公开(公告)号：WO2007062250A3

公开(公告)日：2007-08-30

申请号：PCT/US2006045540

申请日：2006-11-28

Applicant: CRYSTAL IS INC ,  BONDOKOV ROBERT T ,  MORGAN KENNETH ,  SLACK GLEN A ,  SCHOWALTER LEO J

Inventor： BONDOKOV ROBERT T ,  MORGAN KENNETH ,  SLACK GLEN A ,  SCHOWALTER LEO J

IPC: C30B23/00 ,  C30B29/40

CPC classification number: C30B23/02 ,  B28D5/00 ,  C23C16/34 ,  C30B23/00 ,  C30B25/02 ,  C30B25/08 ,  C30B25/10 ,  C30B25/18 ,  C30B29/403 ,  C30B33/02 ,  H01L21/0201 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/30625 ,  Y10T428/21

Abstract: Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities - e.g., a dislocation density below 10 4 cm -3 and an inclusion density below 10 4 cm -3 and/or a MV density below 10 4 cm -3 .

Abstract translation: 降低AlN中的微孔（MV）密度改善了与晶体生长期间的开裂有关的许多问题，抛光期间的蚀刻坑产生，AlN晶片中的光学透明度的降低以及可能的AlN的外延生长期间的生长凹坑形成和/ 或AlGaN。 这有助于实际的晶体生产策略和形成具有低缺陷密度的大的大块AlN晶体 - 例如，位错密度低于10 -4 cm -3，并且包含密度低于 而且，或者低于10 -4 cm -3的MV密度。

公开(公告)号：WO2007062250A2

公开(公告)日：2007-05-31

申请号：PCT/US2006/045540

申请日：2006-11-28

Applicant: CRYSTAL IS, INC. ,  BONDOKOV, Robert, T. ,  MORGAN, Kenneth ,  SLACK, Glen, A. ,  SCHOWALTER, Leo, J.

Inventor： BONDOKOV, Robert, T. ,  MORGAN, Kenneth ,  SLACK, Glen, A. ,  SCHOWALTER, Leo, J.

IPC: C30B23/00 ,  C30B29/40

CPC classification number: C30B33/02 ,  B28D5/00 ,  C23C16/34 ,  C30B23/00 ,  C30B23/02 ,  C30B25/02 ,  C30B25/08 ,  C30B25/10 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0201 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/30625 ,  Y10T428/21

Abstract: Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities - e.g., a dislocation density below 10 4 cm -3 and an inclusion density below 10 4 cm -3 and/or a MV density below 10 4 cm -3 .

Abstract translation: 减少AlN中的微空隙（MV）密度减少了与晶体生长期间的开裂，抛光期间的蚀刻坑生成，AlN晶片中的光学透明度降低以及可能的生长坑 在AlN和/或AlGaN的外延生长期间形成。 这有利于实际的晶体生产策略和形成具有低缺陷密度的大的块状AlN晶体 - 例如位错密度低于10 4 cm -3和夹杂物密度低于 10 4 cm -3和/或中密度密度低于10 4 cm -3。

公开(公告)号：WO2006124459A2

公开(公告)日：2006-11-23

申请号：PCT/US2006/018091

申请日：2006-05-10

Applicant: CORNING INCORPORATED ,  COX, Judy K ,  JOSEPH, Michael A, II ,  MORGAN, Kenneth S

Inventor： COX, Judy K ,  JOSEPH, Michael A, II ,  MORGAN, Kenneth S

IPC: B65H35/10 ,  B26F3/00

CPC classification number: B26F3/002 ,  B65G2249/04 ,  C03B33/0215 ,  Y10T83/0341 ,  Y10T225/12 ,  Y10T225/16 ,  Y10T225/18 ,  Y10T225/321 ,  Y10T225/325 ,  Y10T225/371 ,  Y10T225/379

Abstract: A pane is separated from a moving ribbon of brittle material by restraining the ribbon upstream of a score line prior to separating the pane. The ribbon is restrained by selectively contacting a first side and a second side of the ribbon in one of an opposite, overlapping or offset relation. The ribbon can be restrained prior to, substantially simultaneous with or subsequent to forming the score line. The restrained status of the ribbon is maintained during and immediately after separation of the pane from the ribbon, thereby reducing the introduction of a disturbance or bending moment into the upstream ribbon.

Abstract translation: 在分离玻璃板之前，通过在刻痕线的上游限制带，将玻璃板与可移动的脆性材料带分开。 通过以相反，重叠或偏移关系中的一个选择性地接触带的第一侧和第二侧来限制带。 在形成刻痕线之前，基本同时或之后可以约束带状物。 在玻璃板与色带分离期间和之后立即保持色带的约束状态，从而减少对上游色带的干扰或弯曲力矩的引入。

公开(公告)号：WO2011087938A3

公开(公告)日：2011-12-01

申请号：PCT/US2011020185

申请日：2011-01-05

Applicant: BORGWARNER INC ,  MORGAN KENNETH W JR ,  QUE DENNIS R

Inventor： MORGAN KENNETH W JR ,  QUE DENNIS R

IPC: F16K31/06 ,  F16K11/07 ,  F16K27/00

CPC classification number: F16K31/0613 ,  F15B13/0835 ,  F16H61/0009

Abstract: A hydraulic housing for a solenoid valve is provided having a polymeric housing body with at least three control volumes intersected by a central bore with at least two of said control volumes being intersected by a radial passage. At least three axially spaced annular metallic bearing members are provided with at least two annular metallic bearing members providing control volume boundaries. The bearing members are permanently affixed within the polymeric body and have concentric inner diameters for receipt of a spool valve. The inner diameters of the bearing members are machined after the bearing members are affixed within the polymeric body.

Abstract translation: 提供了一种用于电磁阀的液压壳体，其具有聚合物壳体，其具有与中心孔相交的至少三个控制体积，所述控制体积中的至少两个与径向通道相交。 至少三个轴向间隔开的环形金属轴承构件设置有提供控制体积边界的至少两个环形金属轴承构件。 轴承构件永久地固定在聚合物主体内并且具有用于接收滑阀的同心内径。 轴承构件的内径在将轴承构件固定在聚合物本体中之后进行加工。

公开(公告)号：WO2009056870A1

公开(公告)日：2009-05-07

申请号：PCT/GB2008/050896

申请日：2008-10-03

Applicant: NATIONAL OILWELL VARCO, L.P. ,  LUCAS, Brian Ronald ,  GADDIS, Emerson Clifford ,  PIERCE, Dale Alton ,  MORGAN, Kenneth Arnold

Inventor： GADDIS, Emerson Clifford ,  PIERCE, Dale Alton ,  MORGAN, Kenneth Arnold

IPC: E21B21/06

CPC classification number: E21B21/065 ,  E21B21/062

Abstract: A method and appa ratus for recovering spent drilling mud, the apparatus comprising a mixer (20) to mix flocculants with spent drilling mud to produce a mixture, heating said mixture with a heating apparatus (314) to produce a heated mixture, and separating d rilling mud w ith a separating apparatus (330) from the heated mixture to produce separated drilling mud.

Abstract translation: 一种用于回收废钻井泥浆的方法和设备，所述设备包括混合器（20）以将絮凝剂与废钻井泥浆混合以产生混合物，用加热设备（314）加热所述混合物以产生加热的混合物，并分离d 通过分离装置（330）从加热的混合物中冲洗泥浆以产生分离的钻井泥浆。

公开(公告)号：WO0120037A3

公开(公告)日：2002-05-30

申请号：PCT/US0025124

申请日：2000-09-14

Applicant: COMPLEXE HOSPITALIER DE LA SAG ,  UNIV MCGILL ,  HUDSON THOMAS J ,  GAUDET DANIEL ,  VOHL MARIE CLAUDE ,  BREWER CARL ,  MORGAN KENNETH

Inventor： HUDSON THOMAS J ,  GAUDET DANIEL ,  VOHL MARIE-CLAUDE ,  BREWER CARL ,  MORGAN KENNETH

IPC: A61K38/00 ,  C07K14/705 ,  C12Q1/68 ,  C07K14/47

CPC classification number: C07K14/705 ,  A61K38/00 ,  C12Q1/6883 ,  C12Q2600/156

Abstract: The complete genomic structure of the peroxisome proliferator-activated receptor alpha gene is described. Also described are the identification of novel single nucleotide polymorphisms and association with higher plasma LDL-cholesterol and total and LDL-apolipoprotein B concentrations.

Abstract translation: 描述了过氧化物酶体增殖物激活受体α基因的完整基因组结构。 还描述了新型单核苷酸多态性的鉴定和与较高血浆LDL-胆固醇和总和LDL-载脂蛋白B浓度的关系。

公开(公告)号：WO2008042020A3

公开(公告)日：2008-09-12

申请号：PCT/US2007011075

申请日：2007-05-08

Applicant: CRYSTAL IS INC ,  SCHOWALTER LEO J ,  SLACK GLEN A ,  LIU SHIWEN ,  BONDOKOV ROBERT T ,  MORGAN KENNETH E ,  SMART JOSEPH A ,  BETTLES TIMOTHY J ,  ROJO J CARLOS

Inventor： SCHOWALTER LEO J ,  SLACK GLEN A ,  LIU SHIWEN ,  BONDOKOV ROBERT T ,  MORGAN KENNETH E ,  SMART JOSEPH A ,  BETTLES TIMOTHY J ,  ROJO J CARLOS

IPC: H01L21/20 ,  H01L21/203

CPC classification number: H01L33/0075 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L2924/0002 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04 ,  H01L2924/00

Abstract: Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10 6 cm -2 . Bulk single crystals of AlN have a diameter greater than about 25 mm and dislocation densities of about 10,000 cm -2 or less, and high-quality AlN substrates have surfaces of any desired crystallographic orientation fabricated from these bulk crystals.

Abstract translation: 基于此的半导体结构和器件包括氮化铝单晶衬底和在其上外延生长的至少一个层。 外延层可以包括AlN，GaN，InN或其任何二元或三元合金组合中的至少一种，并且具有在半导体异质结构内的平均位错密度小于大约10 6 cm / cm ^{-2 。 AlN的块状单晶具有大于约25mm的直径和约10,000cm -2或更小的位错密度，并且高质量的AlN衬底具有由这些块状晶体制造的任何期望的晶体取向的表面 。}

公开(公告)号：US2555501A

公开(公告)日：1951-06-05

申请号：US79132447

申请日：1947-12-12

Applicant: MORGAN KENNETH F

Inventor： MORGAN KENNETH F

IPC: B63H9/10 ,  B66D1/74

CPC classification number: B63H9/10 ,  B66D1/7415

公开(公告)号：US2623732A

公开(公告)日：1952-12-30

申请号：US10003149

申请日：1949-06-18

Applicant: MORGAN KENNETH F

Inventor： MORGAN KENNETH F

IPC: B66D3/04

CPC classification number: B66D3/04 ,  B66D2700/028