公开(公告)号：GB190019362A

公开(公告)日：1901-08-17

申请号：GB190019362D

申请日：1900-10-30

Applicant: STEWART DUNCAN

Inventor： STEWART DUNCAN

Abstract: 19,362. Stewart, D. Oct. 30. Refining sugar.-An apparatus for separating liquids from solids may, according to the Provisional Specification, be used for the separation of sugar crystals from their syrups. The material to be treated is fed upon an endless band B, which consists of wire gauze attached to brackets C', Fig. 8, carrying chains C, and supporting, if necessary, a sheet of fabric which is held in place by clips C'. The faces C' of the clips are connected by flexible bent leather strips, so as to form edges which retain the material on the band. The band passes over vacuum boxes L' and under washing-pipes M and rakes M , and then over heating-boxes or coils P, which dry the solid matter to enable it to be removed by the scraper Q and brush R. The band is finally cleaned by washing-appliances U', and then dried. According to the Provisional Specification, strips of material, or " deckles," may be used instead of the retaining- edges of the band described above.

公开(公告)号：CA30946A

公开(公告)日：1889-03-19

申请号：CA30946D

Applicant: STEWART DUNCAN

Inventor： STEWART DUNCAN

公开(公告)号：WO2010087836A1

公开(公告)日：2010-08-05

申请号：PCT/US2009/032496

申请日：2009-01-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  PICKETT, Matthew, D. ,  CHO, Hans, S. ,  BORGHETTI, Julien ,  STEWART, Duncan

Inventor： PICKETT, Matthew, D. ,  CHO, Hans, S. ,  BORGHETTI, Julien ,  STEWART, Duncan

IPC: H01L29/40 ,  H03K19/0948 ,  H03K17/687 ,  G06F13/00

CPC classification number: H01L45/145 ,  H01L27/2472 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/147 ,  H01L45/165

Abstract: An electrically actuated device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle, thereby forming a junction therebetween. A material is established on the first electrode and at the junction. At least a portion of the material is a matrix region. A current conduction channel extends substantially vertically between the first and second electrodes, and is defined in at least a portion of the material positioned at the junction. The current conduction channel has a controlled profile of dopants therein.

Abstract translation: 电驱动装置包括第一电极和第二电极，其以非零角度与第一电极交叉，从而在它们之间形成接合部。 在第一电极和接合处建立材料。 材料的至少一部分是矩阵区域。 电流传导通道在第一和第二电极之间基本垂直地延伸，并且限定在位于结处的材料的至少一部分中。 电流传导通道在其中具有受控的掺杂剂分布。

公开(公告)号：WO2009017769A2

公开(公告)日：2009-02-05

申请号：PCT/US2008/009224

申请日：2008-07-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  TAN, Michael ,  WANG, Shih-Yuan ,  STEWART, Duncan ,  FATTAL, David

Inventor： TAN, Michael ,  WANG, Shih-Yuan ,  STEWART, Duncan ,  FATTAL, David

IPC: H01S3/08 ,  H01S3/109

CPC classification number: H01S5/1075 ,  B82Y20/00 ,  G02B6/12007 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/026 ,  H01S5/0422 ,  H01S5/1032 ,  H01S5/1042 ,  H01S5/2063 ,  H01S5/222 ,  H01S5/3211 ,  H01S5/34306

Abstract: Various embodiments of the present invention are related to microresonator systems that can be used as a laser, a modulator, and a photodetector and to methods for fabricating the microresonator systems. In one embodiment, a microresonator system (100) comprises a substrate (106) having a top surface layer (104), at least one waveguide (114,116) embedded within the substrate (106), and a microdisk (102) having a top layer (118), an intermediate layer (122), a bottom layer (120), current isolation region (128), and a peripheral annular region (124,126). The bottom layer (120) of the microdisk (102) is in electrical communication with the top surface layer (104) of the substrate (106) and is positioned so that at least a portion of the peripheral annular region (124,126) is located above the at least one waveguide (114,116). The current isolation region (128) is configured to occupy at least a portion of a central region of the microdisk and has a relatively lower refractive index and relatively larger bandgap than the peripheral annular region.

Abstract translation: 本发明的各种实施方案涉及可用作激光的微谐振器系统，调制器和光电检测器以及用于制造微谐振器系统的方法。 在一个实施例中，微谐振器系统（100）包括具有顶表面层（104），嵌入衬底（106）内的至少一个波导（114,116）的衬底（106）和具有顶层 （118），中间层（122），底层（120），电流隔离区域（128）和外围环形区域（124,126）。 微盘（102）的底层（120）与衬底（106）的顶表面层（104）电连通并且被定位成使周边环形区域（124,126）的至少一部分位于 所述至少一个波导（114,116）。 电流隔离区128被配置为占据微盘的中心区域的至少一部分，并且具有比周边环形区域相对更低的折射率和相对较大的带隙。

公开(公告)号：WO2008013683A2

公开(公告)日：2008-01-31

申请号：PCT/US2007/015961

申请日：2007-07-11

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. ,  BRATKOVSKI, Alexandre ,  STEWART, Duncan

Inventor： BRATKOVSKI, Alexandre ,  STEWART, Duncan

CPC classification number: G01N21/658

Abstract: An apparatus and related methods for facilitating surface-enhanced Raman spectroscopy (SERS) is described. The apparatus comproses a SERS-active structure (102) near which a plurality of analyte molecules (A) are disposed and an actuation device (112) in actuable communication with the SERS-active structure (102) to deform the SERS-active structure (102) while the analyte molecules (A) are disposed therenear. The deformation of the SERS-active structure (102) varies an intensityof radiation Raman-scattered from the analyte molecules (A).

Abstract translation: 描述了用于促进表面增强拉曼光谱（SERS）的装置和相关方法。 所述装置包括SERS活性结构（102），多个分析物分子（A）设置在该SERS-活性结构（102）附近，以及致动装置（112），其与SERS-活性结构（102）致动连通，以使SERS-活性结构 102），而分析物分子（A）在其周围设置。 SERS活性结构（102）的变形改变了从分析物分子（A）散射的辐射强度。

公开(公告)号：WO2007120695A2

公开(公告)日：2007-10-25

申请号：PCT/US2007/008915

申请日：2007-04-09

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. ,  STEWART, Duncan ,  WANG, Shih-Yuam ,  KUEKES, Philip J, ,  BRATKOVSKI, Alexandre

Inventor： STEWART, Duncan ,  WANG, Shih-Yuam ,  KUEKES, Philip J, ,  BRATKOVSKI, Alexandre

CPC classification number: H04N9/045 ,  G02B26/001 ,  H04N5/2254 ,  H04N9/3108

Abstract: Techniques for rich color image processing are disclosed. The techniques include using as array of tunable optical filter elements (304) to define pixels of an image. The tunable optical filter elements are adjusted during an image dwell time to control the color filtering of the individuals pixels. Exemplary embodiments for image capture (300) and projection (700) are illustrated.

Abstract translation: 公开了用于丰富彩色图像处理的技术。 这些技术包括使用可调谐光学滤光器元件（304）的阵列来定义图像的像素。 在图像驻留时间期间调整可调谐滤光器元件以控制个体像素的颜色滤波。 示出了用于图像捕获（300）和投影（700）的示例性实施例。

公开(公告)号：WO2006115968A3

公开(公告)日：2007-08-16

申请号：PCT/US2006014856

申请日：2006-04-19

Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  WILLIAMS R STANLEY ,  KUEKES PHILLIP J ,  PERNER FREDERICK A ,  SNIDER GREGORY S ,  STEWART DUNCAN

Inventor： WILLIAMS R STANLEY ,  KUEKES PHILLIP J ,  PERNER FREDERICK A ,  SNIDER GREGORY S ,  STEWART DUNCAN

IPC: H01L21/66

CPC classification number: H05K7/1092 ,  H01L23/5228 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In various embodiments of the present invention, tunable resistors (1102) are introduced at the interconnect layer of the integrated circuits (102) in order to provide a means for adjusting internal voltage and/or current levels within the integrated circuit to repair defective components or to configure the integrated circuit following manufacture. For example, when certain internal components, such as transistors, do not have specified electronics characteristics due to manufacturing defects, adjustment of the variable resistances of the tunable resistors (1102) included in the interconnect layer of integrated circuits according to embodiments of the present invention can be used to adjust internal voltage and/or levels in order to ameliorate the defective components. In other cases, the tunable resistors may be used as switches to configure integrated circuit components, including individual transistors and logic gates as well as larger, hierarchically structured functional modules and domains. In some cases, components and modules may be turned off, while, in other cases, components and modules may be turned on.

Abstract translation: 在本发明的各种实施例中，可调谐电阻器（1102）被引入集成电路（102）的互连层，以便提供用于调整集成电路内的内部电压和/或电流水平以修复有缺陷的部件或 配置后续制造的集成电路。 例如，当某些内部组件（例如晶体管）由于制造缺陷而没有指定的电子特性时，根据本发明的实施例调整包括在集成电路的互连层中的可调电阻器（1102）的可变电阻 可以用于调整内部电压和/或电平，以改善有缺陷的部件。 在其他情况下，可调谐电阻器可以用作开关以配置集成电路部件，包括单独的晶体管和逻辑门以及更大的分层结构的功能模块和域。 在某些情况下，可能会关闭组件和模块，而在其他情况下，可能会打开组件和模块。

公开(公告)号：WO2007089802A3

公开(公告)日：2007-08-09

申请号：PCT/US2007/002577

申请日：2007-01-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. ,  ROBINETT, Warren ,  SNIDER, Gregory S, ,  STEWART, Duncan ,  STRAZNICKY, Joseph

Inventor： ROBINETT, Warren ,  SNIDER, Gregory S, ,  STEWART, Duncan ,  STRAZNICKY, Joseph

IPC: G11C8/10 ,  G11C13/02 ,  H03M7/02

Abstract: Various embodiments of the present invention are directed to demultiplexers that include tunneling resistor nanowire junctions, and to nanowire addressing methods for reliably addressing nanowire signal lines in nanoscale and mixed-scale demultiplexers. In one embodimentof the present invention, an encoder-demulriplexer comprises a number of input signal lines and an encoder (1304) that generates an n -bit-constant-weight-code code-word internal address (1320, 1506, 1704) for each different input address (1318, 1702) received on the input signal lines. The encoder-demultiplexer also includes n microscale signal lines (1306-1311) on which an n -bit-constant-weight-code code word internal address is out put by the encoder and a number of encoder-demultiplexer-addressed nanowire signal lines interconnected with the n microscale signal lines (1306-1311) via tunneling resistor junctions, the encoder-demultiplexer-addressed nanowire signal lines each associated with an n -bit-constant-weight-code code-word internal adress (1320, 1506, 1704).

公开(公告)号：WO2006115968A2

公开(公告)日：2006-11-02

申请号：PCT/US2006/014856

申请日：2006-04-19

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  WILLIAMS, R., Stanley ,  KUEKES, Phillip, J. ,  PERNER, Frederick, A. ,  SNIDER, Gregory, S. ,  STEWART, Duncan

Inventor： WILLIAMS, R., Stanley ,  KUEKES, Phillip, J. ,  PERNER, Frederick, A. ,  SNIDER, Gregory, S. ,  STEWART, Duncan

IPC: H01L21/66

CPC classification number: H05K7/1092 ,  H01L23/5228 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In various embodiments of the present invention, tunable resistors (1102) are introduced at the interconnect layer of the integrated circuits (102) in order to provide a means for adjusting internal voltage and/or current levels within the integrated circuit to repair defective components or to configure the integrated circuit following manufacture. For example, when certain internal components, such as transistors, do not have specified electronics characteristics due to manufacturing defects, adjustment of the variable resistances of the tunable resistors (1102) included in the interconnect layer of integrated circuits according to embodiments of the present invention can be used to adjust internal voltage and/or levels in order to ameliorate the defective components. In other cases, the tunable resistors may be used as switches to configure integrated circuit components, including individual transistors and logic gates as well as larger, hierarchically structured functional modules and domains. In some cases, components and modules may be turned off, while, in other cases, components and modules may be turned on.

Abstract translation: 在本发明的各种实施例中，可调谐电阻器（1102）被引入集成电路（102）的互连层，以便提供用于调整集成电路内的内部电压和/或电流水平以修复有缺陷的部件或 配置后续制造的集成电路。 例如，当诸如晶体管的某些内部部件由于制造缺陷而没有指定的电子特性时，根据本发明的实施例调整包括在集成电路的互连层中的可调电阻器（1102）的可变电阻 可以用于调整内部电压和/或电平，以改善有缺陷的部件。 在其他情况下，可调谐电阻器可以用作开关来配置集成电路组件，包括单独的晶体管和逻辑门以及更大的分层结构的功能模块和域。 在某些情况下，可能会关闭组件和模块，而在其他情况下，可能会打开组件和模块。

公开(公告)号：WO2005062079A8

公开(公告)日：2005-10-06

申请号：PCT/GB2004005452

申请日：2004-12-24

Applicant: INTENSE LTD ,  YANSON DAN ANDREYEVITCH ,  BACCHIN GIANLUCA ,  KOWALSKI OLEK PETER ,  MCDOUGALL STEWART DUNCAN

Inventor： YANSON DAN ANDREYEVITCH ,  BACCHIN GIANLUCA ,  KOWALSKI OLEK PETER ,  MCDOUGALL STEWART DUNCAN

IPC: H01L21/18 ,  H01S5/026

CPC classification number: H01L21/182

Abstract: A quantum well intermixing (QWI) technique for modifying an energy bandgap during the formation of optical semiconductor devices enables spatial control of the QWI process so as to achieve differing bandgap shifts across a wafer, device or substrate surface. The method includes: forming a substrate comprising one or more core layers defining at least one quantum well; depositing a succession of intermixing barrier layers over the quantum well, each successive intermixing barrier layer being formed of a semiconductor material and having a different etch characteristic than an immediately preceding barrier layer; etching away different numbers of the successive barrier layers in different regions of the substrate so as to provide different total thicknesses of barrier layer in different regions of the substrate; and applying an intermixing agent to the surface of the substrate such that the degree of intermixing in the quantum well region varies as a function of the total thickness of barrier layer, thereby forming different bandgaps in the quantum well in each of the respective regions.

Abstract translation: 用于在形成光学半导体器件期间修改能带隙的量子阱混合（QWI）技术能够对QWI工艺进行空间控制，以便实现晶片，器件或衬底表面上不同的带隙位移。 该方法包括：形成包括限定至少一个量子阱的一个或多个核心层的衬底; 在量子阱上沉积一系列混合阻挡层，每个连续的混合阻挡层由半导体材料形成并且具有与之前紧邻的阻挡层不同的蚀刻特性; 在衬底的不同区域中蚀刻掉不同数量的连续阻挡层，以便在衬底的不同区域中提供不同数量的阻挡层的总厚度; 以及将混合剂施加到衬底的表面，使得量子阱区域中的混合程度作为阻挡层的总厚度的函数而变化，由此在各个区域中的每一个中的量子阱中形成不同的带隙。