公开(公告)号：WO2014093241A1

公开(公告)日：2014-06-19

申请号：PCT/US2013/073917

申请日：2013-12-09

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： GOLDA, Dariusz ,  HIGGINSON, John A. ,  BIBL, Andreas

IPC: H01L21/677 ,  B65G49/07 ,  B65G47/90

CPC classification number: H01L24/75 ,  H01L24/97 ,  H01L25/167 ,  H01L33/00 ,  H01L2224/75725 ,  H01L2224/75843 ,  H01L2224/7598 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/351 ,  Y10T279/23 ,  H01L2924/00

Abstract: Systems and methods for transferring a micro device from a carrier substrate are disclosed. In an embodiment, a micro pick up array mount includes a pivot platform to allow a micro pick up array to automatically align with a carrier substrate. Deflection of the pivot platform may be detected to control further movement of the micro pick up array.

Abstract translation: 公开了用于从载体衬底传送微器件的系统和方法。 在一个实施例中，微拾取阵列安装件包括枢轴平台，以允许微拾取阵列自动对准载体衬底。 可以检测枢轴平台的偏转以控制微拾取阵列的进一步移动。

公开(公告)号：WO2014046981A1

公开(公告)日：2014-03-27

申请号：PCT/US2013/059807

申请日：2013-09-13

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： HU, Hsin-Hua ,  BIBL, Andreas ,  HIGGINSON, John A.

IPC: B81B7/00 ,  B81B7/04 ,  B81C1/00 ,  H01L21/67

CPC classification number: H01L24/06 ,  H01L21/6835 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/75 ,  H01L24/83 ,  H01L24/95 ,  H01L25/0753 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68368 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/7598 ,  H01L2224/83409 ,  H01L2224/83411 ,  H01L2224/83444 ,  H01L2224/83815 ,  H01L2924/10156 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A method and structure for stabilizing an array of micro devices is disclosed. The array of micro devices is formed on an array of stabilization posts formed from a thermoset material. Each micro device includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.

Abstract translation: 公开了一种稳定微器件阵列的方法和结构。 微器件阵列形成在由热固性材料形成的稳定柱阵列上。 每个微型装置包括比直接在底面下面的相应稳定柱更宽的底表面。

公开(公告)号：WO2014008111A1

公开(公告)日：2014-01-09

申请号：PCT/US2013/048365

申请日：2013-06-27

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： GOLDA, Dariusz ,  BIBL, Andreas

IPC: H01L29/00 ,  H01L21/02

CPC classification number: H01L21/76898 ,  B81B2207/053 ,  B81C1/0015 ,  B81C99/002 ,  H01L24/75 ,  H01L2224/7598

Abstract: A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.

Abstract translation: 描述了一种兼容的单极微器件传输头阵列和从SOI衬底形成兼容单极微器件传输阵列的方法。 在一个实施例中，微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括在硅互连上方突出的台面结构，并且每个硅电极可偏转到基底基板和硅电极之间的空腔中。 介电层覆盖每个台面结构的顶面。

公开(公告)号：WO2013176964A1

公开(公告)日：2013-11-28

申请号：PCT/US2013/041444

申请日：2013-05-16

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： GOLDA, Dariusz ,  BIBL, Andreas

IPC: H01L21/677 ,  B65G49/07 ,  B81C1/00

CPC classification number: H01L21/6833 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L2221/68368 ,  H01L2924/00 ,  H01L2924/0002 ,  H05K1/0284 ,  H05K1/03 ,  H05K1/09 ,  H05K1/115 ,  H05K2201/09036

Abstract: A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.

Abstract translation: 描述了从SOI衬底形成微器件传输阵列的微器件转移头阵列和方法。 在一个实施例中，微器件传送头阵列包括基底衬底和基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括突出在硅互连上方的台面结构。 介电层覆盖每个台面结构的顶面。

公开(公告)号：WO2013119671A1

公开(公告)日：2013-08-15

申请号：PCT/US2013/024939

申请日：2013-02-06

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： BIBL, Andreas ,  HIGGINSON, John A. ,  HU, Hsin-Hua ,  LAW, Hung-Fai Stephen

IPC: H01L21/677 ,  H01L21/60 ,  H01L21/762

CPC classification number: H01L24/83 ,  H01L21/67144 ,  H01L24/75 ,  H01L24/95 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29183 ,  H01L2224/75261 ,  H01L2224/75281 ,  H01L2224/75282 ,  H01L2224/75283 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/83 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83805 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/83948 ,  H01L2224/95001 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/12041 ,  H01L2924/1461 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01031 ,  H01L2924/01051 ,  H01L2924/01029 ,  H01L2924/01048 ,  H01L2924/01082 ,  H01L2924/0103

Abstract: Electrostatic transfer head array assemblies and methods of transferring and bonding an array of micro devices to a receiving substrate are described. In an embodiment, a method includes picking up an array of micro devices from a carrier substrate with an electrostatic transfer head assembly supporting an array of electrostatic transfer heads, contacting a receiving substrate with the array of micro devices, transferring energy from the electrostatic transfer head assembly to bond the array of micro devices to the receiving substrate, and releasing the array of micro devices onto the receiving substrate.

Abstract translation: 描述了静电转印头阵列组件以及将微器件阵列转移和结合到接收衬底的方法。 在一个实施例中，一种方法包括从载体基板拾取微器件阵列，其中静电转印头组件支持静电转印头阵列，使接收基片与微器件阵列接触，将静电转印头 组件将微器件阵列接合到接收衬底，并将微器件阵列释放到接收衬底上。

公开(公告)号：WO2013074376A1

公开(公告)日：2013-05-23

申请号：PCT/US2012/064234

申请日：2012-11-08

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： BIBL, Andreas ,  HIGGINSON, John A. ,  LAW, Hung-Fai Stephen ,  HU, Hsin-Hua

IPC: H01L21/677 ,  H01L33/00 ,  H05K13/04

CPC classification number: H01L33/06 ,  F21V7/00 ,  H01L25/0753 ,  H01L27/15 ,  H01L29/0684 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/20 ,  H01L33/28 ,  H01L33/30 ,  H01L2224/95

Abstract: A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.

Abstract translation: 描述了微型发光二极管（LED）和形成用于传送到接收基板的微型LED阵列的方法。 微型LED结构可以包括微型p-n二极管和金属化层，金属化层位于微型p-n二极管和结合层之间。 保形介质阻挡层可以跨越微型p-n二极管的侧壁。 微型LED结构和微型LED阵列可以被拾取并转移到接收衬底。

公开(公告)号：WO2013074357A1

公开(公告)日：2013-05-23

申请号：PCT/US2012/063993

申请日：2012-11-07

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： BIBL, Andreas ,  HIGGINSON, John, A. ,  LAW, Hung-Fai, Stephen ,  HU, Hsin-Hua

IPC: H01L21/58 ,  H01L21/677 ,  H05K13/04

CPC classification number: H01L24/83 ,  B32B37/025 ,  B32B37/06 ,  B32B2457/20 ,  H01L21/67144 ,  H01L21/6833 ,  H01L24/75 ,  H01L24/95 ,  H01L24/97 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/83005 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/1421 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/15153 ,  Y10T156/1153 ,  Y10T156/1707 ,  Y10T156/1744 ,  Y10T156/1749 ,  Y10T156/1776 ,  H01L2224/83 ,  H01L2924/00

Abstract: A micro device transfer head and head array are disclosed. In an embodiment, the micro device transfer head includes a base substrate, a mesa structure with sidewalls, an electrode formed over the mesa structure, and a dielectric layer covering the electrode. A voltage can be applied to the micro device transfer head and head array to pick up a micro device from a carrier substrate and release the micro device onto a receiving substrate.

Abstract translation: 公开了一种微器件转印头和头阵列。 在一个实施例中，微器件转移头包括基底，具有侧壁的台面结构，形成在台面结构上的电极以及覆盖电极的电介质层。 可以将电压施加到微器件转移头和头阵列以从载体衬底拾取微器件并将微器件释放到接收衬底上。

公开(公告)号：WO2015171267A3

公开(公告)日：2015-11-12

申请号：PCT/US2015/025611

申请日：2015-04-13

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： PARKS, Paul Argus ,  LIGHT, Nile Alexander ,  BATHURST, Stephen P. ,  HIGGINSON, John A. ,  BIBL, Andreas

IPC: B25J7/00 ,  B25J18/00

Abstract: Systems and methods for transferring a micro device or an array of micro devices to or from a substrate are disclosed. In an embodiment, a remote center robot allows on-the-fly alignment between a micro pick up array and a target substrate. The remote center robot may include a plurality of symmetric linkages that move independently and share a remote rotational center. In an embodiment, the remote rotational center may be positioned at a surface of the micro pick up array to prevent damage to the array of micro devices during transfer.

公开(公告)号：WO2015138102A1

公开(公告)日：2015-09-17

申请号：PCT/US2015/016696

申请日：2015-02-19

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： HU, Hsin-Hua ,  BIBL, Andreas

IPC: H01L25/075 ,  H01L33/08 ,  H01L33/16 ,  H01L33/24 ,  H01L33/00

CPC classification number: H01L27/153 ,  H01L24/75 ,  H01L24/83 ,  H01L24/95 ,  H01L25/0753 ,  H01L29/0669 ,  H01L29/0676 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/08 ,  H01L33/16 ,  H01L33/18 ,  H01L33/24

Abstract: A nanowire device (250) and a method of forming a nanowire device that is poised for pick up and transfer to a receiving substrate are described. In an embodiment, the nanowire device (250) includes a base layer (208) and a plurality of nanowires on and protruding away from a first surface of the base layer. An encapsulation material (234) laterally surrounds the plurality of nanowires in the nanowire device, such that the nanowires are embedded within the encapsulation material.

Abstract translation: 描述了纳米线器件（250）和形成用于拾取和转移到接收衬底的纳米线器件的方法。 在一个实施例中，纳米线器件（250）包括基底层（208）和在基底层的第一表面上并远离基底层突出的多个纳米线。 封装材料（234）横向地围绕纳米线装置中的多个纳米线，使得纳米线嵌入封装材料内。

公开(公告)号：WO2015099944A1

公开(公告)日：2015-07-02

申请号：PCT/US2014/067501

申请日：2014-11-25

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： MCGRODDY, Kelly ,  HU, Hsin-Hua ,  BIBL, Andreas ,  CHAN, Clayton Ka Tsun ,  HAEGER, Daniel Arthur

IPC: H01L33/14 ,  H01L25/075 ,  G02F1/1335 ,  G09G3/32 ,  H01L33/16 ,  H01L33/20 ,  H01L27/15 ,  H01L27/12 ,  H01L23/00

CPC classification number: H01L33/145 ,  G09G3/32 ,  H01L24/75 ,  H01L24/95 ,  H01L25/0753 ,  H01L27/016 ,  H01L27/156 ,  H01L33/0016 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/14 ,  H01L33/16 ,  H01L33/20 ,  H01L33/30 ,  H01L33/42 ,  H01L2224/75305 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/82203 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

Abstract translation: 公开了用于形成LED器件阵列的方法和结构。 根据本发明的实施例的LED器件可以包括内部限制的电流注入区域，以减少由于边缘效应引起的非辐射复合。 限制电流的几种方式可以包括电流分布层的蚀刻去除，电流分布层和有源层的蚀刻去除，随后的台面再生长，通过离子注入或扩散的分离，量子阱混合和氧化物隔离。