公开(公告)号：KR1020050014980A

公开(公告)日：2005-02-21

申请号：KR1020030053417

申请日：2003-08-01

Applicant: 삼성전자주식회사

Inventor： 변재성 ,  임현수 ,  이인성

IPC: G02F1/136

Abstract: PURPOSE: A thin film transistor substrate is provided to prevent poor contact due to corrosion of aluminum by removing an aluminum film disposed between a shorting bar and a signal line. CONSTITUTION: A thin film transistor substrate includes a display area(A) and a periphery area(B). The display area includes a plurality of gate lines(G1,G2,Gn-1,Gn), a plurality of data lines(D1,D2,Dm-1,Dm), a plurality of thin film transistors(TFT) respectively connected to the gate lines and data lines, and a plurality of pixel electrodes respectively connected to the thin film transistors. The peripheral area is located outside the display area and includes connecting parts(129,179) extended from the gate lines and data lines. The gate lines or data lines are composed of multiple layers including an aluminum film. The aluminum film is removed in the connecting part. The thin film transistor substrate further includes shorting bars(40,41) connected to the connecting parts.

Abstract translation: 目的：提供薄膜晶体管基板，以通过去除设置在短路棒和信号线之间的铝膜来防止由于铝的腐蚀而导致的接触不良。 构成：薄膜晶体管基板包括显示区域（A）和外围区域（B）。 显示区域包括分别连接到多个栅极线（G1，G2，Gn-1，Gn），多个数据线（D1，D2，Dm-1，Dm），多个薄膜晶体管 栅极线和数据线，以及分别连接到薄膜晶体管的多个像素电极。 外围区域位于显示区域的外部，并且包括从栅极线和数据线延伸的连接部分（129,179）。 栅极线或数据线由包括铝膜的多个层组成。 在连接部分中除去铝膜。 薄膜晶体管基板还包括连接到连接部分的短路棒（40,41）。