DISPLAY APPARATUS
    23.
    发明申请
    DISPLAY APPARATUS 有权
    显示设备

    公开(公告)号:US20110013346A1

    公开(公告)日:2011-01-20

    申请号:US12636941

    申请日:2009-12-14

    CPC classification number: H04N5/65 G02F1/133512 G02F2001/133331 G06F1/1601

    Abstract: The present invention relates to a display apparatus. The display apparatus includes a display module; and a front panel disposed at a front of the display module, wherein a distance between the display module and the front panel is 3 mm or less and the front panel is formed in a shape protruded in an opposite direction of the display module.

    Abstract translation: 本发明涉及一种显示装置。 显示装置包括显示模块; 以及设置在所述显示模块的前方的前面板,其中,所述显示模块与所述前面板之间的距离为3mm以下,所述前面板形成为与所述显示模块相反的方向突出的形状。

    Battery module
    24.
    发明授权
    Battery module 有权
    电池模块

    公开(公告)号:US07862924B2

    公开(公告)日:2011-01-04

    申请号:US11412577

    申请日:2006-04-26

    Abstract: A battery module includes unit batteries spaced apart from each other and a barrier arranged between neighboring ones of the unit batteries. The barrier includes protrusions formed on a front surface, a rear surface, or both of the barrier to form an airflow portion; and strength reinforcing portions formed on the barrier, each extending in a direction and having a channel.

    Abstract translation: 电池模块包括彼此间隔开的单元电池和布置在相邻单元电池之间的屏障。 屏障包括形成在前表面,后表面或两个屏障上的凸起以形成气流部分; 以及形成在所述阻挡物上的强度增强部,各自沿着方向延伸并具有通道。

    Analyzing system of network traffic according to variable communication's mass and analyzing method thereof
    25.
    发明授权
    Analyzing system of network traffic according to variable communication's mass and analyzing method thereof 有权
    根据可变通信质量及其分析方法分析网络流量系统

    公开(公告)号:US07835296B2

    公开(公告)日:2010-11-16

    申请号:US11721342

    申请日:2006-12-14

    CPC classification number: H04L43/00

    Abstract: An analyzing system for measuring and analyzing communication traffic of a network and an analyzing method using the analyzing system are provided. The system includes a data measurement module configured to capture data that influences a change in communication traffic in a network; a measured data functionizing module configured to obtain a probability density or a cumulative distribution; a distribution function database configured to store function information on theoretically generalized distribution; a parameter decision module configured to apply the data to the function information and to decide parameters; and a suitability check module configured to select information similar to the probability density or the cumulative distribution from among the function information.

    Abstract translation: 提供了一种用于测量和分析网络通信流量的分析系统和使用该分析系统的分析方法。 该系统包括被配置为捕获影响网络中的通信业务的变化的数据的数据测量模块; 被配置为获得概率密度或累积分布的测量数据功能化模块; 分配函数数据库,被配置为存储理论上广义分布的函数信息; 参数决定模块,被配置为将所述数据应用于所述功能信息并确定参数; 以及适合性检查模块,被配置为从所述功能信息中选择与所述概率密度或累积分布类似的信息。

    Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions
    26.
    发明授权
    Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions 有权
    制造具有对应于一对鳍型沟道区的单个栅电极的半导体器件的方法

    公开(公告)号:US07807517B2

    公开(公告)日:2010-10-05

    申请号:US12219737

    申请日:2008-07-28

    Abstract: Provided are methods for fabricating semiconductor devices incorporating a fin-FET structure that provides body-bias control, exhibits some characteristic advantages associated with SOI structures, provides increased operating current and/or reduced contact resistance. The methods for fabricating semiconductor devices include forming insulating spacers on the sidewalls of a protruding portion of a first insulation film; forming a second trench by removing exposed regions of the semiconductor substrate using the insulating spacers as an etch mask, and thus forming fins in contact with and supported by the first insulation film. After forming the fins, a third insulation film is formed to fill the second trench and support the fins. A portion of the first insulation film is then removed to open a space between the fins in which additional structures including gate dielectrics, gate electrodes and additional contact, insulating and storage node structures may be formed.

    Abstract translation: 提供了制造具有提供体偏置控制的鳍式FET结构的半导体器件的方法,显示出与SOI结构相关的一些特征优点,提供增加的工作电流和/或降低的接触电阻。 制造半导体器件的方法包括在第一绝缘膜的突出部分的侧壁上形成绝缘间隔物; 通过使用绝缘间隔物作为蚀刻掩模去除半导体衬底的暴露区域,从而形成与第一绝缘膜接触并由第一绝缘膜支撑的鳍形成第二沟槽。 在形成翅片之后,形成第三绝缘膜以填充第二沟槽并支撑翅片。 然后去除第一绝缘膜的一部分以打开翅片之间的空间,其中可以形成包括栅极电介质,栅电极和附加接触,绝缘和存储节点结构的附加结构。

    Information system for metabolic flux analysis using extensible markup language and operating method thereof
    28.
    发明授权
    Information system for metabolic flux analysis using extensible markup language and operating method thereof 失效
    使用可扩展标记语言进行代谢通量分析的信息系统及其操作方法

    公开(公告)号:US07752540B2

    公开(公告)日:2010-07-06

    申请号:US11148907

    申请日:2005-06-09

    CPC classification number: G06F19/26 G06F19/12

    Abstract: The present invention relates to an MFA (Metabolic Flux Analysis) information system using an XML (eXtensible Markup Language) and an operating method thereof. More specifically, the invention relates to an MFA information system and an operating method thereof, which generates, edits, stores and visualizes an MFA model feature and an MFA object using XML, and edits, stores and visualizes the result obtained by performing MFA based on the object. The present invention provides the MFA information system and method capable of generating, editing, storing and visualizing MFA model features and MFA objects using XML. Accordingly, MFA can be easily performed by utilizing advantages of XML, such as transplantation, reusability, deciphering, scalability, flexibility and effective data exchange, and thus the present invention can be applied to cell improvement using metabolic engineering.

    Abstract translation: 本发明涉及使用XML(可扩展标记语言)的MFA(代谢通量分析)信息系统及其操作方法。 更具体地,本发明涉及一种MFA信息系统及其操作方法,其使用XML生成,编辑,存储和可视化MFA模型特征和MFA对象,并且通过执行MFA获得的结果进行编辑,存储和可视化 物体。 本发明提供了能够使用XML来生成,编辑,存储和可视化MFA模型特征和MFA对象的MFA信息系统和方法。 因此,通过利用移植,可重用性,解密,可扩展性,灵活性和有效的数据交换等XML的优点,可以容易地实现MFA,因此本发明可以应用于使用代谢工程的细胞改良。

    Secondary battery module
    29.
    发明授权
    Secondary battery module 有权
    二次电池模块

    公开(公告)号:US07746033B2

    公开(公告)日:2010-06-29

    申请号:US11259824

    申请日:2005-10-26

    Abstract: A secondary battery module includes a unit battery aggregate having a plurality of unit batteries arranged spaced from each other; a housing adapted to receive the unit battery aggregate; and a communicating member installed inside the housing, the communicating member adapted to supply a cooling medium flowing into the housing between a plurality of the unit batteries. The housing includes an inlet for flowing temperature control air into the unit battery aggregate, an outlet for flowing out the air passing through the unit battery, and a communicating member arranged perpendicular to the direction of inflow and outflow of the air with respect to the inlet and the outlet to communicate with a flowing channel between unit batteries, respectively.

    Abstract translation: 二次电池模块包括具有彼此间隔布置的多个单元电池的单元电池集合体; 适于接收所述单元电池组的壳体; 以及安装在所述壳体内的连通构件,所述连通构件适于在多个所述单元电池之间提供流入所述壳体的冷却介质。 壳体包括用于将温度控制空气流入单元电池集合体的入口,用于流出通过单元电池的空气的出口,以及垂直于空气相对于入口的流入和流出方向布置的连通构件 和出口分别与单元电池之间的流动通道进行通信。

    Non-volatile memory cells including fin structures
    30.
    发明授权
    Non-volatile memory cells including fin structures 失效
    包括鳍结构的非易失性存储单元

    公开(公告)号:US07737485B2

    公开(公告)日:2010-06-15

    申请号:US12193200

    申请日:2008-08-18

    Abstract: A method of forming a non-volatile memory device may include forming a fin protruding from a substrate, forming a tunnel insulating layer on portions of the fin, and forming a floating gate on the tunnel insulting layer so that the tunnel insulating layer is between the floating gate and the fin. A dielectric layer may be formed on the floating gate so that the floating gate is between the dielectric layer and the fin, and a control gate electrode may be formed on the dielectric layer so that the dielectric layer is between the control gate and the fin. Related devices are also discussed.

    Abstract translation: 形成非易失性存储器件的方法可以包括形成从衬底突出的翅片,在鳍的部分上形成隧道绝缘层,并且在隧道绝缘层上形成浮栅,使得隧道绝缘层在 浮动门和鳍。 可以在浮置栅极上形成电介质层,使得浮置栅极位于电介质层和鳍之间,并且可以在电介质层上形成控制栅电极,使得电介质层位于控制栅和鳍之间。 还讨论了相关设备。

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