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公开(公告)号：KR1020010056346A
公开(公告)日：2001-07-04
申请号：KR1019990057778
申请日：1999-12-15
IPC: H01L21/304
Abstract: PURPOSE: An apparatus and a method for cleaning a semiconductor substrate are provided to simplify liquid waste treatment, to reduce the amount of a chemical solution used, and to permit an efficient cleaning at room temperature or at low temperature, by using an ammonia solution including ozone as a cleaning solution. CONSTITUTION: Ammonia, pure water and ozone are supplied to a mixing tank(2) from an ammonia tank(4), a pure water tank and an ozone generator(5), and then mixed to form the cleaning solution. Preferably, ammonia and pure water are mixed to a volume ratio of 0.001-0.01:5. The cleaning solution is supplied to a cleaning bath(1) through the first filter(12) for removing ozone bubbles. Next, a megasonic transducer(3-1) applies a megasonic force to the cleaning solution in the bath(1). Next, the semiconductor substrate is immersed in the bath(1), and then impurities on a substrate surface are removed at room temperature. Alternatively, the cleaning method may be performed at low temperature by circulating the cleaning solution in the bath(1) through a circulation line(b) and a chiller(9).
Abstract translation: 目的：提供一种用于清洁半导体衬底的设备和方法，以简化废液处理，减少所用化学溶液的量，并且可以在室温或低温下进行有效的清洗，通过使用包括 臭氧作为清洗液。 构成：将氨，纯水和臭氧从氨槽（4），纯水罐和臭氧发生器（5）供给到混合罐（2）中，然后混合以形成清洁溶液。 优选将氨和纯水混合至体积比为0.001-0.01:5。 清洁溶液通过第一过滤器（12）供应到清洗浴（1），用于除去臭氧气泡。 接下来，兆声波换能器（3-1）对浴液（1）中的清洁溶液施加兆声力。 接下来，将半导体衬底浸入浴（1）中，然后在室温下除去衬底表面上的杂质。 或者，清洗方法可以通过循环管线（b）和冷却器（9）将洗涤液（1）中的清洗溶液循环通过低温进行。
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