公开(公告)号：WO2009132181A3

公开(公告)日：2010-02-18

申请号：PCT/US2009041528

申请日：2009-04-23

Applicant: APPLIED MATERIALS INC ,  RASHEED MUHAMMAD M ,  IWASHITA TERUKI ,  OTAKE HIROSHI ,  KOGA YUKI ,  MAEHARA KAZUTOSHI ,  CHEN XINGLONG ,  GONDHALEKAR SUDHIR ,  LUBOMIRSKY DMITRY

Inventor： RASHEED MUHAMMAD M ,  IWASHITA TERUKI ,  OTAKE HIROSHI ,  KOGA YUKI ,  MAEHARA KAZUTOSHI ,  CHEN XINGLONG ,  GONDHALEKAR SUDHIR ,  LUBOMIRSKY DMITRY

IPC: H01L21/683 ,  H01L21/687

CPC classification number: C23C16/4585 ,  C23C16/4581 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/68735

Abstract: Embodiments of process kits for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, a process kit for a semiconductor process chamber may include an annular body being substantially horizontal and having an inner and an outer edge, and an upper and a lower surface; an inner lip disposed proximate the inner edge and extending vertically from the upper surface; and an outer lip disposed proximate the outer edge and on the lower surface, and having a shape conforming to a surface of the substrate support pedestal. In some embodiments, a process kit for a semiconductor process chamber my include an annular body having an inner and an outer edge, and having an upper and lower surface, the upper surface disposed at a downward angle of between about 5-65 degrees in a radially outward direction from the inner edge toward the outer edge.

Abstract translation: 本文提供了半导体衬底处理腔的衬底支撑件的工艺组件的实施例。 在一些实施例中，用于半导体处理室的处理套件可以包括基本上水平的并具有内部和外部边缘以及上部和下部表面的环形体; 靠近所述内边缘并从所述上表面垂直延伸的内唇缘; 以及设置在所述外边缘和所述下表面附近并且具有与所述基板支撑基座的表面相符的形状的外唇缘。 在一些实施例中，用于半导体处理室的处理套件包括具有内边缘和外边缘的环形体，并且具有上表面和下表面，所述上表面以约5-65度的向下角度设置在 从内缘朝向外缘的径向向外方向。

公开(公告)号：WO2009131889A9

公开(公告)日：2009-12-30

申请号：PCT/US2009040809

申请日：2009-04-16

Applicant: APPLIED MATERIALS INC ,  LUBOMIRSKY DMITRY ,  RASHEED MUHAMMAD M ,  YIEH ELLIE Y

Inventor： LUBOMIRSKY DMITRY ,  RASHEED MUHAMMAD M ,  YIEH ELLIE Y

IPC: H01L21/324 ,  H01L21/205

CPC classification number: H01L21/67115 ,  H01L21/3105 ,  H01S3/03 ,  H01S3/034 ,  H01S3/0385 ,  H01S3/225 ,  H05H1/2406 ,  H05H2001/2431 ,  H05H2001/245

Abstract: An apparatus for An apparatus for generating excimer radiation is provided. The apparatus includes a housing having a housing wall. An electrode is configured within the housing. A tubular body is around the electrode. The tubular body includes an outer wall and an inner wall. At least one inert gas is between the outer wall and the inner wall, wherein the housing wall and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.

Abstract translation: 提供了一种用于产生准分子辐射的装置。 该装置包括具有壳体壁的壳体。 电极配置在外壳内。 管状体在电极周围。 管体包括外壁和内壁。 至少一个惰性气体位于外壁和内壁之间，其中壳体壁和电极构造成激发惰性气体以照射准分子光以进行固化。