公开(公告)号：JP2010157316A

公开(公告)日：2010-07-15

申请号：JP2010000255

申请日：2010-01-04

Applicant: Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル.STMicroelectronics S.r.l.

Inventor： KAU DERCHANG ,  ATWOOD GREG ,  SPADINI GIANPAOLO

IPC: G11C13/00 ,  H01L27/10 ,  H01L27/105 ,  H01L45/00

CPC classification number: G11C8/14 ,  G11C13/0004 ,  G11C13/0028 ,  G11C13/003 ,  G11C2213/76

Abstract: PROBLEM TO BE SOLVED: To prevent the occurrence of a current spike flowing across the storage element of a memory cell having an OTS selector during the selection of the memory cell. SOLUTION: A memory device 100 includes a plurality of memory cells 110 being arranged in a matrix 105 having a plurality of rows and a plurality of columns. Each memory cell 110 includes the storage element P and a selector S for selecting the storage element P. The memory device 100 also includes a plurality of array lines having a plurality of row lines BL each one for selecting the memory cell P of a corresponding row and a plurality of column lines WL each one for selecting the memory cell P of a corresponding column. The memory device further includes for each line among the row lines BL and/or the column lines WL a respective set of local lines LWL each one for selecting a group of memory cells P of the corresponding line, and also a respective set of selection elements each one for selecting the corresponding local line LWL in response to the selection of the respective lines. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了防止在选择存储单元期间流过具有OTS选择器的存储单元的存储元件的电流尖峰的出现。 解决方案：存储器件100包括多个存储单元110，其布置在具有多行和多列的矩阵105中。 每个存储单元110包括存储元件P和用于选择存储元件P的选择器S.存储器件100还包括具有多条行线BL的多条阵列线，每条阵列线用于选择相应行的存储单元P 以及多个列线WL，每一列用于选择相应列的存储单元P. 存储装置还包括行行BL和/或列线WL中的每一行，各自的一组本地线LWL用于选择相应行的一组存储单元P，以及相应的选择元素组 每个用于响应于各行的选择来选择对应的本地行LWL。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010151808A

公开(公告)日：2010-07-08

申请号：JP2009268139

申请日：2009-11-25

Applicant: Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル.STMicroelectronics S.r.l.

Inventor： CORONATO LUCA ,  CAZZANIGA GABRIELE ,  ZERBINI SARAH

IPC: G01C19/56

CPC classification number: G01C19/56 ,  G01C19/5712 ,  Y10T29/49002

Abstract: PROBLEM TO BE SOLVED: To provide a biaxial or triaxial gyroscope satisfactory in sensitivity. SOLUTION: An integrated microelectromechanical structure 30 includes: a die 2, having a substrate 2a and a frame 2b, defining inside it a detection region 2c and having a first side extending along a first horizontal axis x; a driving mass 3, anchored to the substrate 2a, set in the detection region 2c, and rotatable in a plane xy with an actuation movement about a vertical axis z; and first and second pairs 16a', 16b' and 16c', 16d' of sensing masses, suspended inside the driving mass 3 via elastic supporting elements 20 so as to be fixed with respect thereto and so as to perform a detection movement of rotation out of the plane xy in response to a first angular velocity; wherein the sensing masses of the first pair 16a', 16b' and the sensing masses of the second pair 16c', 16d' are aligned in respective directions, having non-zero inclinations of opposite sign with respect to the first horizontal axis x. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供令人满意的灵敏度的双轴或三轴陀螺仪。 集成微电子机械结构30包括：具有基板2a和框架2b的模具2，在其内部限定有检测区域2c，并且具有沿第一水平轴线x延伸的第一侧面; 固定在基板2a上的驱动质量块3，其设置在检测区域2c中，并且可以在平面xy中以围绕垂直轴线z的致动运动旋转; 以及感测质量的第一和第二对16a'，16b'和16c'，16d'，经由弹性支撑元件20悬挂在驱动块3内部，以便相对于其固定，以便执行旋转检测 响应于第一角速度的平面xy; 其中第一对16a'，16b'的感测质量和第二对16c'，16d'的感测质量在相对于第一水平轴线x具有相反符号的非零倾斜的各个方向上对准。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2008217760A

公开(公告)日：2008-09-18

申请号：JP2007312878

申请日：2007-12-03

Applicant: Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル.STMicroelectronics S.r.l.

Inventor： ROSELLI GIUDITTA ,  TRONCONI MICHELE ,  PASOLINI FABIO

IPC: G06F3/038

CPC classification number: G01P15/125 ,  G01P13/00 ,  G01P15/0802 ,  G06F1/1613 ,  G06F1/1684 ,  G06F3/017 ,  G06F3/0383 ,  G06F13/24 ,  G06F2200/1636 ,  G06F2200/1637

Abstract: PROBLEM TO BE SOLVED: To avoid a fall of performance and degradation of agility in event identification.
SOLUTION: This sensor device is provided with a sensing mechanism for generating a first detection signal A
x , and a dedicated integrated circuit 6 connected to the sensing mechanism to detect a first event related to an electronic device according to the first detection signal A
x and generating a first interrupt signal when detecting the first event. The dedicated integrated circuit 6 detects the first event as a function of a temporal evolution of the first detection signal A
x , and in particular as a function of values assumed by the first detection signal A
x within one or more successive time windows T
S1 -T
S3 and of a relationship between these values.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：避免事件识别中的性能下降和敏捷性下降。

解决方案：该传感器装置设置有用于产生第一检测信号A x 的感测机构和连接到感测机构的专用集成电路6，以检测与电子 设备根据第一检测信号A x ，并且当检测到第一事件时产生第一中断信号。 专用集成电路6根据第一检测信号A x 的时间演变来检测第一事件，特别是根据第一检测信号A x 在一个或多个连续时间窗口T S1 S3 中的这些值之间的关系。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2008182191A

公开(公告)日：2008-08-07

申请号：JP2007285476

申请日：2007-11-01

Applicant: Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル.STMicroelectronics S.r.l.

Inventor： CASCIO ALESSANDRA ,  CURRO GIUSEPPE

IPC: H01L29/78 ,  H01L29/739

CPC classification number: H01L29/42368 ,  H01L29/0878 ,  H01L29/66712 ,  H01L29/7802

Abstract: PROBLEM TO BE SOLVED: To provide a MOS device resistant to ionizing radiation.
SOLUTION: A MOS device resistant to ionizing-radiation has a surface semiconductor layer 3 having a first type of conductivity, a gate structure 8 formed above the surface semiconductor layer 3 and constituted by a dielectric gate region 9 and a gate electrode region 11 located on the dielectric gate region 9, and a plurality of body regions 6 which is formed laterally and partially under the gate structure 8 within the surface semiconductor layer 3, and each of which has a second type of conductivity. In particular, the dielectric gate region 9 has a central region 9b having a first thickness, and a plurality of side regions 9a having a second thickness thinner than the first thickness. The central region 9b is located on an intercell region 10 of the surface semiconductor layer 3 arranged between the plurality of body regions 6.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供耐电离辐射的MOS器件。 解决方案：耐电离辐射的MOS器件具有具有第一类导电性的表面半导体层3，形成在表面半导体层3上方并由电介质栅极区9和栅电极区域构成的栅极结构8 11，以及形成在表面半导体层3内的栅极结构8的横向且部分地形成的多个体区6，并且各自具有第二导电性。 特别地，电介质栅极区9具有具有第一厚度的中心区域9b和具有比第一厚度薄的第二厚度的多个侧面区域9a。 中心区域9b位于布置在多个主体区域6之间的表面半导体层3的单元间区域10.版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2004357277A

公开(公告)日：2004-12-16

申请号：JP2004105994

申请日：2004-03-31

Applicant: Stmicroelectronics Sa ,  Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクスエス.アール.エル.STMicroelectronics S.r.l. ,  エスティマイクロエレクトロニクス・ソシエテ・アノニムSTMicroelectronics S.A.

Inventor： MESSINA GIUSEPPE ,  BATTIATO SEBASTIANO ,  CASTORINA ALFIO ,  PLAZA LAURENT

IPC: H04N9/64 ,  G06K9/00 ,  G06T5/40 ,  H04N1/407 ,  H04N1/46 ,  H04N1/60

CPC classification number: G06T5/007 ,  G06K9/00234 ,  G06T5/40 ,  H04N1/6027

Abstract: PROBLEM TO BE SOLVED: To provide an image processing method which overcomes a stationary restriction having an adverse effect upon conventional techniques.
SOLUTION: Firstly, the color information of an image relating to an examinee is extracted by an image extracting apparatus. A visually associated region is then detected. The gray scale of the extracted image is then normalized on the basis of the visually associated region to correct the exposure of the extracted image. A region corresponding to the skin of the photographed examinee is also identified, and the region is used as a visually concerned region in a step of exposure correction.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004342291A

公开(公告)日：2004-12-02

申请号：JP2004044208

申请日：2004-02-20

Applicant: Ovonyx Inc ,  Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル ,  オヴォニクス インコーポレイテッド

Inventor： KHOURI OSAMA ,  RESTA CLAUDIO

IPC: G11C13/00 ,  G11C11/00 ,  G11C11/56 ,  G11C16/02 ,  G11C16/28 ,  G11C16/30

CPC classification number: G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2213/79

Abstract: PROBLEM TO BE SOLVED: To simplify the discrimination between a set cell and a reset cell during reading by reducing the distribution width of the resistance of the phase transition cells after writing. SOLUTION: The technology offered herein is related to reduce the width of resistance distribution of the phase change cells. A phase change memory 20 is provided with an array 1 which is formed by a plurality of cells 2. Each cell has a chalcogenic material memory element 3, a selection element 4 which is serially connected to the memory element, a plurality of address lines 11 which are connected to the cell, a writing stage 24 and a reading stage 25 connected to the array. The writing stage 24 is formed by a generator 45 which supplies a preset current to the cell 2 selected to correct the resistive value of the memory element 3. Reading is executed by properly biasing the cell selected within a voltage and comparing the current internally flowing with respect to a reference value. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004264281A

公开(公告)日：2004-09-24

申请号：JP2003307627

申请日：2003-08-29

Applicant: Nokia Corp ,  Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクスエス.アール.エルSTMicroelectronics S.r.l. ,  ノキア コーポレイションNokia Corporation

Inventor： ZERBINI SARAH ,  MERASSI ANGELO ,  SPINOLA DURANTE GUIDO ,  DE MASI BIAGIO

IPC: B81B3/00 ,  G01P15/00 ,  G01P15/06 ,  G01P15/08 ,  G01P15/18 ,  H01H1/00 ,  H01H35/14 ,  H01L29/84

CPC classification number: G01P1/127 ,  G01P15/06 ,  G01P15/0802 ,  G01P15/0891 ,  G01P15/18 ,  G01P2015/0814 ,  H01H1/0036 ,  H01H35/146

Abstract: PROBLEM TO BE SOLVED: To provide an inertial sensor having failure threshold.
SOLUTION: The inertial sensor having failure threshold is provided with a first body 2 and a second body 18, which can move relatively with respect to one another and are constrained by a plurality of elastic elements, and at least one sample element 6, connected between the first body 2 and the second body 18 and shaped so as to be subjected to a stress, when the second body 18 goes outside of the relative resting position with respect to the first body 2. The sample element 6 has at least one weakened region 9, 10.
COPYRIGHT: (C)2004,JPO&NCIPI

Abstract translation: 要解决的问题：提供具有故障阈值的惯性传感器。 解决方案：具有故障阈值的惯性传感器设置有第一主体2和第二主体18，第一主体2和第二主体18可相对于彼此相对运动并且被多个弹性元件约束，并且至少一个样本元件6 连接在第一主体2和第二主体18之间并且当第二主体18相对于第一主体2移动到相对静止位置之外时被成形为受到应力。样本元件6至少具有 一个弱化区域9,10。（C）2004，JPO＆NCIPI

公开(公告)号：JP2003338197A

公开(公告)日：2003-11-28

申请号：JP2003142641

申请日：2003-05-20

Applicant: Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル

Inventor： MICHELONI RINO ,  LOSAVIO ALDO

IPC: G11C16/06 ,  G11C29/00 ,  G11C29/04 ,  G11C29/44

CPC classification number: G11C29/82 ,  G11C29/846

Abstract: PROBLEM TO BE SOLVED: To improve the lifetime and the manufacturing yield of a memory device by performing recognition and correction of defective parts in the inside of a device. SOLUTION: A memory device 20 has a memory block 1 consisting of a plurality of standard sectors 15 and a redundancy part 2, a control circuit 3 controlling programming and erasing of memory cell data, and an accuracy verifying circuit 7 for data stored in a memory cell. The correctness verifying circuit is operated by the control circuit and generates an incorrect data signal when detecting even only one non-functioning cell. The control circuit activates redundancy, operates a redundant part, and stores the redundant data in a redundant memory stage 5b in the presence of incorrect data. Various implementation methods of column redundancy, row redundancy, and sector redundancy in both operation of erasing and programming are provided. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：通过对设备内部的缺陷部件进行识别和校正来提高存储器件的寿命和制造成品率。 解决方案：存储器件20具有由多个标准扇区15和冗余部分2组成的存储器块1，控制存储单元数据的编程和擦除的控制电路3以及存储的数据的精度验证电路7 在记忆体中。 正确性验证电路由控制电路操作，并在检测到即使只有一个非功能单元时产生不正确的数据信号。 控制电路激活冗余，操作冗余部分，并且在存在不正确数据的情况下将冗余数据存储在冗余存储器级5b中。 提供了擦除和编程操作中的列冗余，行冗余和扇区冗余的各种实现方法。 版权所有（C）2004，JPO

公开(公告)号：JP2011250169A

公开(公告)日：2011-12-08

申请号：JP2010121680

申请日：2010-05-27

Applicant: Omron Corp ,  Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル.STMicroelectronics S.r.l. ,  オムロン株式会社

Inventor： KASAI TAKASHI ,  UCHIDA YUKI ,  HORIMOTO YASUHIRO ,  SEBASTIANO CONTI

IPC: H04R19/04

CPC classification number: H04R3/00 ,  H04R19/016

Abstract: PROBLEM TO BE SOLVED: To provide an acoustic sensor in which shock resistance is improved.SOLUTION: An acoustic sensor 11 comprises a vibration film 22 and a fixed film 23 formed on the upper surface of a semiconductor substrate and detects a sonic wave by changes in a capacitance between a vibration electrode 22a of the vibration film 22 and a fixed electrode 23a of the fixed film 23. The fixed film 23 has a plurality of sound hole parts 32 bored to allow the sonic wave to reach the vibration film 22 from outside, and the fixed electrode 23a is formed so that the boundary of an edge 40 does not cross the sound hole parts 32.

Abstract translation: 要解决的问题：提供一种提高抗冲击性的声学传感器。 解决方案：声学传感器11包括形成在半导体衬底的上表面上的振动膜22和固定膜23，并且通过振动膜22的振动电极22a和 固定膜23的固定电极23a具有多个孔洞部分32，它们使声波从外部到达振动膜22，固定电极23a形成为使得边缘的边界 40不穿过声孔部件32.版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011047921A

公开(公告)日：2011-03-10

申请号：JP2010126881

申请日：2010-06-02

Applicant: Stmicroelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル.STMicroelectronics S.r.l.

Inventor： PRANDI LUCIANO ,  CAMINADA CARLO

IPC: B81B3/00 ,  G01C19/56

CPC classification number: G01C19/56 ,  G01C19/5726 ,  G01C19/5762 ,  H03F3/70

Abstract: PROBLEM TO BE SOLVED: To provide a micro-electro-mechanical gyroscope, along with a method for controlling the micro-electro-mechanical gyroscope, suitable for a wide-range development which is precise and whose reliability is high.
SOLUTION: The MEMS gyroscope includes: a minute structure 2 having a fixed structure 6, a movable drive mass body 7 concerning the fixed structure 6 in accordance to a drive axis X, and a movable detection mass body 8 mechanically connected to the drive mass body 7 so as to be a motion state in accordance to the drive axis X and concerning the drive mass body 7 in accordance with a drive axis Y in response to rotation of the minute structure 2; and a drive device 3 for maintaining the drive mass body 7 at a drive frequency in a vibration state. The drive device 3 includes: a discrete time detection interface 20 for detecting the position of the drive mass body 7 concerning the drive axis X; and control means 21, 23, 24, 25 for controlling a drive frequency on the basis of the position of the drive mass body 7.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供微机电陀螺仪以及用于控制微机电陀螺仪的方法，适用于精确且可靠性高的广泛开发。 解决方案：MEMS陀螺仪包括：具有固定结构6的微小结构2，关于根据驱动轴线X的固定结构6的可移动驱动质量体7和机械地连接到驱动轴线X的可动检测质量体8 驱动质量体7，以响应于微小结构2的旋转，根据驱动轴线X和与驱动质量体7相关的驱动轴线Y的运动状态; 以及用于将驱动质量体7保持在振动状态的驱动频率的驱动装置3。 驱动装置3包括：离散时间检测接口20，用于检测驱动质量体7关于驱动轴线X的位置; 以及用于基于驱动质量体7的位置来控制驱动频率的控制装置21,23,24,25。版权所有（C）2011，JPO＆INPIT