公开(公告)号：EP2897159A1

公开(公告)日：2015-07-22

申请号：EP12884698.7

申请日：2012-12-31

Applicant: Jiangsu R&D Center For Internet Of Things ,  The Institute of Microelectronics of Chinese Academy of Sciences ,  Jiangsu Cas-IGBT Technology Co., Ltd

Inventor： ZHU, Yangjun ,  WANG, Bo ,  LU, Shuojin ,  HU, Aibin

IPC: H01L21/328 ,  H01L21/331 ,  H01L29/73

CPC classification number: H01L29/66348 ,  H01L29/0634 ,  H01L29/165 ,  H01L29/7397

Abstract: A method for manufacturing a high-voltage super junction insulated gate bipolar transistor (IGBT), including the following steps: respectively etching trenches on N type and P type substrates; respectively filling the trenches with epitaxy P type and N type monocrystalline silicon, and flattening and thinning the facades after filling; polishing the facades of silicon wafers, and treating the silicon wafers through acid; accurately aligning the two treated silicon wafers and bonding; thinning the back surface of the bonded silicon wafer to remove an N layer to expose an N and P alternately distributed layout; repeating step 3 and step 4 to bond for the second time; fabricating the facade of the device, and fabricating a back surface collector layer by depositing a P type strain SiGe layer; fabricating a metal layer on the back surface by using metal Al/Ti/Ni/Ag. The super junction IGBT manufactured by a twice bonding method has a larger depth-width ratio, thus being suitable for high-voltage devices.

Abstract translation: 一种用于制造高压超结绝缘栅双极晶体管（IGBT）的方法，包括以下步骤：分别蚀刻N型和P型衬底上的沟槽; 分别用外延P型和N型单晶硅填充沟槽，并在填充后使外墙变平和变薄; 抛光硅晶片的立面，并通过酸处理硅晶片; 准确对准两个经处理的硅晶片并进行接合; 使接合的硅晶片的背面变薄以除去N层以露出N和P交替分布的布局; 重复步骤3和步骤4第二次结合; 制造器件的立面，并通过沉积P型应变SiGe层制造后表面集电极层; 通过使用金属Al / Ti / Ni / Ag在后表面上制造金属层。 通过两次接合方法制造的超结IGBT具有较大的深度比，因此适用于高压器件。