Abstract:
A phase change memory device comprising an electrode, a phase change layer crossing and contacting the electrode at a cross region thereof, and a transistor comprising a source and a drain, wherein the drain of the transistor electrically connects the electrode or the phase change layer is disclosed.
Abstract:
The invention provides a phase change memory device comprising a stacked structure disposed on a substrate. The stacked structure comprises a first electrode, a second electrode overlying the first electrode and an insulating layer interposed between the first and the second electrodes. A memory spacer is formed on part of the sidewall of the stacked structure to contact the first electrode, the insulating layer and the second electrode.
Abstract:
An apparatus of a magnetoresistance sensor consisting of a substrate, a conductive unit on the substrate, and a magnetoresistance structure on the conductive unit is provided. The conductive unit includes a first surface and a second surface opposite to each other, and the first surface faces the substrate. The magnetoresistance structure is formed on the second surface of the conductive unit and is electrically connected to the conductive unit. The magnetoresistance sensor has high performance and reliability. A magnetoresistance sensor fabricating method based on this apparatus is also provided.
Abstract:
A multi-blocks radio access method is provided and includes the following steps. A plurality of resource blocks are grouped into a plurality of groups. One resource block is respectively selected from the groups to form a plurality of resource block sets. Data to be accessed are transmitted in corresponding one of the resource block sets. A code division multiplexing code sequence is determined for the corresponding one of the resource block sets according to at least one of a plurality of parameters. Encoding or decoding operations are performed on the data to be accessed according to the corresponding one of the resource block sets and the corresponding code division multiplexing code sequence. The encoded or decoded data is accessed. A transmitter module and a receiver module using the foregoing method are also provided.
Abstract:
A multi-blocks radio access method is provided and includes the following steps. A plurality of resource blocks are grouped into a plurality of groups. One resource block is respectively selected from the groups to form a plurality of resource block sets. Data to be accessed are transmitted in corresponding one of the resource block sets. A code division multiplexing code sequence is determined for the corresponding one of the resource block sets according to at least one of a plurality of parameters. Encoding or decoding operations are performed on the data to be accessed according to the corresponding one of the resource block sets and the corresponding code division multiplexing code sequence. The encoded or decoded data is accessed. A transmitter module and a receiver module using the foregoing method are also provided.
Abstract:
Methods for data transmission management used in a transmitter are provided. The method comprises the steps of: encoding M uncoded packets into N coded packets with Q-packet error correction capability using concatenated encoding, where M≦N, and Q≧1; sequentially transmitting a set or all of the N coded packets to the at least one receiver; receiving at least one feedback information from the at least one receiver, wherein the at least one feedback information comprises at least one ACK or NACK information for indicating decoding statuses of the transmitted coded packets, each of the transmitted coded packets having one of the decoding statuses corresponding thereto; and determining whether to perform a retransmission procedure to retransmit a dedicated packet to the at least one receiver according to collected ACK/NACK included in the feedback information.
Abstract:
A method for forming a phase change memory device is disclosed. A substrate with a bottom electrode thereon is provided. A heating electrode and a dielectric layer are formed on the bottom electrode, wherein the heating electrode is surrounded by the dielectric layer. The heating electrode is etched to form recess in the dielectric layer. A phase change material is deposited on the dielectric layer, filling into the recess. The phase change material is polished to remove a portion of the phase change material exceeding the surface of the dielectric layer and a phase change layer is formed confined in the recess of the dielectric layer. A top electrode is formed on the phase change layer and the dielectric layer.
Abstract:
A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.
Abstract:
A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.
Abstract:
An apparatus is provided for allocating uplink resources in a system in which downlink component carrier bands are aggregated and uplink component carrier bands are aggregated. The apparatus includes a processor configured to perform or cause the apparatus to perform a number of functions. The functions include receiving an assignment or an indication of an assignment of one or more resource indices to the apparatus. Additional resource indices for the apparatus may be derived as a function of an assigned resource index. The assigned resource indices and/or additional resource indices may be pre-assigned to respective pairs of downlink and uplink component carrier bands, or may be mapped to uplink component carriers. The apparatus may then be enabled to transmit or may prepare for transmission uplink control signals in an uplink component carrier band in accordance with an allocation of uplink resources specified by one of the resource indices.