected toward the surface of the substrate for the first stable state and is deflected away from the surface of the substrate for the second stable state.

    Abstract translation: 一种双稳态微机械开关，其包括基板，形成在基板上的至少两个锚定点以及包括连接到至少两个锚定点的双材料梁的梁结构。 双材料梁具有第一部分，第二部分和中心部分。 双材料束的第一部分由第一材料的第一层和第二材料的第二层形成，使得第一部分的第一层靠近衬底的表面，并且第二层的第二层 第一部分远离基板的表面。 第一材料具有第一热膨胀系数，第二材料具有第二热膨胀系数，使得第二热膨胀系数大于第一热膨胀系数。 双材料束的第二部分由第二材料的第一层和第一材料的第二层形成，使得第二部分的第一层靠近基板的表面，并且第二层的第二层 第二部分远离基板的表面。 梁结构具有第一和第二稳定状态，使得梁结构的中心部分朝向基板的表面偏转第一稳定状态，并且偏转离开基板的表面用于第二稳定状态。

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