公开(公告)号：WO2017171464A1

公开(公告)日：2017-10-05

申请号：PCT/KR2017/003546

申请日：2017-03-31

Applicant: SEOUL VIOSYS CO., LTD. ,  SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： SIMIN, Grigory ,  SHUR, Michael ,  DOBRINSKY, Alexander

IPC: H01L31/109 ,  H01L31/09

CPC classification number: G01N21/33

Abstract: An integrated ultraviolet analyzer is described. The integrated ultraviolet analyzer can include one or more ultraviolet analyzer cells, each of which includes one or more ultraviolet photodetectors and one or more solid state light sources, which are monolithically integrated. The solid state light source can be operated to emit ultraviolet light, at least some of which passes through an analyzer active gap and irradiates a light sensing surface of the ultraviolet photodetector. A medium to be evaluated can be present in the analyzer active gap and affect the ultraviolet light as it passes there through, thereby altering an effect of the ultraviolet light on a ultraviolet photodetector.

Abstract translation: 描述了一种集成的紫外线分析仪。 集成的紫外线分析仪可以包括一个或多个紫外线分析仪单元，每个紫外线分析仪单元包括一个或多个单片集成的紫外光电探测器和一个或多个固态光源。 可操作固态光源发射紫外光，其中至少一些紫外光穿过分析仪有源间隙并照射紫外光探测器的光传感表面。 待评估的介质可以存在于分析仪有源间隙中，并在紫外光通过时影响紫外光，从而改变紫外光对紫外光检测器的影响。

公开(公告)号：WO2017011474A1

公开(公告)日：2017-01-19

申请号：PCT/US2016/041932

申请日：2016-07-12

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： SHUR, Michael ,  DOBRINSKY, Alexander

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/22 ,  H01L33/04

CPC classification number: H01L33/06 ,  H01L27/153 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/022466 ,  H01L31/03044 ,  H01L31/035236 ,  H01L31/109 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  Y02E10/544

Abstract: A contact to a semiconductor heterostructure is described. In one embodiment, there is an n-type semiconductor contact layer. A light generating structure formed over the n-type semiconductor contact layer has a set of quantum wells and barriers configured to emit or absorb target radiation. An ultraviolet transparent semiconductor layer having a non-uniform thickness is formed over the light generating structure. A p-type contact semiconductor layer having a non-uniform thickness is formed over the ultraviolet transparent semiconductor layer.

Abstract translation: 描述了与半导体异质结构的接触。 在一个实施例中，存在n型半导体接触层。 形成在n型半导体接触层上的发光结构具有一组量子阱和​​被配置为发射或吸收目标辐射的势垒。 在发光结构上形成具有不均匀厚度的紫外线透明半导体层。 在紫外线透明半导体层上形成具有不均匀厚度的p型接触半导体层。

公开(公告)号：WO2016176285A1

公开(公告)日：2016-11-03

申请号：PCT/US2016/029489

申请日：2016-04-27

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： SHATALOV, Maxim, S. ,  SHUR, Michael ,  DOBRINSKY, Alexander

IPC: H01S5/14 ,  H01S5/04

CPC classification number: H01S5/3013 ,  H01S5/04 ,  H01S5/0607 ,  H01S5/2027 ,  H01S5/22 ,  H01S5/32341 ,  H01S2301/173

Abstract: A device is provided in which a light emitting semiconductor structure is excited by an electron beam that impacts a region of a lateral surface of the light emitting semiconductor structure at an angle to the normal of the lateral surface that is non-zero. The non-zero angle can be configured to cause excitation in a desired region of the light emitting semiconductor structure. The device can include wave guiding layer(s) and/or other features to improve the light generation and/or operation of the device.

Abstract translation: 提供了一种器件，其中发光半导体结构被电子束激发，电子束以与非非零的侧表面的法线成角度地撞击发光半导体结构的侧表面的区域。 非零角度可以被配置为在发光半导体结构的期望区域中引起激发。 该装置可以包括波导层和/或其他特征，以改善装置的光生成和/或操作。

公开(公告)号：WO2016109616A1

公开(公告)日：2016-07-07

申请号：PCT/US2015/067984

申请日：2015-12-30

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： SUN, Wenhong ,  DOBRINSKY, Alexander ,  SHATALOV, Maxim, S. ,  SHUR, Michael ,  GASKA, Remigijus

IPC: H01L33/30

CPC classification number: H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12

Abstract: A solution for fabricating a group III nitride heterostructure and/or a corresponding device is provided. The heterostructure can include a nucleation layer, which can be grown on a lattice mismatched substrate using a set of nucleation layer growth parameters. An aluminum nitride layer can be grown on the nucleation layer using a set of aluminum nitride layer growth parameters. The respective growth parameters can be configured to result in a target type and level of strain in the aluminum nitride layer that is conducive for growth of additional heterostructure layers resulting in strains and strain energies not exceeding threshold values which can cause relaxation and/or dislocation formation.

Abstract translation: 提供了用于制造III族氮化物异质结构和/或相应器件的解决方案。 异质结构可以包括成核层，其可以使用一组成核层生长参数在晶格失配的衬底上生长。 可以使用一套氮化铝层生长参数在成核层上生长氮化铝层。 可以将各自的生长参数配置为导致氮化铝层中的目标类型和应变水平，其有助于附加异质结构层的生长，导致应变和应变能不超过可引起松弛和/或位错形成的阈值 。

公开(公告)号：WO2016069701A1

公开(公告)日：2016-05-06

申请号：PCT/US2015/057730

申请日：2015-10-28

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： DOBRINSKY, Alexander ,  SHUR, Michael ,  GASKA, Remigijus

IPC: A61L2/10

CPC classification number: A61L2/10 ,  A61B5/0071 ,  A61F13/0246 ,  A61L2202/14 ,  A61N5/0624 ,  A61N2005/0645 ,  A61N2005/0651 ,  A61N2005/0654 ,  A61N2005/0661 ,  A61N2005/0666 ,  G01N21/4738 ,  G01N21/6486 ,  G01N2201/0221 ,  G01N2201/062 ,  G01N2201/0621

Abstract: A device including a flexible substrate and an ultraviolet radiation system is disclosed. The ultraviolet radiation system can include at least one ultraviolet radiation source configured to emit ultraviolet radiation towards a surface to be disinfected, an ultraviolet transparent component configured to focus the ultraviolet radiation, and a control system configured to control the at least one ultraviolet radiation source. The device can include a hand article, such as a glove.

Abstract translation: 公开了一种包括柔性基板和紫外线辐射系统的装置。 紫外线辐射系统可以包括配置成朝向待消毒的表面发射紫外线辐射的至少一个紫外线辐射源，配置成聚焦紫外线辐射的紫外线透明部件，以及被配置为控制至少一个紫外线辐射源的控制系统。 该装置可以包括手制品，例如手套。

公开(公告)号：WO2016054150A1

公开(公告)日：2016-04-07

申请号：PCT/US2015/053120

申请日：2015-09-30

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： DOBRINSKY, Alexander ,  SHUR, Michael ,  GASKA, Remigijus

IPC: B65D51/24 ,  B65D81/28 ,  A61L2/10

CPC classification number: A23L3/28 ,  B65D81/24

Abstract: A solution for treating a surface with ultraviolet radiation is provided. A movable ultraviolet source is utilized to emit a beam of ultraviolet radiation having a characteristic cross-sectional area smaller than an area of the surface to be treated. The movable ultraviolet source can be moved as necessary to directly irradiate any portion of the surface with radiation within the characteristic cross-sectional area of the beam of ultraviolet radiation. The movement can include, for example, rotational movement and/or repositioning the movable ultraviolet source with respect to the surface.

Abstract translation: 提供了一种用紫外线辐射处理表面的方法。 利用可移动的紫外线源发射具有小于待处理表面的面积的特征横截面积的紫外线辐射束。 可移动的紫外线源可以根据需要移动，以在紫外线辐射束的特征横截面积内的辐射直接照射表面的任何部分。 该运动可以包括例如相对于表面旋转移动和/或重新定位可移动的紫外光源。

公开(公告)号：WO2015034865A1

公开(公告)日：2015-03-12

申请号：PCT/US2014/053791

申请日：2014-09-03

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： JAIN, Rakesh ,  SHATALOV, Maxim, S. ,  YANG, Jinwei ,  DOBRINSKY, Alexander ,  SHUR, Michael ,  GASKA, Remigijus

IPC: H01L33/06

CPC classification number: H01L31/035272 ,  H01L33/04 ,  H01L33/32

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

Abstract translation: 提供了一种用于光电子器件的改进的异质结构。 异质结构包括有源区，电子阻挡层和p型接触层。 p型接触层和电子阻挡层可以掺杂有p型掺杂剂。 电子阻挡层的掺杂剂浓度可以是p型接触层的掺杂剂浓度的至多10％。 还描述了设计这种异质结构的方法。

公开(公告)号：WO2013138575A1

公开(公告)日：2013-09-19

申请号：PCT/US2013/031267

申请日：2013-03-14

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC

Inventor： GASKA, Remigijus ,  SHATALOV, Maxim, S. ,  SHUR, Michael ,  DOBRINSKY, Alexander

IPC: H01L33/04 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.

Abstract translation: 提供一种发光二极管，其包括n型接触层和与n型接触层相邻的发光结构。 光产生结构包括一组量子阱。 接触层和发光结构可以被配置成使得n型接触层的能量与量子阱的电子基态能量之间的差大于光的材料中的极性光学声子的能量 生成结构。 另外，发光结构可以被配置为使得其宽度与用于通过注入到光产生结构中的电子发射极性光学声子的平均自由程相当。

公开(公告)号：WO2013138573A1

公开(公告)日：2013-09-19

申请号：PCT/US2013/031263

申请日：2013-03-14

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： SHATALOV, Maxim, S ,  GASKA, Remigijus ,  YANG, Jinwei ,  SHUR, Michael ,  DOBRINSKY, Alexander

IPC: H01L21/20 ,  H01L33/14

CPC classification number: H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02573 ,  H01L33/06 ,  H01L33/32

Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).

Abstract translation: 提供了一种用于设计和/或制造包括量子阱和相邻屏障的结构的解决方案。 选择量子阱和相邻屏障之间的目标频带不连续性以与量子阱和/或屏障的掺杂剂的活化能一致。 例如，可以选择目标价带不连续性，使得相邻势垒中的掺杂剂的掺杂剂能级与量子阱的价态能带边缘和/或价态能带中的自由载流子的基态能量一致 量子阱。 另外，可以选择量子阱和/或相邻势垒的目标掺杂水平以促进穿过势垒的空穴的实际空间传递。 可以形成量子阱和相邻势垒，使得实际的带不连续性和/或实际掺杂水平对应于相关目标。

公开(公告)号：WO2012174311A3

公开(公告)日：2013-06-06

申请号：PCT/US2012042555

申请日：2012-06-15

Applicant: SENSOR ELECTRONIC TECHNOLOGY INC ,  SHATALOV MAXIM S ,  DOBRINSKY ALEXANDER ,  SHUR MICHAEL ,  GASKA REMIGIJUS

Inventor： SHATALOV MAXIM S ,  DOBRINSKY ALEXANDER ,  SHUR MICHAEL ,  GASKA REMIGIJUS

IPC: H01L33/22

CPC classification number: H01L33/60 ,  F21V5/002 ,  H01L33/0045 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L2933/0083 ,  Y10T29/49

Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.

Abstract translation: 提供了用于改善辐射通过界面传播的成型表面。 成形表面包括一组大的粗糙度部件，其提供成型表面的第一变化，其特征刻度大约比辐射的目标波长大一个数量级。 成形表面还包括叠加在该组粗糙度较大的部件上的一组小的粗糙度部件，并且提供具有辐射目标波长级的特征标度的成型表面的第二变型。