公开(公告)号：US20100068881A1

公开(公告)日：2010-03-18

申请号：US12458676

申请日：2009-07-20

Applicant: Joo-ho Kang ,  Matsuda Tsukasa ,  Yong-chul Lee ,  Hyung-sik Hong ,  Sang-yeob Cha ,  Tae-hong Ha

Inventor： Joo-ho Kang ,  Matsuda Tsukasa ,  Yong-chul Lee ,  Hyung-sik Hong ,  Sang-yeob Cha ,  Tae-hong Ha

IPC: H01L21/768

CPC classification number: H01L21/76843 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76877

Abstract: A method of forming metallization in a semiconductor device, including forming an interlayer insulation layer on a semiconductor layer, forming a hole in the interlayer insulation layer by removing a portion of the interlayer insulation layer, forming a metal seed layer in the hole and on an upper surface of the interlayer insulation layer, such that the metal seed layer includes a first portion on the upper surface of the interlayer insulation layer, a second portion on an upper side surface of the hole, and a third portion on central and lower side surfaces of the hole, selectively plasma-treating a portion of the metal seed layer, forming a metal layer on the metal seed layer to fill the hole, and forming metallization by polishing the metal layer.

Abstract translation: 一种在半导体器件中形成金属化的方法，包括在半导体层上形成层间绝缘层，通过去除所述层间绝缘层的一部分，在所述层间绝缘层中形成孔，在所述孔中形成金属种子层 所述层间绝缘层的上表面，使得所述金属种子层包括所述层间绝缘层的上表面上的第一部分，所述孔的上侧表面上的第二部分，以及在所述中间和下侧表面上的第三部分 ，选择性地等离子体处理金属种子层的一部分，在金属种子层上形成金属层以填充孔，并通过抛光金属层形成金属化。