Abstract:
A light emitting diode contains a package structure and a light emitting diode die embedded in the package structure. The package structure has an elliptic bottom surface having a semi-major axes and a semi-minor axis and a semi-ellipsoidal surface connecting and surrounding the edge of the elliptic bottom surface, wherein the maximum height of the ellipsoidal surface from the elliptic bottom surface is between the semi-major axes and the semi-minor axis.
Abstract:
A fiber laser system including a laser pumping source, first and second wavelength reflectors, first and second gain fibers, and first and second long wavelength reflectors is provided. The laser pumping source is adapted to emit a pumping beam. The first wavelength reflector is coupled to the laser pumping source. The first gain fiber is coupled between the first and the second wavelength reflectors. The first long wavelength reflector is coupled between the first gain fiber and the second wavelength reflector. The second long wavelength reflector is coupled between the first long wavelength reflector and the second wavelength reflector. The second gain fiber is coupled between the first and the second long wavelength reflectors. The diameter of the core of the first gain fiber is greater than the diameter of the core of the second gain fiber.
Abstract:
A control circuit is applied into a projector and an operation method is provided for the projector. The projector includes a photo sensor provided for generating a sensing voltage according to light intensity sensed by the photo sensor. The control circuit includes a first voltage-comparing unit, a reference voltage generating unit and a second voltage-comparing unit. The first voltage-comparing unit is provided for comparing the sensing voltage and a first reference voltage, to generate a first comprising result. The reference-voltage generating unit is provided for generating a second reference voltage and determining whether adjusting the second reference voltage according to the first comparing result. The second reference voltage is relatively larger than the first reference voltage. The second voltage-comparing unit is provided for comparing the sensing voltage and the second reference voltage, to generate a second comparing result.
Abstract:
A light emitting diode contains a package structure and a light emitting diode die embedded in the package structure. The package structure has an elliptic bottom surface having a semi-major axes and a semi-minor axis and a semi-ellipsoidal surface connecting and surrounding the edge of the elliptic bottom surface, wherein the maximum height of the ellipsoidal surface from the elliptic bottom surface is between the semi-major axes and the semi-minor axis.
Abstract:
A light emitting diode contains a light emitting diode chip and a light directing structure disposed thereon. The light directing structure has a pair of connected hemi-ellipsoids and an interface interposed therebetween. Each hemi-ellipsoid comprises a bottom surface in a shape of an incomplete ellipse and an ellipsoidal surface connected to the bottom surface and the interface, wherein the largest vertical distance from the ellipsoidal surface to the bottom surface is longer than a height of the interface. The bottom surface has a major axis and a minor axis intersected to define a center, wherein the interface is connected to the minor axis.
Abstract:
A display device and a method of manufacturing the same are provided. The display device includes an illuminate unit and a color filter. The illuminate unit has a light-emitting chip and a plurality of quantum dot phosphors for generating a color light which has an optical spectrum including the first blue peak wavelength, a first green peak wavelength, and a first red peak wavelength. The color filter is disposed in the light path of the color light, wherein the color filter has a transmittance spectrum having a second blue peak wavelength, a second green peak wavelength, and a second red peak wavelength. The first blue peak wavelength, the first green peak wavelength, and the first red peak wavelength respectively match the second blue peak wavelength, the second green peak wavelength, and the second red peak wavelength in order to enhance the color performance of the display device.
Abstract:
A backlight module is provided. The backlight module includes a light guide plate, an optical component, and a light source for generating light. The optical component is provided for adjusting or veering the light emitted from the light source along a direction perpendicular to the light guide plate. One end of the optical component is affixed to the light source for receiving the incident light. The other end of the optical component faces, and is separated from, the light guide plate, so as to direct the light to the light guide plate.
Abstract:
A white-light emitting device comprises a substrate, a short wavelength light source, a protective layer, a first structure, and a second structure. The short wavelength light source is disposed on the substrate for generating a first light, and the protective layer covering the short wavelength light source is pervious to the first light. The first structure is disposed on the protective layer for generating a second light, in which the first structure includes a first quantum well and a transmission layer. The second structure is disposed on the first structure for generating a third light. Finally, the first light, the second light, and the third light are mixed to generate a white light.
Abstract:
A light spreading device and a backlight module utilizing the same. The backlight module includes a light guide, a plurality of point lights, and a plurality of light spreading devices. The light guide includes an entrance surface. The point lights are disposed near the entrance surface. Each light spreading device, corresponding to one of the point lights, is disposed between the light guide and the corresponding point light.
Abstract:
Methods are disclosed of forming and removing a reacted layer on a surface of a recess to provide mechanisms for improving thickness uniformity of a semiconductor material formed in the recess. The improved thickness uniformity in turn improves the uniformity of device performance.